GB1027737A - Semiconductor diode construction - Google Patents

Semiconductor diode construction

Info

Publication number
GB1027737A
GB1027737A GB19007/63A GB1900763A GB1027737A GB 1027737 A GB1027737 A GB 1027737A GB 19007/63 A GB19007/63 A GB 19007/63A GB 1900763 A GB1900763 A GB 1900763A GB 1027737 A GB1027737 A GB 1027737A
Authority
GB
United Kingdom
Prior art keywords
diode
semi
plates
sector
plated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB19007/63A
Inventor
Ronald Francis Johnston Broom
Colin Harold Gooch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Priority to GB19007/63A priority Critical patent/GB1027737A/en
Priority to FR974385A priority patent/FR1396723A/en
Priority to DEN24975A priority patent/DE1297759B/en
Publication of GB1027737A publication Critical patent/GB1027737A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/02365Fixing laser chips on mounts by clamping

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

1,027,737. Lasers. NATIONAL RESEARCH DEVELOPMENT CORPORATION. May 14, 1964 [May 14, 1963], No. 19007/63. Heading H3B. [Also in Division H1] In a construction in which a semi-conductor diode is mounted between two end plates, a spacer, mounted between the end plates to hold them rigidly, is of a material of a coefficient of expansion similar to that of the diode. A semi-conductor diode 1, Fig. 2 (not shown), of gallium arsenide or phosphide, is mounted between two molybdenum plates 5, 6, the plate 5 being plated with gold and tin for contact with N-type region 2 and plate 6 being plated with gold and zinc for contact with P- type region 3. These plates serve as electrical contacts and are large enough to act as heat sinks. They are further held appropriately spaced by a member 7 of coefficient of expansion similar to that of the device 1 and, to ensure this similarity, the member 7 is preferably made from a semi-insulating form of the same material as the device 1. A sector of the spacer 7 is cut away to allow the passage of radiation emitted and, if desired, a second sector, opposite to the first, may be cut away to permit silvering of the rear face of the diode after the whole device has been assembled.
GB19007/63A 1963-05-14 1963-05-14 Semiconductor diode construction Expired GB1027737A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB19007/63A GB1027737A (en) 1963-05-14 1963-05-14 Semiconductor diode construction
FR974385A FR1396723A (en) 1963-05-14 1964-05-13 Semiconductor diode
DEN24975A DE1297759B (en) 1963-05-14 1964-05-14 Semiconductor diode array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB19007/63A GB1027737A (en) 1963-05-14 1963-05-14 Semiconductor diode construction

Publications (1)

Publication Number Publication Date
GB1027737A true GB1027737A (en) 1966-04-27

Family

ID=10122194

Family Applications (1)

Application Number Title Priority Date Filing Date
GB19007/63A Expired GB1027737A (en) 1963-05-14 1963-05-14 Semiconductor diode construction

Country Status (3)

Country Link
DE (1) DE1297759B (en)
FR (1) FR1396723A (en)
GB (1) GB1027737A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108988119A (en) * 2017-06-01 2018-12-11 英锜科技股份有限公司 Laser optical-mechanical support

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1081835A (en) * 1953-05-05 1954-12-23 Csf Modular light emitting device
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions
US2855334A (en) * 1955-08-17 1958-10-07 Sprague Electric Co Method of preparing semiconducting crystals having symmetrical junctions
BE571550A (en) * 1957-09-27
US3110080A (en) * 1958-01-20 1963-11-12 Westinghouse Electric Corp Rectifier fabrication
BE584431A (en) * 1959-02-09
US3034079A (en) * 1959-05-11 1962-05-08 Microwave Ass Hermetically sealed semiconductors
USRE25632E (en) * 1960-01-11 1964-08-18 Optical maser
FR1313633A (en) * 1961-02-24 1962-12-28 Hughes Aircraft Co Semiconductor devices and their manufacturing process

Also Published As

Publication number Publication date
DE1297759B (en) 1969-06-19
FR1396723A (en) 1965-04-23

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