FR1500047A - Détecteur de lumière à semiconducteurs - Google Patents

Détecteur de lumière à semiconducteurs

Info

Publication number
FR1500047A
FR1500047A FR65637A FR65637A FR1500047A FR 1500047 A FR1500047 A FR 1500047A FR 65637 A FR65637 A FR 65637A FR 65637 A FR65637 A FR 65637A FR 1500047 A FR1500047 A FR 1500047A
Authority
FR
France
Prior art keywords
semiconductor light
light detector
detector
semiconductor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR65637A
Other languages
English (en)
Inventor
Jean-Pierre Biet
Jacques Benoit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR65637A priority Critical patent/FR1500047A/fr
Priority to GB24904/67A priority patent/GB1144298A/en
Priority to BE699537D priority patent/BE699537A/xx
Priority to NL6707891A priority patent/NL6707891A/xx
Priority to LU53837D priority patent/LU53837A1/xx
Priority to DE19671589616 priority patent/DE1589616A1/de
Priority to US646224A priority patent/US3452206A/en
Application granted granted Critical
Publication of FR1500047A publication Critical patent/FR1500047A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR65637A 1966-06-15 1966-06-15 Détecteur de lumière à semiconducteurs Expired FR1500047A (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR65637A FR1500047A (fr) 1966-06-15 1966-06-15 Détecteur de lumière à semiconducteurs
GB24904/67A GB1144298A (en) 1966-06-15 1967-05-30 Radiation detector
BE699537D BE699537A (fr) 1966-06-15 1967-06-06
NL6707891A NL6707891A (fr) 1966-06-15 1967-06-07
LU53837D LU53837A1 (fr) 1966-06-15 1967-06-08
DE19671589616 DE1589616A1 (de) 1966-06-15 1967-06-09 Halbleiter-Strahlungsdetektor und Verfahren zu dessen Herstellung
US646224A US3452206A (en) 1966-06-15 1967-06-15 Photo-diode and transistor semiconductor radiation detector with the photodiode biased slightly below its breakdown voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR65637A FR1500047A (fr) 1966-06-15 1966-06-15 Détecteur de lumière à semiconducteurs

Publications (1)

Publication Number Publication Date
FR1500047A true FR1500047A (fr) 1967-11-03

Family

ID=8611041

Family Applications (1)

Application Number Title Priority Date Filing Date
FR65637A Expired FR1500047A (fr) 1966-06-15 1966-06-15 Détecteur de lumière à semiconducteurs

Country Status (7)

Country Link
US (1) US3452206A (fr)
BE (1) BE699537A (fr)
DE (1) DE1589616A1 (fr)
FR (1) FR1500047A (fr)
GB (1) GB1144298A (fr)
LU (1) LU53837A1 (fr)
NL (1) NL6707891A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2018859A1 (fr) * 1968-09-25 1970-06-26 Itt

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1582850A (fr) * 1968-03-29 1969-10-10
US3684933A (en) * 1971-06-21 1972-08-15 Itt Semiconductor device showing at least three successive zones of alternate opposite conductivity type
US3976874A (en) * 1973-06-16 1976-08-24 U.S. Philips Corporation Image tube incorporating a brightness-dependent power supply
FR2252653B1 (fr) * 1973-11-28 1976-10-01 Thomson Csf
SE382507B (sv) * 1974-06-05 1976-02-02 Aga Ab Sett att reglera forsterkningen i en stralningsdetekterande lavindiod.
DE3170600D1 (en) * 1980-09-29 1985-06-27 Ibm Semiconductor integrated circuit optical image-to-electrical signal transducer
US5051789A (en) * 1990-10-11 1991-09-24 The United States Of America As Represented By The United States Department Of Energy Device having two optical ports for switching applications
US11131782B2 (en) 2018-11-12 2021-09-28 Stmicroelectronics (Crolles 2) Sas Ionizing radiation detector

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2745021A (en) * 1951-11-23 1956-05-08 Rca Corp Photo device amplifier circuit
US2779877A (en) * 1955-06-17 1957-01-29 Sprague Electric Co Multiple junction transistor unit
DE1130523B (de) * 1958-01-22 1962-05-30 Siemens Ag Anordnung mit mindestens drei pnp-bzw. npn-Flaechentransistoren
NL250955A (fr) * 1959-08-05
US3378688A (en) * 1965-02-24 1968-04-16 Fairchild Camera Instr Co Photosensitive diode array accessed by a metal oxide switch utilizing overlapping and traveling inversion regions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2018859A1 (fr) * 1968-09-25 1970-06-26 Itt

Also Published As

Publication number Publication date
GB1144298A (en) 1969-03-05
LU53837A1 (fr) 1969-04-22
BE699537A (fr) 1967-12-06
DE1589616A1 (de) 1970-05-21
US3452206A (en) 1969-06-24
NL6707891A (fr) 1967-12-18

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