GB1451085A - Contacting semiconductors devices - Google Patents

Contacting semiconductors devices

Info

Publication number
GB1451085A
GB1451085A GB5679073A GB5679073A GB1451085A GB 1451085 A GB1451085 A GB 1451085A GB 5679073 A GB5679073 A GB 5679073A GB 5679073 A GB5679073 A GB 5679073A GB 1451085 A GB1451085 A GB 1451085A
Authority
GB
United Kingdom
Prior art keywords
layer
layers
semiconductor
electrodes
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5679073A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1451085A publication Critical patent/GB1451085A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01032Germanium [Ge]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1032III-V
    • H01L2924/10329Gallium arsenide [GaAs]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12032Schottky diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30105Capacitance

Abstract

1451085 Semiconductor devices RCA CORPORATION 7 Dec 1973 [11 Dec 1972] 56790/73 Heading H1K In a method of making a plurality of diodes of the kind comprising a semiconductor body 12, Fig. 1, sandwiched between mutually perpendicular beam lead electrodes 14, 16, arrays of electrodes 14, 16 are deposited on opposite surfaces of a semiconductor wafer which is subsequently etched away except where it is protected on both surfaces by electrode cross-overs. As shown, Fig. 3, a batch of Schottky diodes is formed by vapour-depositing a layer 21 of Ti on a III-V compound, e.g. GaAs, body 11 comprising a P<SP>+</SP> layer 22 supporting an N layer 20 and an N<SP>+</SP> layer 18. A layer 19 of Au (or Ag) is then evaporated or electroplated on to Ti layer 21, and both metal layers are photoetched to form electrodes 14. Temporary protective and "handle" layers 24, 26, Fig. 7, of Al and Cu respectively, are deposited over N<SP>+</SP> layer 18, and support layer 22 is electrolytically etched away. Schottky barrier electrodes 16 comprising layers of Ti 15 and Au 17 are formed on the exposed surface of N layer 20 by similar steps to those used to form electrodes 14, and layers 24, 26 are removed by etching. Finally semiconductor layers 18, 20 are etched in Caro's acid to produce discrete diodes. Semiconductor devices other than Schottky diodes may be similarly produced, and II-VI compounds, Si, and Ge may be employed as semiconductor.
GB5679073A 1972-12-11 1973-12-07 Contacting semiconductors devices Expired GB1451085A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31408972A 1972-12-11 1972-12-11

Publications (1)

Publication Number Publication Date
GB1451085A true GB1451085A (en) 1976-09-29

Family

ID=23218508

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5679073A Expired GB1451085A (en) 1972-12-11 1973-12-07 Contacting semiconductors devices

Country Status (10)

Country Link
JP (1) JPS5116291B2 (en)
BE (1) BE808461A (en)
BR (1) BR7309628D0 (en)
CA (1) CA998186A (en)
DE (1) DE2360055A1 (en)
FR (1) FR2210015A1 (en)
GB (1) GB1451085A (en)
IT (1) IT995593B (en)
NL (1) NL7316869A (en)
SE (1) SE385062B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2168843A (en) * 1982-12-08 1986-06-25 Int Rectifier Corp Manufacture of semiconductor devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368063A (en) * 1976-11-29 1978-06-17 Oki Electric Ind Co Ltd Logical circuit system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2168843A (en) * 1982-12-08 1986-06-25 Int Rectifier Corp Manufacture of semiconductor devices

Also Published As

Publication number Publication date
JPS4990488A (en) 1974-08-29
IT995593B (en) 1975-11-20
BE808461A (en) 1974-03-29
FR2210015A1 (en) 1974-07-05
SE385062B (en) 1976-05-31
DE2360055A1 (en) 1974-06-20
NL7316869A (en) 1974-06-13
CA998186A (en) 1976-10-05
BR7309628D0 (en) 1974-08-29
JPS5116291B2 (en) 1976-05-22

Similar Documents

Publication Publication Date Title
US5593917A (en) Method of making semiconductor components with electrochemical recovery of the substrate
GB1398006A (en) Semiconductor electroluminescent devices and to methods of making them
US3546542A (en) Integrated high voltage solar cell panel
US4080722A (en) Method of manufacturing semiconductor devices having a copper heat capacitor and/or copper heat sink
US3878008A (en) Method of forming high reliability mesa diode
GB1308707A (en) Television camera tubes
CN102208496A (en) Method of manufacturing semiconductor device
GB1451085A (en) Contacting semiconductors devices
US3271636A (en) Gallium arsenide semiconductor diode and method
US3913215A (en) Process for the production of a semiconductor component
US4543442A (en) GaAs Schottky barrier photo-responsive device and method of fabrication
US3947304A (en) Etching of group III-V semiconductors
CA1271850A (en) Method for fabricating a field-effect transistor with a self-aligned gate
US3667004A (en) Electroluminescent semiconductor display apparatus
US5418181A (en) Method of fabricating diode using grid recess
US4374392A (en) Monolithic integrated circuit interconnection and fabrication method
JPS61199666A (en) Field-effect transistor
US3375145A (en) Method of making semiconductor devices
KR900008408B1 (en) Electrode formulating method for iii-v family compound semiconductor device
US3856591A (en) Method for making beam lead device
JPS5961073A (en) Manufacture of semiconductor device
JPS57204175A (en) Manufacture of semiconductor device
JPS5712579A (en) Buried type semiconductor laser
JPS5842631B2 (en) Method for manufacturing junction gate field effect transistor
JPS62226670A (en) Manufacture of compound semiconductor solar cell

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee