FR2119175A5 - Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd - Google Patents

Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd

Info

Publication number
FR2119175A5
FR2119175A5 FR7046399A FR7046399A FR2119175A5 FR 2119175 A5 FR2119175 A5 FR 2119175A5 FR 7046399 A FR7046399 A FR 7046399A FR 7046399 A FR7046399 A FR 7046399A FR 2119175 A5 FR2119175 A5 FR 2119175A5
Authority
FR
France
Prior art keywords
cpd
substrate
ternary
semiconductor body
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7046399A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7046399A priority Critical patent/FR2119175A5/en
Priority to NL7117428A priority patent/NL7117428A/xx
Priority to DE2163075A priority patent/DE2163075C2/en
Priority to JP46102789A priority patent/JPS5029787B1/ja
Priority to GB5900771A priority patent/GB1370430A/en
Priority to CA130494A priority patent/CA930075A/en
Priority to US00209763A priority patent/US3823043A/en
Application granted granted Critical
Publication of FR2119175A5 publication Critical patent/FR2119175A5/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Abstract

Prodn. of a semiconductor body suitable for use in electroluminescent devices, comprising an AIII BV substrate (pref. GaAs) and an active layer consisting of a ternary cpd. contg. two elements of gp. III and one element of gp. V (pref. (Ga, Al) As contg. 0.3-0.8 wt.% Al), in which the ratio of the gp. III element having the smaller atomic radius to the gp. III element having the larger atomic radius, is at a min. near the AIII BV substrate and increases to a max. at the opposite surface, is improved by first epitaxially growing the ternary cpd. layer from a liquid phase onto a temporary monocrystalline substrate, then forming the permanent AIII BV substrate on the layer of the ternary cpd. and finally removing (at least partly) the temporary substrate, by this method, the first epitaxially formed surfaces becomes accessible; mechanicall strong structure is obtained.
FR7046399A 1970-12-23 1970-12-23 Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd Expired FR2119175A5 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7046399A FR2119175A5 (en) 1970-12-23 1970-12-23 Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd
NL7117428A NL7117428A (en) 1970-12-23 1971-12-18
DE2163075A DE2163075C2 (en) 1970-12-23 1971-12-18 Process for the production of electroluminescent semiconductor components
JP46102789A JPS5029787B1 (en) 1970-12-23 1971-12-20
GB5900771A GB1370430A (en) 1970-12-23 1971-12-20 Methods of manufacturing semi-conductor bodies
CA130494A CA930075A (en) 1970-12-23 1971-12-20 Method of manufacturing a semiconductor body
US00209763A US3823043A (en) 1970-12-23 1971-12-20 Method of manufacturing semiconductor body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7046399A FR2119175A5 (en) 1970-12-23 1970-12-23 Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd

Publications (1)

Publication Number Publication Date
FR2119175A5 true FR2119175A5 (en) 1972-08-04

Family

ID=9066248

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7046399A Expired FR2119175A5 (en) 1970-12-23 1970-12-23 Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd

Country Status (1)

Country Link
FR (1) FR2119175A5 (en)

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Legal Events

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