FR1242704A - Dispositifs semi-conducteurs et procédé pour leur fabrication - Google Patents
Dispositifs semi-conducteurs et procédé pour leur fabricationInfo
- Publication number
- FR1242704A FR1242704A FR813052A FR813052A FR1242704A FR 1242704 A FR1242704 A FR 1242704A FR 813052 A FR813052 A FR 813052A FR 813052 A FR813052 A FR 813052A FR 1242704 A FR1242704 A FR 1242704A
- Authority
- FR
- France
- Prior art keywords
- manufacture
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US782874A US2975080A (en) | 1958-12-24 | 1958-12-24 | Production of controlled p-n junctions |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1242704A true FR1242704A (fr) | 1960-09-30 |
Family
ID=25127455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR813052A Expired FR1242704A (fr) | 1958-12-24 | 1959-12-15 | Dispositifs semi-conducteurs et procédé pour leur fabrication |
Country Status (5)
Country | Link |
---|---|
US (1) | US2975080A (fr) |
DE (1) | DE1246685B (fr) |
FR (1) | FR1242704A (fr) |
GB (1) | GB929575A (fr) |
NL (2) | NL135006C (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3220896A (en) * | 1961-07-17 | 1965-11-30 | Raytheon Co | Transistor |
US3183131A (en) * | 1961-08-23 | 1965-05-11 | Motorola Inc | Semiconductor diffusion method |
NL272046A (fr) * | 1961-11-30 | |||
US3437533A (en) * | 1966-12-13 | 1969-04-08 | Rca Corp | Method of fabricating semiconductor devices |
US3479234A (en) * | 1967-05-01 | 1969-11-18 | Gen Electric | Method of producing field effect transistors |
US3658606A (en) * | 1969-04-01 | 1972-04-25 | Ibm | Diffusion source and method of producing same |
US3650854A (en) * | 1970-08-03 | 1972-03-21 | Ibm | Method of fabricating a transistor having improved emitter-base junction breakdown voltage characteristics |
US3767485A (en) * | 1971-12-29 | 1973-10-23 | A Sahagun | Method for producing improved pn junction |
JPS5062385A (fr) * | 1973-10-02 | 1975-05-28 | ||
US4740477A (en) * | 1985-10-04 | 1988-04-26 | General Instrument Corporation | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
US5166769A (en) * | 1988-07-18 | 1992-11-24 | General Instrument Corporation | Passitvated mesa semiconductor and method for making same |
US4980315A (en) * | 1988-07-18 | 1990-12-25 | General Instrument Corporation | Method of making a passivated P-N junction in mesa semiconductor structure |
EA012664B1 (ru) * | 2005-02-18 | 2009-12-30 | Агк Флэт Гласс Юроп Са | Способ селективного травления поверхности стеклянного изделия |
CN109309001B (zh) * | 2017-07-26 | 2022-05-03 | 天津环鑫科技发展有限公司 | 一种采用印刷工艺制作gpp芯片的方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2629800A (en) * | 1950-04-15 | 1953-02-24 | Bell Telephone Labor Inc | Semiconductor signal translating device |
US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
US2796562A (en) * | 1952-06-02 | 1957-06-18 | Rca Corp | Semiconductive device and method of fabricating same |
BE530566A (fr) * | 1953-07-22 | |||
US2804405A (en) * | 1954-12-24 | 1957-08-27 | Bell Telephone Labor Inc | Manufacture of silicon devices |
US2845374A (en) * | 1955-05-23 | 1958-07-29 | Texas Instruments Inc | Semiconductor unit and method of making same |
NL207910A (fr) * | 1955-06-20 | |||
US2921362A (en) * | 1955-06-27 | 1960-01-19 | Honeywell Regulator Co | Process for the production of semiconductor devices |
US2898247A (en) * | 1955-10-24 | 1959-08-04 | Ibm | Fabrication of diffused junction semi-conductor devices |
US2828232A (en) * | 1956-05-01 | 1958-03-25 | Hughes Aircraft Co | Method for producing junctions in semi-conductor device |
US2929751A (en) * | 1956-11-15 | 1960-03-22 | Gen Electric Co Ltd | Manufacture of semiconductor devices |
-
0
- NL NL246742D patent/NL246742A/xx unknown
- NL NL135006D patent/NL135006C/xx active
-
1958
- 1958-12-24 US US782874A patent/US2975080A/en not_active Expired - Lifetime
-
1959
- 1959-12-01 GB GB40826/59A patent/GB929575A/en not_active Expired
- 1959-12-15 FR FR813052A patent/FR1242704A/fr not_active Expired
- 1959-12-21 DE DER26983A patent/DE1246685B/de active Pending
Also Published As
Publication number | Publication date |
---|---|
US2975080A (en) | 1961-03-14 |
NL135006C (fr) | |
NL246742A (fr) | |
DE1246685B (de) | 1967-08-10 |
GB929575A (en) | 1963-06-26 |
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