FR1247196A - Méthode de protection de dispositifs semi-conducteurs - Google Patents

Méthode de protection de dispositifs semi-conducteurs

Info

Publication number
FR1247196A
FR1247196A FR817501A FR817501A FR1247196A FR 1247196 A FR1247196 A FR 1247196A FR 817501 A FR817501 A FR 817501A FR 817501 A FR817501 A FR 817501A FR 1247196 A FR1247196 A FR 1247196A
Authority
FR
France
Prior art keywords
semiconductor device
protection method
device protection
semiconductor
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR817501A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1247196A publication Critical patent/FR1247196A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Micromachines (AREA)
  • Glass Compositions (AREA)
  • Electrodes Of Semiconductors (AREA)
FR817501A 1959-02-09 1960-02-03 Méthode de protection de dispositifs semi-conducteurs Expired FR1247196A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US791934A US3059158A (en) 1959-02-09 1959-02-09 Protected semiconductor device and method of making it

Publications (1)

Publication Number Publication Date
FR1247196A true FR1247196A (fr) 1960-11-25

Family

ID=25155270

Family Applications (1)

Application Number Title Priority Date Filing Date
FR817501A Expired FR1247196A (fr) 1959-02-09 1960-02-03 Méthode de protection de dispositifs semi-conducteurs

Country Status (6)

Country Link
US (1) US3059158A (fr)
BE (1) BE584431A (fr)
DE (1) DE1212220B (fr)
FR (1) FR1247196A (fr)
GB (1) GB944943A (fr)
NL (1) NL244815A (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3435516A (en) * 1959-05-06 1969-04-01 Texas Instruments Inc Semiconductor structure fabrication
NL270369A (fr) * 1961-01-16
FR1319150A (fr) * 1961-04-05 1963-02-22 Gen Electric Perfectionnements aux dispositifs à semi-conducteurs
US3202888A (en) * 1962-02-09 1965-08-24 Hughes Aircraft Co Micro-miniature semiconductor devices
US3213337A (en) * 1962-10-02 1965-10-19 Whittaker Corp Composite ceramic body and method of forming the same
US3217088A (en) * 1962-11-30 1965-11-09 Owens Illinois Glass Co Joining glass members and encapsulation of small electrical components
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
GB1027737A (en) * 1963-05-14 1966-04-27 Nat Res Dev Semiconductor diode construction
DE1230918B (de) * 1964-05-08 1966-12-22 Telefunken Patent Halbleiteranordnung
US3514346A (en) * 1965-08-02 1970-05-26 Gen Electric Semiconductive devices having asymmetrically conductive junction
DE1764096A1 (de) * 1967-04-04 1971-05-27 Marconi Co Ltd Oberflaechen-Feldeffekt-Transistor
US3648121A (en) * 1967-09-06 1972-03-07 Tokyo Shibaura Electric Co A laminated semiconductor structure
US3735208A (en) * 1971-08-26 1973-05-22 Rca Corp Thermal fatigue lead-soldered semiconductor device
US3715636A (en) * 1972-01-03 1973-02-06 Gen Electric Silicon carbide lamp mounted on a ceramic of poor thermal conductivity
JPS49135749U (fr) * 1973-03-24 1974-11-21
JPS52116074A (en) * 1976-03-26 1977-09-29 Hitachi Ltd Electronic part
US4262165A (en) * 1976-03-26 1981-04-14 Hitachi, Ltd. Packaging structure for semiconductor IC chip
DE69318640T2 (de) * 1992-01-27 1998-09-10 Harris Corp Halbleitervorrichtung mit einem halbleitersubstrat und einer keramischen scheibe als decke
CN109467386A (zh) * 2018-01-15 2019-03-15 杭州创屹机电科技有限公司 一种快速固化的3d打印陶瓷浆料及打印方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2874340A (en) * 1953-06-26 1959-02-17 Sprague Electric Co Rectifying contact
US2792539A (en) * 1953-07-07 1957-05-14 Sprague Electric Co Transistor construction
US2736847A (en) * 1954-05-10 1956-02-28 Hughes Aircraft Co Fused-junction silicon diodes
AT193945B (de) * 1955-06-28 1957-12-10 Western Electric Co Verfahren zur Änderung der spezifischen Leitfähigkeit eines Halbleitermaterials
NL101253C (fr) * 1955-09-12
NL213425A (fr) * 1956-01-03
NL217849A (fr) * 1956-06-12
US2959718A (en) * 1957-04-08 1960-11-08 Int Rectifier Corp Rectifier assembly
DE1047949B (de) * 1957-06-24 1958-12-31 Siemens Ag Insbesondere auf Strahlung ansprechende Halbleiterkristallanordnung mit p-n-UEbergang und den p-n-UEbergang gegen Feuchtigkeit schuetzender Huelle
US2946935A (en) * 1958-10-27 1960-07-26 Sarkes Tarzian Diode

Also Published As

Publication number Publication date
DE1212220B (de) 1966-03-10
US3059158A (en) 1962-10-16
NL244815A (fr)
BE584431A (fr)
GB944943A (en) 1963-12-18

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