FR2145371A1 - Radiation detector - using semiconductor single crystal body with nip structure - Google Patents
Radiation detector - using semiconductor single crystal body with nip structureInfo
- Publication number
- FR2145371A1 FR2145371A1 FR7125291A FR7125291A FR2145371A1 FR 2145371 A1 FR2145371 A1 FR 2145371A1 FR 7125291 A FR7125291 A FR 7125291A FR 7125291 A FR7125291 A FR 7125291A FR 2145371 A1 FR2145371 A1 FR 2145371A1
- Authority
- FR
- France
- Prior art keywords
- type
- esp
- window
- single crystal
- radiation detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000463 material Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
- H10F30/2925—Li-compensated PIN gamma-ray detectors
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7125291A FR2145371A1 (en) | 1971-07-09 | 1971-07-09 | Radiation detector - using semiconductor single crystal body with nip structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7125291A FR2145371A1 (en) | 1971-07-09 | 1971-07-09 | Radiation detector - using semiconductor single crystal body with nip structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2145371A1 true FR2145371A1 (en) | 1973-02-23 |
| FR2145371B1 FR2145371B1 (oth) | 1974-08-19 |
Family
ID=9080153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7125291A Granted FR2145371A1 (en) | 1971-07-09 | 1971-07-09 | Radiation detector - using semiconductor single crystal body with nip structure |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2145371A1 (oth) |
-
1971
- 1971-07-09 FR FR7125291A patent/FR2145371A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2145371B1 (oth) | 1974-08-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |