FR2092729A7 - Arsenic diffusion in silicon - from arsine, nitrogen, oxygen mixtures giving low sheet resistivity - Google Patents

Arsenic diffusion in silicon - from arsine, nitrogen, oxygen mixtures giving low sheet resistivity

Info

Publication number
FR2092729A7
FR2092729A7 FR7021677A FR7021677A FR2092729A7 FR 2092729 A7 FR2092729 A7 FR 2092729A7 FR 7021677 A FR7021677 A FR 7021677A FR 7021677 A FR7021677 A FR 7021677A FR 2092729 A7 FR2092729 A7 FR 2092729A7
Authority
FR
France
Prior art keywords
silicon
nitrogen
arsine
sheet resistivity
low sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7021677A
Other languages
English (en)
French (fr)
Other versions
FR2092729B3 (ref
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7021677A priority Critical patent/FR2092729A7/fr
Publication of FR2092729A7 publication Critical patent/FR2092729A7/fr
Application granted granted Critical
Publication of FR2092729B3 publication Critical patent/FR2092729B3/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Formation Of Insulating Films (AREA)
FR7021677A 1970-06-12 1970-06-12 Arsenic diffusion in silicon - from arsine, nitrogen, oxygen mixtures giving low sheet resistivity Expired FR2092729A7 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7021677A FR2092729A7 (en) 1970-06-12 1970-06-12 Arsenic diffusion in silicon - from arsine, nitrogen, oxygen mixtures giving low sheet resistivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7021677A FR2092729A7 (en) 1970-06-12 1970-06-12 Arsenic diffusion in silicon - from arsine, nitrogen, oxygen mixtures giving low sheet resistivity

Publications (2)

Publication Number Publication Date
FR2092729A7 true FR2092729A7 (en) 1972-01-28
FR2092729B3 FR2092729B3 (ref) 1973-03-16

Family

ID=9057101

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7021677A Expired FR2092729A7 (en) 1970-06-12 1970-06-12 Arsenic diffusion in silicon - from arsine, nitrogen, oxygen mixtures giving low sheet resistivity

Country Status (1)

Country Link
FR (1) FR2092729A7 (ref)

Also Published As

Publication number Publication date
FR2092729B3 (ref) 1973-03-16

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Legal Events

Date Code Title Description
ST Notification of lapse