FR1263961A - Procédés de fabrication de dispositifs semiconducteurs et circuits utilisant ces dispositifs - Google Patents

Procédés de fabrication de dispositifs semiconducteurs et circuits utilisant ces dispositifs

Info

Publication number
FR1263961A
FR1263961A FR826159A FR826159A FR1263961A FR 1263961 A FR1263961 A FR 1263961A FR 826159 A FR826159 A FR 826159A FR 826159 A FR826159 A FR 826159A FR 1263961 A FR1263961 A FR 1263961A
Authority
FR
France
Prior art keywords
devices
circuits
methods
manufacturing semiconductor
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR826159A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1263961A publication Critical patent/FR1263961A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/979—Tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR826159A 1959-08-05 1960-05-04 Procédés de fabrication de dispositifs semiconducteurs et circuits utilisant ces dispositifs Expired FR1263961A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US831818A US3079512A (en) 1959-08-05 1959-08-05 Semiconductor devices comprising an esaki diode and conventional diode in a unitary structure

Publications (1)

Publication Number Publication Date
FR1263961A true FR1263961A (fr) 1961-06-19

Family

ID=25259936

Family Applications (1)

Application Number Title Priority Date Filing Date
FR826159A Expired FR1263961A (fr) 1959-08-05 1960-05-04 Procédés de fabrication de dispositifs semiconducteurs et circuits utilisant ces dispositifs

Country Status (5)

Country Link
US (1) US3079512A (fr)
DE (1) DE1152763C2 (fr)
FR (1) FR1263961A (fr)
GB (1) GB921264A (fr)
NL (2) NL250955A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1207504B (de) * 1961-06-12 1965-12-23 Ibm Halbleiterdoppeldiode mit zwei einander beruehrenden gleich dotierten Zonen mit unterschiedlichem Wert der Leitfaehigkeit
DE1208408B (de) * 1961-06-05 1966-01-05 Gen Electric Steuerbares und schaltbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps
DE1230500B (de) * 1961-09-08 1966-12-15 Bendix Corp Steuerbares Halbleiterbauelement mit einem Halbleiterkoerper mit der Zonenfolge NN P oder PP N

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3146135A (en) * 1959-05-11 1964-08-25 Clevite Corp Four layer semiconductive device
US3242016A (en) * 1960-01-07 1966-03-22 Rca Corp Rectifying devices
US3263085A (en) * 1960-02-01 1966-07-26 Rca Corp Radiation powered semiconductor devices
US3114864A (en) * 1960-02-08 1963-12-17 Fairchild Camera Instr Co Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions
NL264058A (fr) * 1960-07-30
NL122284C (fr) * 1960-08-25
BE621278A (fr) * 1960-10-14 1900-01-01
US3225272A (en) * 1961-01-23 1965-12-21 Bendix Corp Semiconductor triode
US3134905A (en) * 1961-02-03 1964-05-26 Bell Telephone Labor Inc Photosensitive semiconductor junction device
US3309241A (en) * 1961-03-21 1967-03-14 Jr Donald C Dickson P-n junction having bulk breakdown only and method of producing same
US3242392A (en) * 1961-04-06 1966-03-22 Nippon Electric Co Low rc semiconductor diode
US3207635A (en) * 1961-04-19 1965-09-21 Ibm Tunnel diode and process therefor
US3234057A (en) * 1961-06-23 1966-02-08 Ibm Semiconductor heterojunction device
US3362856A (en) * 1961-11-13 1968-01-09 Transitron Electronic Corp Silicon transistor device
US3211923A (en) * 1962-03-13 1965-10-12 Westinghouse Electric Corp Integrated semiconductor tunnel diode and resistance
US3244949A (en) * 1962-03-16 1966-04-05 Fairchild Camera Instr Co Voltage regulator
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3304470A (en) * 1963-03-14 1967-02-14 Nippon Electric Co Negative resistance semiconductor device utilizing tunnel effect
US3244566A (en) * 1963-03-20 1966-04-05 Trw Semiconductors Inc Semiconductor and method of forming by diffusion
US3254234A (en) * 1963-04-12 1966-05-31 Westinghouse Electric Corp Semiconductor devices providing tunnel diode functions
US3317801A (en) * 1963-06-19 1967-05-02 Jr Freeman D Shepherd Tunneling enhanced transistor
US3291658A (en) * 1963-06-28 1966-12-13 Ibm Process of making tunnel diodes that results in a peak current that is maintained over a long period of time
US3324359A (en) * 1963-09-30 1967-06-06 Gen Electric Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction
US3391310A (en) * 1964-01-13 1968-07-02 Gen Electric Semiconductor switch
US3373321A (en) * 1964-02-14 1968-03-12 Westinghouse Electric Corp Double diffusion solar cell fabrication
US3327136A (en) * 1964-03-30 1967-06-20 Abraham George Variable gain tunneling
US3284681A (en) * 1964-07-01 1966-11-08 Gen Electric Pnpn semiconductor switching devices with stabilized firing characteristics
US3309240A (en) * 1964-07-02 1967-03-14 Honeywell Inc Tunnel diodes
FR1500047A (fr) * 1966-06-15 1967-11-03 Comp Generale Electricite Détecteur de lumière à semiconducteurs
US3532945A (en) * 1967-08-30 1970-10-06 Fairchild Camera Instr Co Semiconductor devices having a low capacitance junction
US3564245A (en) * 1968-01-24 1971-02-16 Bulova Watch Co Inc Integrated circuit multicell p-n junction radiation detectors with diodes to reduce capacitance of networks
US3943554A (en) * 1973-07-30 1976-03-09 Signetics Corporation Threshold switching integrated circuit and method for forming the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE520380A (fr) * 1952-06-02
US2778956A (en) * 1952-10-31 1957-01-22 Bell Telephone Labor Inc Semiconductor signal translating devices
DE1000115B (de) * 1954-03-03 1957-01-03 Standard Elektrik Ag Verfahren zur Herstellung von Halbleiterschichtkristallen mit PN-UEbergang
US2879409A (en) * 1954-09-09 1959-03-24 Arthur W Holt Diode amplifier
BE545324A (fr) * 1955-02-18
US2894152A (en) * 1955-05-16 1959-07-07 Ibm Crystal diode with improved recovery time
FR1154601A (fr) * 1955-07-13 1958-04-14 Western Electric Co Commutateur à résistance négative à semi-conducteur
US2792540A (en) * 1955-08-04 1957-05-14 Bell Telephone Labor Inc Junction transistor
NL106770C (fr) * 1956-04-25
US2954307A (en) * 1957-03-18 1960-09-27 Shockley William Grain boundary semiconductor device and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208408B (de) * 1961-06-05 1966-01-05 Gen Electric Steuerbares und schaltbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps
DE1207504B (de) * 1961-06-12 1965-12-23 Ibm Halbleiterdoppeldiode mit zwei einander beruehrenden gleich dotierten Zonen mit unterschiedlichem Wert der Leitfaehigkeit
DE1230500B (de) * 1961-09-08 1966-12-15 Bendix Corp Steuerbares Halbleiterbauelement mit einem Halbleiterkoerper mit der Zonenfolge NN P oder PP N

Also Published As

Publication number Publication date
NL250955A (fr)
DE1152763B (de) 1963-08-14
NL135881C (fr)
DE1152763C2 (de) 1964-02-20
US3079512A (en) 1963-02-26
GB921264A (en) 1963-03-20

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