FR1275836A - Dispositifs à semi-conducteur et méthode de fabrication - Google Patents

Dispositifs à semi-conducteur et méthode de fabrication

Info

Publication number
FR1275836A
FR1275836A FR846439A FR846439A FR1275836A FR 1275836 A FR1275836 A FR 1275836A FR 846439 A FR846439 A FR 846439A FR 846439 A FR846439 A FR 846439A FR 1275836 A FR1275836 A FR 1275836A
Authority
FR
France
Prior art keywords
manufacture
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR846439A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Priority to FR846439A priority Critical patent/FR1275836A/fr
Priority claimed from US74815A external-priority patent/US3197839A/en
Application granted granted Critical
Publication of FR1275836A publication Critical patent/FR1275836A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
FR846439A 1959-12-11 1960-12-09 Dispositifs à semi-conducteur et méthode de fabrication Expired FR1275836A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR846439A FR1275836A (fr) 1959-12-11 1960-12-09 Dispositifs à semi-conducteur et méthode de fabrication

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US85899559A 1959-12-11 1959-12-11
FR846439A FR1275836A (fr) 1959-12-11 1960-12-09 Dispositifs à semi-conducteur et méthode de fabrication
US74815A US3197839A (en) 1959-12-11 1960-12-09 Method of fabricating semiconductor devices
US315189A US3237064A (en) 1959-12-11 1963-10-10 Small pn-junction tunnel-diode semiconductor

Publications (1)

Publication Number Publication Date
FR1275836A true FR1275836A (fr) 1961-11-10

Family

ID=27445249

Family Applications (1)

Application Number Title Priority Date Filing Date
FR846439A Expired FR1275836A (fr) 1959-12-11 1960-12-09 Dispositifs à semi-conducteur et méthode de fabrication

Country Status (1)

Country Link
FR (1) FR1275836A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212216B (de) * 1961-11-22 1966-03-10 Siemens Ag Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212216B (de) * 1961-11-22 1966-03-10 Siemens Ag Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen

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