FR2150756A1 - Epitaxial growth furnace - with push plate for liquid phase and cover plates - Google Patents

Epitaxial growth furnace - with push plate for liquid phase and cover plates

Info

Publication number
FR2150756A1
FR2150756A1 FR7228837A FR7228837A FR2150756A1 FR 2150756 A1 FR2150756 A1 FR 2150756A1 FR 7228837 A FR7228837 A FR 7228837A FR 7228837 A FR7228837 A FR 7228837A FR 2150756 A1 FR2150756 A1 FR 2150756A1
Authority
FR
France
Prior art keywords
liquid phase
push plate
epitaxial growth
cover plates
growth furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7228837A
Other languages
English (en)
French (fr)
Other versions
FR2150756B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2150756A1 publication Critical patent/FR2150756A1/fr
Application granted granted Critical
Publication of FR2150756B1 publication Critical patent/FR2150756B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/066—Injection or centrifugal force system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • H10P14/263—
    • H10P14/265—
    • H10P14/2911—
    • H10P14/3421—
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7228837A 1971-08-30 1972-07-26 Epitaxial growth furnace - with push plate for liquid phase and cover plates Granted FR2150756A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17585671A 1971-08-30 1971-08-30

Publications (2)

Publication Number Publication Date
FR2150756A1 true FR2150756A1 (en) 1973-04-13
FR2150756B1 FR2150756B1 (OSRAM) 1975-09-12

Family

ID=22641941

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7228837A Granted FR2150756A1 (en) 1971-08-30 1972-07-26 Epitaxial growth furnace - with push plate for liquid phase and cover plates

Country Status (4)

Country Link
JP (1) JPS4832779A (OSRAM)
DE (1) DE2242138A1 (OSRAM)
FR (1) FR2150756A1 (OSRAM)
IT (1) IT964142B (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440567A (en) * 1977-09-06 1979-03-30 Matsushita Electric Ind Co Ltd Crystal growth device
DE3429440A1 (de) * 1984-08-10 1986-02-20 Hoechst Ag, 6230 Frankfurt Polyvinylbutyral mit reduzierter klebrigkeit und verbesserter reissfestigkeit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1363006A (en) * 1971-09-21 1974-08-14 Morgan Refractories Ltd Cermet articles

Also Published As

Publication number Publication date
JPS4832779A (OSRAM) 1973-05-02
DE2242138A1 (de) 1973-03-08
IT964142B (it) 1974-01-21
FR2150756B1 (OSRAM) 1975-09-12

Similar Documents

Publication Publication Date Title
BE788374A (fr) Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat
IT1091351B (it) Procedimento per formare uno strato epitassiale sulla superficie di un sottostrato particolarmente per semiconduttori
FR2083740A5 (en) Laser applied surface film
BE831114A (fr) Procede pour la realisation de structures fines a partir de matieres vaporisables sur un substrat, et structures obtenues par ce procede
ES346281A1 (es) Procedimiento para formar una cubierta selladora sobre una superficie.
FR2150756A1 (en) Epitaxial growth furnace - with push plate for liquid phase and cover plates
AU466289B2 (en) Apparatus for aligning a mask with respect toa semiconductor substrate
GB1433161A (en) Epitaxially grown layers
JPS5231672A (en) Ceramic package
AU4566672A (en) Method of epitaxially depositing ternary iii-v compounds from the liquid phase
FR1469127A (fr) Procédé pour déposer épitaxialement une couche cristalline
CA978663A (en) Method and device for the epitaxial deposition of a layer of crystalline material on a flat side of a monocrystalline substrate from a liquid phase
IT946902B (it) Substrato di spinello accresciuto secondo il metodo czochralski modi ficato superficialmente per mezzo di un metodo di diffusione a sta to solido e metodo relativo
CA966040A (en) Method of forming an epitaxial semiconductor layer with smooth surface
OA03978A (fr) Procédé d'ancrage de couche élastomère sur un substrat.
CH473907A (fr) Procédé de dépôt d'une couche métallique sur un substrat par évaporation sous vide
CA993103A (en) Locally thinned magnetic plate forming channels for magnetic bubble domains
JPS5231665A (en) Growing method of semiconductor crystal
DK125962B (da) Formeværk til korrugering af plade.
FR2153337A1 (en) Chemical tower liquid trickler - has expanded metal sheets for fine distribution of liquid
FR2145829A5 (en) Semiconductor cpd epitaxial growth - from soln in esp one metal of cpd
JPS5248466A (en) Method for vapor growth of semiconductor crystal
JPS5223265A (en) Method of processing semiconductor materials
FR2252871A1 (en) Epitaxial deposition from a liq. - on a series of monocrystalline substrates e.g. gallium phosphide
FR2245403A1 (en) Epitaxial deposition from the liquid phase - on a series of semiconductor substrates

Legal Events

Date Code Title Description
ST Notification of lapse