GB1451379A - Apparatus for producing a semiconductor device utilizing successive liquid growth - Google Patents

Apparatus for producing a semiconductor device utilizing successive liquid growth

Info

Publication number
GB1451379A
GB1451379A GB5797773A GB5797773A GB1451379A GB 1451379 A GB1451379 A GB 1451379A GB 5797773 A GB5797773 A GB 5797773A GB 5797773 A GB5797773 A GB 5797773A GB 1451379 A GB1451379 A GB 1451379A
Authority
GB
United Kingdom
Prior art keywords
substrate
hole
holes
semiconductor device
boat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5797773A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB5797773A priority Critical patent/GB1451379A/en
Publication of GB1451379A publication Critical patent/GB1451379A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/067—Boots or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1451379 Apparatus for epitaxial growth HANDOTAI KENKYU SHINKOKAI 14 Dec 1973 57977/73 Heading BIS In the production of a semiconductor device by epitaxial growth on a substrate an apparatus comprises a boat, a number of first holes connected by bores within the boat to a number of second holes with a falling temperature gradient from the first holes to the second, and a slide plate which may or may not be coupled to a cooling jig to position the substrate so as to expose the second holes to the surface of the substrate. The cooling jig may be made of carbon or platinum. In an embodiment shown in Fig. la, 3 is a boat having a hole 1 at a higher temperature than hole 2, a substrate 4 is held at hole 2, a cooling jig 5 and at heat insulating slide plate 6 are disposed underneath and around the substrate respectively. In this apparatus a material to be deposited is dissolved at hole 1, while jig 5 is cooled through the substrate 4 thereby producing epitaxial growth on the substrate. The substrate exemplified is GaAs and GaAIRs or GaRs is used as a solute in a solvent of Ga.
GB5797773A 1973-12-14 1973-12-14 Apparatus for producing a semiconductor device utilizing successive liquid growth Expired GB1451379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5797773A GB1451379A (en) 1973-12-14 1973-12-14 Apparatus for producing a semiconductor device utilizing successive liquid growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5797773A GB1451379A (en) 1973-12-14 1973-12-14 Apparatus for producing a semiconductor device utilizing successive liquid growth

Publications (1)

Publication Number Publication Date
GB1451379A true GB1451379A (en) 1976-09-29

Family

ID=10480509

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5797773A Expired GB1451379A (en) 1973-12-14 1973-12-14 Apparatus for producing a semiconductor device utilizing successive liquid growth

Country Status (1)

Country Link
GB (1) GB1451379A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2452177A1 (en) * 1979-03-19 1980-10-17 Siemens Ag PROCESS FOR MANUFACTURING EPITAXIAL LAYERS OF SEMICONDUCTOR MATERIAL ON SINGLE CRYSTAL SUBSTRATES ACCORDING TO LIQUID PHASE MOVEMENT EPITAXY
DE3036317A1 (en) * 1980-09-26 1982-05-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Liquid phase epitaxy appts. for mfg. semiconductor devices - where molten phase flows from cup shaped vessel into cell contg. substrates
EP0088579A1 (en) * 1982-03-01 1983-09-14 Zaidan Hojin Handotai Kenkyu Shinkokai Apparatus for performing solution growth relying on temperature difference technique
EP0137641A2 (en) * 1983-09-12 1985-04-17 Melvin S. Cook Rapid LPE crystal growth

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2452177A1 (en) * 1979-03-19 1980-10-17 Siemens Ag PROCESS FOR MANUFACTURING EPITAXIAL LAYERS OF SEMICONDUCTOR MATERIAL ON SINGLE CRYSTAL SUBSTRATES ACCORDING TO LIQUID PHASE MOVEMENT EPITAXY
DE3036317A1 (en) * 1980-09-26 1982-05-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Liquid phase epitaxy appts. for mfg. semiconductor devices - where molten phase flows from cup shaped vessel into cell contg. substrates
EP0088579A1 (en) * 1982-03-01 1983-09-14 Zaidan Hojin Handotai Kenkyu Shinkokai Apparatus for performing solution growth relying on temperature difference technique
US4565156A (en) * 1982-03-01 1986-01-21 Zaidan Hojin Handotai Kenkyu Shinkokai Apparatus for performing solution growth relying on temperature difference technique
EP0137641A2 (en) * 1983-09-12 1985-04-17 Melvin S. Cook Rapid LPE crystal growth
EP0137641A3 (en) * 1983-09-12 1986-10-22 Melvin S. Cook Rapid lpe crystal growth

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19931213