GB1451085A - Contacting semiconductors devices - Google Patents
Contacting semiconductors devicesInfo
- Publication number
- GB1451085A GB1451085A GB5679073A GB5679073A GB1451085A GB 1451085 A GB1451085 A GB 1451085A GB 5679073 A GB5679073 A GB 5679073A GB 5679073 A GB5679073 A GB 5679073A GB 1451085 A GB1451085 A GB 1451085A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- layers
- semiconductor
- electrodes
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 150000001875 compounds Chemical class 0.000 abstract 2
- -1 GaAs Chemical class 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000003491 array Methods 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
Abstract
1451085 Semiconductor devices RCA CORPORATION 7 Dec 1973 [11 Dec 1972] 56790/73 Heading H1K In a method of making a plurality of diodes of the kind comprising a semiconductor body 12, Fig. 1, sandwiched between mutually perpendicular beam lead electrodes 14, 16, arrays of electrodes 14, 16 are deposited on opposite surfaces of a semiconductor wafer which is subsequently etched away except where it is protected on both surfaces by electrode cross-overs. As shown, Fig. 3, a batch of Schottky diodes is formed by vapour-depositing a layer 21 of Ti on a III-V compound, e.g. GaAs, body 11 comprising a P<SP>+</SP> layer 22 supporting an N layer 20 and an N<SP>+</SP> layer 18. A layer 19 of Au (or Ag) is then evaporated or electroplated on to Ti layer 21, and both metal layers are photoetched to form electrodes 14. Temporary protective and "handle" layers 24, 26, Fig. 7, of Al and Cu respectively, are deposited over N<SP>+</SP> layer 18, and support layer 22 is electrolytically etched away. Schottky barrier electrodes 16 comprising layers of Ti 15 and Au 17 are formed on the exposed surface of N layer 20 by similar steps to those used to form electrodes 14, and layers 24, 26 are removed by etching. Finally semiconductor layers 18, 20 are etched in Caro's acid to produce discrete diodes. Semiconductor devices other than Schottky diodes may be similarly produced, and II-VI compounds, Si, and Ge may be employed as semiconductor.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US31408972A | 1972-12-11 | 1972-12-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1451085A true GB1451085A (en) | 1976-09-29 |
Family
ID=23218508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5679073A Expired GB1451085A (en) | 1972-12-11 | 1973-12-07 | Contacting semiconductors devices |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS5116291B2 (en) |
BE (1) | BE808461A (en) |
BR (1) | BR7309628D0 (en) |
CA (1) | CA998186A (en) |
DE (1) | DE2360055A1 (en) |
FR (1) | FR2210015A1 (en) |
GB (1) | GB1451085A (en) |
IT (1) | IT995593B (en) |
NL (1) | NL7316869A (en) |
SE (1) | SE385062B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2168843A (en) * | 1982-12-08 | 1986-06-25 | Int Rectifier Corp | Manufacture of semiconductor devices |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5368063A (en) * | 1976-11-29 | 1978-06-17 | Oki Electric Ind Co Ltd | Logical circuit system |
-
1973
- 1973-10-04 IT IT2974473A patent/IT995593B/en active
- 1973-11-23 CA CA186,608A patent/CA998186A/en not_active Expired
- 1973-12-01 DE DE19732360055 patent/DE2360055A1/en active Pending
- 1973-12-07 GB GB5679073A patent/GB1451085A/en not_active Expired
- 1973-12-07 FR FR7343813A patent/FR2210015A1/fr not_active Withdrawn
- 1973-12-07 BR BR962873A patent/BR7309628D0/en unknown
- 1973-12-10 JP JP13856173A patent/JPS5116291B2/ja not_active Expired
- 1973-12-10 BE BE138720A patent/BE808461A/en unknown
- 1973-12-10 NL NL7316869A patent/NL7316869A/xx unknown
- 1973-12-10 SE SE7316639A patent/SE385062B/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2168843A (en) * | 1982-12-08 | 1986-06-25 | Int Rectifier Corp | Manufacture of semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
JPS4990488A (en) | 1974-08-29 |
IT995593B (en) | 1975-11-20 |
BE808461A (en) | 1974-03-29 |
FR2210015A1 (en) | 1974-07-05 |
SE385062B (en) | 1976-05-31 |
DE2360055A1 (en) | 1974-06-20 |
NL7316869A (en) | 1974-06-13 |
CA998186A (en) | 1976-10-05 |
BR7309628D0 (en) | 1974-08-29 |
JPS5116291B2 (en) | 1976-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5593917A (en) | Method of making semiconductor components with electrochemical recovery of the substrate | |
GB1398006A (en) | Semiconductor electroluminescent devices and to methods of making them | |
US3546542A (en) | Integrated high voltage solar cell panel | |
US4080722A (en) | Method of manufacturing semiconductor devices having a copper heat capacitor and/or copper heat sink | |
US3878008A (en) | Method of forming high reliability mesa diode | |
GB1308707A (en) | Television camera tubes | |
CN102208496A (en) | Method of manufacturing semiconductor device | |
GB1451085A (en) | Contacting semiconductors devices | |
US3271636A (en) | Gallium arsenide semiconductor diode and method | |
US3913215A (en) | Process for the production of a semiconductor component | |
US4543442A (en) | GaAs Schottky barrier photo-responsive device and method of fabrication | |
US3947304A (en) | Etching of group III-V semiconductors | |
CA1271850A (en) | Method for fabricating a field-effect transistor with a self-aligned gate | |
US3667004A (en) | Electroluminescent semiconductor display apparatus | |
US5418181A (en) | Method of fabricating diode using grid recess | |
US4374392A (en) | Monolithic integrated circuit interconnection and fabrication method | |
JPS61199666A (en) | Field-effect transistor | |
US3375145A (en) | Method of making semiconductor devices | |
KR900008408B1 (en) | Electrode formulating method for iii-v family compound semiconductor device | |
US3856591A (en) | Method for making beam lead device | |
JPS5961073A (en) | Manufacture of semiconductor device | |
JPS57204175A (en) | Manufacture of semiconductor device | |
JPS5712579A (en) | Buried type semiconductor laser | |
JPS5842631B2 (en) | Method for manufacturing junction gate field effect transistor | |
JPS62226670A (en) | Manufacture of compound semiconductor solar cell |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |