FR2081249A1 - Junction field effect transistors - using tantlum oxide dielectric and needing fewer masks - Google Patents

Junction field effect transistors - using tantlum oxide dielectric and needing fewer masks

Info

Publication number
FR2081249A1
FR2081249A1 FR7010340A FR7010340A FR2081249A1 FR 2081249 A1 FR2081249 A1 FR 2081249A1 FR 7010340 A FR7010340 A FR 7010340A FR 7010340 A FR7010340 A FR 7010340A FR 2081249 A1 FR2081249 A1 FR 2081249A1
Authority
FR
France
Prior art keywords
field effect
effect transistors
junction field
tantlum
oxide dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7010340A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM
Original Assignee
Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM filed Critical Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM
Priority to FR7010340A priority Critical patent/FR2081249A1/fr
Priority to DE19712113831 priority patent/DE2113831A1/de
Publication of FR2081249A1 publication Critical patent/FR2081249A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR7010340A 1970-03-23 1970-03-23 Junction field effect transistors - using tantlum oxide dielectric and needing fewer masks Withdrawn FR2081249A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR7010340A FR2081249A1 (en) 1970-03-23 1970-03-23 Junction field effect transistors - using tantlum oxide dielectric and needing fewer masks
DE19712113831 DE2113831A1 (de) 1970-03-23 1971-03-23 Sperrschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7010340A FR2081249A1 (en) 1970-03-23 1970-03-23 Junction field effect transistors - using tantlum oxide dielectric and needing fewer masks

Publications (1)

Publication Number Publication Date
FR2081249A1 true FR2081249A1 (en) 1971-12-03

Family

ID=9052716

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7010340A Withdrawn FR2081249A1 (en) 1970-03-23 1970-03-23 Junction field effect transistors - using tantlum oxide dielectric and needing fewer masks

Country Status (2)

Country Link
DE (1) DE2113831A1 (fr)
FR (1) FR2081249A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2263149A1 (de) * 1971-12-24 1973-07-19 Nippon Electric Co Oberflaechen-feldeffekt-transistor mit niedriger und stabiler tor-schwellwertspannung

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS524426B2 (fr) * 1973-04-20 1977-02-03

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2263149A1 (de) * 1971-12-24 1973-07-19 Nippon Electric Co Oberflaechen-feldeffekt-transistor mit niedriger und stabiler tor-schwellwertspannung

Also Published As

Publication number Publication date
DE2113831A1 (de) 1971-10-14

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