FR2142073A1 - - Google Patents

Info

Publication number
FR2142073A1
FR2142073A1 FR7222016A FR7222016A FR2142073A1 FR 2142073 A1 FR2142073 A1 FR 2142073A1 FR 7222016 A FR7222016 A FR 7222016A FR 7222016 A FR7222016 A FR 7222016A FR 2142073 A1 FR2142073 A1 FR 2142073A1
Authority
FR
France
Prior art keywords
semiconductor body
substrate
metal layer
temperature
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7222016A
Other languages
English (en)
Other versions
FR2142073B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2142073A1 publication Critical patent/FR2142073A1/fr
Application granted granted Critical
Publication of FR2142073B1 publication Critical patent/FR2142073B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Ceramic Products (AREA)
FR7222016A 1971-06-17 1972-06-19 Expired FR2142073B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2844971A GB1389542A (en) 1971-06-17 1971-06-17 Methods of securing a semiconductor body to a support

Publications (2)

Publication Number Publication Date
FR2142073A1 true FR2142073A1 (fr) 1973-01-26
FR2142073B1 FR2142073B1 (fr) 1977-12-23

Family

ID=10275803

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7222016A Expired FR2142073B1 (fr) 1971-06-17 1972-06-19

Country Status (5)

Country Link
US (1) US3883946A (fr)
DE (1) DE2229070A1 (fr)
FR (1) FR2142073B1 (fr)
GB (1) GB1389542A (fr)
NL (1) NL7208027A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2308704A1 (fr) * 1975-04-23 1976-11-19 Rolls Royce Procede d'enduction de surface metallique par electrophorese
FR2540673A1 (fr) * 1983-02-03 1984-08-10 Ni Pt I Sistem Planirou Uprav Procede de fabrication d'un element redresseur et element redresseur obtenu par ledit procede

Families Citing this family (30)

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US3981427A (en) * 1975-04-28 1976-09-21 Brookes Ronald R Method of laminating graphite sheets to a metal substrate
US3956821A (en) * 1975-04-28 1976-05-18 Fairchild Camera And Instrument Corporation Method of attaching semiconductor die to package substrates
US4181249A (en) * 1977-08-26 1980-01-01 Hughes Aircraft Company Eutectic die attachment method for integrated circuits
FR2431900A1 (fr) * 1978-07-25 1980-02-22 Thomson Csf Systeme de soudure d'un laser a semiconducteur sur un socle metallique
IT1210953B (it) * 1982-11-19 1989-09-29 Ates Componenti Elettron Metodo per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile.
GB2132601B (en) * 1982-12-23 1986-08-20 Ferranti Plc Joining articles of materials of different expansion coefficients
JPS59193036A (ja) * 1983-04-16 1984-11-01 Toshiba Corp 半導体装置の製造方法
GB8323065D0 (en) * 1983-08-26 1983-09-28 Rca Corp Flux free photo-detector soldering
US4582240A (en) * 1984-02-08 1986-04-15 Gould Inc. Method for low temperature, low pressure metallic diffusion bonding of piezoelectric components
US4605833A (en) * 1984-03-15 1986-08-12 Westinghouse Electric Corp. Lead bonding of integrated circuit chips
US4609139A (en) * 1984-05-14 1986-09-02 Rca Corporation Method of burnishing malleable films on semiconductor substrates
US4576326A (en) * 1984-05-14 1986-03-18 Rca Corporation Method of bonding semiconductor devices to heatsinks
US4810671A (en) * 1986-06-12 1989-03-07 Intel Corporation Process for bonding die to substrate using a gold/silicon seed
US4771018A (en) * 1986-06-12 1988-09-13 Intel Corporation Process of attaching a die to a substrate using gold/silicon seed
ES2035837T3 (es) * 1986-08-18 1993-05-01 Siemens Aktiengesellschaft Componente de capa de relleno.
US4829020A (en) * 1987-10-23 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Substrate solder barriers for semiconductor epilayer growth
DE4220875A1 (de) * 1992-06-25 1994-01-13 Eupec Gmbh & Co Kg Verfahren zum Verbinden eines Halbleiterkörpers mit Kontaktscheiben
JP3579740B2 (ja) * 1998-04-18 2004-10-20 Ｔｄｋ株式会社 電子部品の製造方法
EP1211011B1 (fr) * 1999-10-20 2011-04-06 Senju Metal Industry Co., Ltd. Methode de fabrication d'un materiau revetu de brasure ; materiel revetu de brasure correspondant
FI108376B (fi) * 2000-03-21 2002-01-15 Outokumpu Oy Menetelmõ sõhk÷õjohtavan liitoksen muodostamiseksi
KR100387488B1 (ko) * 2001-04-25 2003-06-18 현대자동차주식회사 레이저 클래딩 공법을 이용한 밸브 시트 제조방법
JP2003209144A (ja) * 2002-01-16 2003-07-25 Seiko Epson Corp 半導体装置及びその製造方法、半導体装置の製造装置並びに電子機器
US7436058B2 (en) * 2002-05-09 2008-10-14 Intel Corporation Reactive solder material
US9214442B2 (en) 2007-03-19 2015-12-15 Infineon Technologies Ag Power semiconductor module, method for producing a power semiconductor module, and semiconductor chip
US8587116B2 (en) 2010-09-30 2013-11-19 Infineon Technologies Ag Semiconductor module comprising an insert
CN103305909B (zh) * 2012-03-14 2016-01-20 东莞市中镓半导体科技有限公司 一种用于GaN生长的复合衬底的制备方法
JPWO2016194964A1 (ja) * 2015-06-04 2018-03-22 住友電気工業株式会社 プリント配線板用原板及びプリント配線板
CN106735982A (zh) * 2016-12-09 2017-05-31 徐超 一种电机绕组引线与绕组间电磁线连接方法
EP3499554A1 (fr) * 2017-12-13 2019-06-19 Heraeus Deutschland GmbH & Co. KG Procédé de fabrication d'un agencement en sandwich de deux composants avec de la soudure placée entre lesdits composants par thermocompression au-dessous de la température de fusion de la soudure d'une préforme de soudure
EP3499553A1 (fr) * 2017-12-13 2019-06-19 Heraeus Deutschland GmbH & Co. KG Procédé de fabrication d'un composant connecté à une préforme de soudure par thermocompression au-dessous de la température de fusion de la soudure

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GB1374626A (en) * 1970-10-30 1974-11-20 Matsushita Electronics Corp Method of making a semiconductor device

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FR2540673A1 (fr) * 1983-02-03 1984-08-10 Ni Pt I Sistem Planirou Uprav Procede de fabrication d'un element redresseur et element redresseur obtenu par ledit procede

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DE2229070A1 (de) 1973-01-11
NL7208027A (fr) 1972-12-19
GB1389542A (en) 1975-04-03
FR2142073B1 (fr) 1977-12-23
US3883946A (en) 1975-05-20

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