DE2238664A1 - Verfahren zum epitaktischen niederschlagen ternaerer iii-v-verbindungen aus der fluessigkeitsphase - Google Patents

Verfahren zum epitaktischen niederschlagen ternaerer iii-v-verbindungen aus der fluessigkeitsphase

Info

Publication number
DE2238664A1
DE2238664A1 DE2238664A DE2238664A DE2238664A1 DE 2238664 A1 DE2238664 A1 DE 2238664A1 DE 2238664 A DE2238664 A DE 2238664A DE 2238664 A DE2238664 A DE 2238664A DE 2238664 A1 DE2238664 A1 DE 2238664A1
Authority
DE
Germany
Prior art keywords
solution
substrate
epitaxial
aluminum
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2238664A
Other languages
German (de)
English (en)
Inventor
Jean-Marc Le Duc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2238664A1 publication Critical patent/DE2238664A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE2238664A 1971-08-23 1972-08-05 Verfahren zum epitaktischen niederschlagen ternaerer iii-v-verbindungen aus der fluessigkeitsphase Pending DE2238664A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7130542A FR2151171A5 (en) 1971-08-23 1971-08-23 Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium

Publications (1)

Publication Number Publication Date
DE2238664A1 true DE2238664A1 (de) 1973-03-15

Family

ID=9082124

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2238664A Pending DE2238664A1 (de) 1971-08-23 1972-08-05 Verfahren zum epitaktischen niederschlagen ternaerer iii-v-verbindungen aus der fluessigkeitsphase

Country Status (6)

Country Link
JP (1) JPS4830691A (enExample)
AU (1) AU4566672A (enExample)
DE (1) DE2238664A1 (enExample)
FR (1) FR2151171A5 (enExample)
IT (1) IT964961B (enExample)
NL (1) NL7211381A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2452197A1 (de) * 1973-11-15 1975-05-22 Philips Nv Verbesserung eines verfahrens zum epitaktischen anwachsen aus der fluessigkeitsphase

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5716487B2 (enExample) * 1974-07-01 1982-04-05
JPS524782A (en) * 1975-06-30 1977-01-14 Matsushita Electric Ind Co Ltd Liquid phase epitaxial growth method
JPS52135653A (en) * 1976-05-10 1977-11-12 Hitachi Ltd Differential amplifier
JPS55175239U (enExample) * 1979-06-04 1980-12-16
FR2519032A1 (fr) * 1981-12-28 1983-07-01 Benchimol Jean Louis Procede de depot par epitaxie en phase liquide d'un compose ternaire
JP3199110B2 (ja) 1997-12-05 2001-08-13 松下電器産業株式会社 蛍光ランプ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2452197A1 (de) * 1973-11-15 1975-05-22 Philips Nv Verbesserung eines verfahrens zum epitaktischen anwachsen aus der fluessigkeitsphase

Also Published As

Publication number Publication date
JPS4830691A (enExample) 1973-04-23
IT964961B (it) 1974-01-31
NL7211381A (enExample) 1973-02-27
AU4566672A (en) 1974-02-21
FR2151171A5 (en) 1973-04-13

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