IT964961B - Procedimento per il deposito epitas siale di composti ternari del tipo iii v dalla fase liquida - Google Patents
Procedimento per il deposito epitas siale di composti ternari del tipo iii v dalla fase liquidaInfo
- Publication number
- IT964961B IT964961B IT69678/72A IT6967872A IT964961B IT 964961 B IT964961 B IT 964961B IT 69678/72 A IT69678/72 A IT 69678/72A IT 6967872 A IT6967872 A IT 6967872A IT 964961 B IT964961 B IT 964961B
- Authority
- IT
- Italy
- Prior art keywords
- epitas
- siale
- deposit
- procedure
- liquid phase
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2907—Materials being Group IIIA-VA materials
- H10P14/2911—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7130542A FR2151171A5 (en) | 1971-08-23 | 1971-08-23 | Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT964961B true IT964961B (it) | 1974-01-31 |
Family
ID=9082124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT69678/72A IT964961B (it) | 1971-08-23 | 1972-08-19 | Procedimento per il deposito epitas siale di composti ternari del tipo iii v dalla fase liquida |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS4830691A (enExample) |
| AU (1) | AU4566672A (enExample) |
| DE (1) | DE2238664A1 (enExample) |
| FR (1) | FR2151171A5 (enExample) |
| IT (1) | IT964961B (enExample) |
| NL (1) | NL7211381A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2251369B1 (enExample) * | 1973-11-15 | 1978-02-10 | Radiotechnique Compelec | |
| JPS5716487B2 (enExample) * | 1974-07-01 | 1982-04-05 | ||
| JPS524782A (en) * | 1975-06-30 | 1977-01-14 | Matsushita Electric Ind Co Ltd | Liquid phase epitaxial growth method |
| JPS52135653A (en) * | 1976-05-10 | 1977-11-12 | Hitachi Ltd | Differential amplifier |
| JPS55175239U (enExample) * | 1979-06-04 | 1980-12-16 | ||
| FR2519032A1 (fr) * | 1981-12-28 | 1983-07-01 | Benchimol Jean Louis | Procede de depot par epitaxie en phase liquide d'un compose ternaire |
| JP3199110B2 (ja) | 1997-12-05 | 2001-08-13 | 松下電器産業株式会社 | 蛍光ランプ |
-
1971
- 1971-08-23 FR FR7130542A patent/FR2151171A5/fr not_active Expired
-
1972
- 1972-08-05 DE DE2238664A patent/DE2238664A1/de active Pending
- 1972-08-17 AU AU45666/72A patent/AU4566672A/en not_active Expired
- 1972-08-18 NL NL7211381A patent/NL7211381A/xx unknown
- 1972-08-19 IT IT69678/72A patent/IT964961B/it active
- 1972-08-21 JP JP47082879A patent/JPS4830691A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4830691A (enExample) | 1973-04-23 |
| NL7211381A (enExample) | 1973-02-27 |
| AU4566672A (en) | 1974-02-21 |
| FR2151171A5 (en) | 1973-04-13 |
| DE2238664A1 (de) | 1973-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AT337141B (de) | Reaktionskristallisator | |
| SE418965B (sv) | Forfarande for utvinning av flytande cyanurklorid | |
| IT1017574B (it) | Impianto per l erogazione di carburanti liquidi | |
| HK582A (en) | Liquid crystal compositions | |
| IT1020606B (it) | Procedimento per il ricupero di saccarosio | |
| IL40035A0 (en) | Asymmetric synthesis of alkyl chrysanthemates | |
| IT1022774B (it) | Apparecchiatura per la commutazione di segnali | |
| SE420523B (sv) | Anleggning for transport av vetska | |
| SE384134B (sv) | Forfarande vid framstellning av indometacin innehallande suppositorier | |
| IT973097B (it) | Procedimento per la preparazione di composti eterociclici | |
| BE813213A (fr) | Melanges cristallins liquides | |
| IT964961B (it) | Procedimento per il deposito epitas siale di composti ternari del tipo iii v dalla fase liquida | |
| IT1026690B (it) | Circuito per il raddrizzamento di segnali | |
| BE781539A (fr) | Composes cristallins liquides | |
| ATA770174A (de) | Flussigkeitsgekuhlte kokille | |
| IT1002986B (it) | Chiusura per serbatoi di liquidi | |
| NL7415610A (nl) | Vloeibaarkristallijne verbindingen. | |
| DK140596B (da) | Analogifremgangsmåde til fremstilling af 8beta-(ureidomethyl)-ergolenderivater. | |
| IT1014696B (it) | Procedimento per la trasformazione diretta dalla fase alfa alla fase x di ftalocianina non contenente metalli | |
| IT1020392B (it) | Circuito per l eliminazione di impulsi | |
| NL7412358A (nl) | Werkwijze ter bereiding van s-triazineringen bevattende polycarbonaten met functionele groepen. | |
| IT1004121B (it) | Procedimento per produrre composti del tipo aiiibv specialmente fosfuro di gallio | |
| NO741844L (no) | Analogifremgangsmåte til fremstilling av beta-adrenergisk blokkerende aminopropanoler. | |
| IT955378B (it) | Procedimento per la produzione di sacchi con fondo ripiegato | |
| BE811774A (fr) | Isonitriles cristallins liquides |