FR1154601A - Commutateur à résistance négative à semi-conducteur - Google Patents
Commutateur à résistance négative à semi-conducteurInfo
- Publication number
- FR1154601A FR1154601A FR1154601DA FR1154601A FR 1154601 A FR1154601 A FR 1154601A FR 1154601D A FR1154601D A FR 1154601DA FR 1154601 A FR1154601 A FR 1154601A
- Authority
- FR
- France
- Prior art keywords
- solid state
- negative resistance
- resistance switch
- state negative
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1154601XA | 1955-07-13 | 1955-07-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1154601A true FR1154601A (fr) | 1958-04-14 |
Family
ID=22361554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1154601D Expired FR1154601A (fr) | 1955-07-13 | 1956-07-02 | Commutateur à résistance négative à semi-conducteur |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR1154601A (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1152763B (de) * | 1959-08-05 | 1963-08-14 | Ibm | Halbleiterbauelement mit mindestens einem PN-UEbergang |
| DE1162484B (de) * | 1961-02-08 | 1964-02-06 | Intermetall | Zener-Halbleiterdiode zur Spannungsbegrenzung und Spannungsregelung mit einem aus drei durch pn-UEbergaenge getrennten Zonen bestehenden Halbleiterkoerper und Verfahrenzum Herstellen |
| DE1163461B (de) * | 1958-12-17 | 1964-02-20 | Nippon Electric Co | Flaechentransistor mit einem Konzentrationsgradienten der dotierenden Fremdstoffe ineiner Zone |
-
1956
- 1956-07-02 FR FR1154601D patent/FR1154601A/fr not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1163461B (de) * | 1958-12-17 | 1964-02-20 | Nippon Electric Co | Flaechentransistor mit einem Konzentrationsgradienten der dotierenden Fremdstoffe ineiner Zone |
| DE1152763B (de) * | 1959-08-05 | 1963-08-14 | Ibm | Halbleiterbauelement mit mindestens einem PN-UEbergang |
| DE1152763C2 (de) * | 1959-08-05 | 1964-02-20 | Ibm | Halbleiterbauelement mit mindestens einem PN-UEbergang |
| DE1162484B (de) * | 1961-02-08 | 1964-02-06 | Intermetall | Zener-Halbleiterdiode zur Spannungsbegrenzung und Spannungsregelung mit einem aus drei durch pn-UEbergaenge getrennten Zonen bestehenden Halbleiterkoerper und Verfahrenzum Herstellen |
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