FR2119175A5 - Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd - Google Patents
Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpdInfo
- Publication number
- FR2119175A5 FR2119175A5 FR7046399A FR7046399A FR2119175A5 FR 2119175 A5 FR2119175 A5 FR 2119175A5 FR 7046399 A FR7046399 A FR 7046399A FR 7046399 A FR7046399 A FR 7046399A FR 2119175 A5 FR2119175 A5 FR 2119175A5
- Authority
- FR
- France
- Prior art keywords
- cpd
- substrate
- ternary
- semiconductor body
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
Abstract
Prodn. of a semiconductor body suitable for use in electroluminescent devices, comprising an AIII BV substrate (pref. GaAs) and an active layer consisting of a ternary cpd. contg. two elements of gp. III and one element of gp. V (pref. (Ga, Al) As contg. 0.3-0.8 wt.% Al), in which the ratio of the gp. III element having the smaller atomic radius to the gp. III element having the larger atomic radius, is at a min. near the AIII BV substrate and increases to a max. at the opposite surface, is improved by first epitaxially growing the ternary cpd. layer from a liquid phase onto a temporary monocrystalline substrate, then forming the permanent AIII BV substrate on the layer of the ternary cpd. and finally removing (at least partly) the temporary substrate, by this method, the first epitaxially formed surfaces becomes accessible; mechanicall strong structure is obtained.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7046399A FR2119175A5 (en) | 1970-12-23 | 1970-12-23 | Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd |
NL7117428A NL7117428A (en) | 1970-12-23 | 1971-12-18 | |
DE2163075A DE2163075C2 (en) | 1970-12-23 | 1971-12-18 | Process for the production of electroluminescent semiconductor components |
JP46102789A JPS5029787B1 (en) | 1970-12-23 | 1971-12-20 | |
GB5900771A GB1370430A (en) | 1970-12-23 | 1971-12-20 | Methods of manufacturing semi-conductor bodies |
CA130494A CA930075A (en) | 1970-12-23 | 1971-12-20 | Method of manufacturing a semiconductor body |
US00209763A US3823043A (en) | 1970-12-23 | 1971-12-20 | Method of manufacturing semiconductor body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7046399A FR2119175A5 (en) | 1970-12-23 | 1970-12-23 | Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2119175A5 true FR2119175A5 (en) | 1972-08-04 |
Family
ID=9066248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7046399A Expired FR2119175A5 (en) | 1970-12-23 | 1970-12-23 | Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2119175A5 (en) |
-
1970
- 1970-12-23 FR FR7046399A patent/FR2119175A5/en not_active Expired
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IE34306B1 (en) | Improvements in method for forming epitaxial crystals or wafers in selected regions of substrates | |
GB1435590A (en) | Process for the fabrication of a semiconductor structure | |
GB1168536A (en) | Improvements in and relating to the Preparation of Semiconductor Materials | |
GB1239044A (en) | ||
GB1501483A (en) | Semiconductor device | |
FR2119176A5 (en) | Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd | |
FR2119175A5 (en) | Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd | |
GB1332775A (en) | Method of forming region of a desired conductivity type in the surface of a semiconductor body | |
FR2246067A1 (en) | Deposition of hetero-epitaxial layers from liq. phase - rough surface on substrate bridges difference in lattice spacings | |
GB1439822A (en) | Gallium arsenide photocathodes | |
JPS54152878A (en) | Structure of semiconductor laser element and its manufacture | |
GB1165016A (en) | Processing Semiconductor Bodies to Form Surface Protuberances Thereon. | |
FR2151171A5 (en) | Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium | |
GB1370430A (en) | Methods of manufacturing semi-conductor bodies | |
GB1279588A (en) | Improvements in or relating to the production of insulated semi-conductor regions in a composite body | |
GB1365465A (en) | Semiconductor device manufacture | |
GB1467145A (en) | Method of forming a wafer of semiconductor material and the wafer so formed | |
JPS5724591A (en) | Manufacture of semiconductor laser device | |
GB1165187A (en) | Semiconductor Structure Employing a High Resistivity Gallium Arsenide Substrate | |
GB1451085A (en) | Contacting semiconductors devices | |
GB1362512A (en) | Semiconductor device and method for manufacture | |
JPS52127188A (en) | Semiconductor device | |
JPS56130913A (en) | Manufacture of semiconductor device | |
JPS51117882A (en) | Semiconductor device manufacturing method | |
JPS56105625A (en) | Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name |