FR2090329A1 - Epitaxial silicon layer mfre - on substrate contng opposite - conductivity zones - Google Patents

Epitaxial silicon layer mfre - on substrate contng opposite - conductivity zones

Info

Publication number
FR2090329A1
FR2090329A1 FR7119328A FR7119328A FR2090329A1 FR 2090329 A1 FR2090329 A1 FR 2090329A1 FR 7119328 A FR7119328 A FR 7119328A FR 7119328 A FR7119328 A FR 7119328A FR 2090329 A1 FR2090329 A1 FR 2090329A1
Authority
FR
France
Prior art keywords
substrate
mfre
contng
opposite
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7119328A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2090329A1 publication Critical patent/FR2090329A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

To prevent damage to the boundaries of the inset opposite conductivity zones by outward diffusion, the surface of the substrate is first chemically cleaned by exposure to hydrogen at 1000 degrees C for 5-30 mins immediately followed by deposition of Si, e.g. from a SiCl4 source with the substrate still held at below 1000 degrees C. After the initial deposition, further epitaxial growth may take place at 1100-1250 degrees C.
FR7119328A 1970-05-27 1971-05-27 Epitaxial silicon layer mfre - on substrate contng opposite - conductivity zones Withdrawn FR2090329A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4090370A 1970-05-27 1970-05-27

Publications (1)

Publication Number Publication Date
FR2090329A1 true FR2090329A1 (en) 1972-01-14

Family

ID=21913624

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7119328A Withdrawn FR2090329A1 (en) 1970-05-27 1971-05-27 Epitaxial silicon layer mfre - on substrate contng opposite - conductivity zones

Country Status (2)

Country Link
DE (1) DE2126104A1 (en)
FR (1) FR2090329A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69609307T2 (en) * 1995-10-20 2001-02-08 Koninkl Philips Electronics Nv PRODUCTION OF A SEMICONDUCTOR DEVICE WITH A SELECTIVELY DETECTED SEMICONDUCTOR ZONE

Also Published As

Publication number Publication date
DE2126104A1 (en) 1971-12-09

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Legal Events

Date Code Title Description
ST Notification of lapse