FR2112250A1 - Molydenum gate fet - using doped oxides for diffusion and passivation - Google Patents

Molydenum gate fet - using doped oxides for diffusion and passivation

Info

Publication number
FR2112250A1
FR2112250A1 FR7135202A FR7135202A FR2112250A1 FR 2112250 A1 FR2112250 A1 FR 2112250A1 FR 7135202 A FR7135202 A FR 7135202A FR 7135202 A FR7135202 A FR 7135202A FR 2112250 A1 FR2112250 A1 FR 2112250A1
Authority
FR
France
Prior art keywords
diffusion
passivation
molydenum
gate
doped oxides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7135202A
Other languages
English (en)
French (fr)
Other versions
FR2112250B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of FR2112250A1 publication Critical patent/FR2112250A1/fr
Application granted granted Critical
Publication of FR2112250B1 publication Critical patent/FR2112250B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7135202A 1970-10-01 1971-09-30 Molydenum gate fet - using doped oxides for diffusion and passivation Granted FR2112250A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7722270A 1970-10-01 1970-10-01
US9413870A 1970-12-01 1970-12-01

Publications (2)

Publication Number Publication Date
FR2112250A1 true FR2112250A1 (en) 1972-06-16
FR2112250B1 FR2112250B1 (enExample) 1977-08-05

Family

ID=26759038

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7135202A Granted FR2112250A1 (en) 1970-10-01 1971-09-30 Molydenum gate fet - using doped oxides for diffusion and passivation

Country Status (3)

Country Link
JP (1) JPS5514546B1 (enExample)
CH (1) CH531255A (enExample)
FR (1) FR2112250A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039939U (ja) * 1983-08-26 1985-03-20 株式会社学習研究社 上皿てこ式の台はかり

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3566518A (en) * 1967-10-13 1971-03-02 Gen Electric Method for fabricating field-effect transistor devices and integrated circuit modules containing the same by selective diffusion of activator impurities through preselected portions of passivating-insulating films

Also Published As

Publication number Publication date
CH531255A (de) 1972-11-30
JPS5514546B1 (enExample) 1980-04-17
FR2112250B1 (enExample) 1977-08-05

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