GB1016776A - Optical maser device - Google Patents
Optical maser deviceInfo
- Publication number
- GB1016776A GB1016776A GB23944/63A GB2394463A GB1016776A GB 1016776 A GB1016776 A GB 1016776A GB 23944/63 A GB23944/63 A GB 23944/63A GB 2394463 A GB2394463 A GB 2394463A GB 1016776 A GB1016776 A GB 1016776A
- Authority
- GB
- United Kingdom
- Prior art keywords
- glass
- semi
- conductor
- lasers
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
- H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
1,016,776. Lasers. NATIONAL RESEARCH DEVELOPMENT CORPORATION. June 12, 1964 [June 17, 1963], No. 23944/63. Heading H3B. A laser using doped glass; as the active medium is] pumped by the output from one or more semi-conductor lasers. The active medium may comprise " Kodial " glass containing neodymium, in the form of a rod 1 having plane reflecting end surfaces 2, 3 one of which is partially transmitting. Optionally one end surface may be inclined for " spoilt Q " operation. Pumping is effected by a plurality of semi-conductor diode lasers 4 secured to the glass surface and provided with electrodes 5, 6 and reflecting surfaces 8, 9, defining optical cavities. A layer 10 of electricallyinsulating material is interposed between each semi-conductor and its reflecting surface 8 when the reflector is metallic. The reflecting surfaces 9 are polished and metallized planes of the glass. The semi-conductor diodes and the glass have the same expansion coefficient and are secured together by glazing the semiconductors on the contacting surface and then pressing the semi-conductors against the glass at a temperature at which the glass surface is molten. Gallium arsenide diodes are used for operation at normal temperatures and diodes formed of an alloy of gallium and indium arsenides are used at a temperature of 77‹ K.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB23944/63A GB1016776A (en) | 1963-06-17 | 1963-06-17 | Optical maser device |
FR978331A FR1398630A (en) | 1963-06-17 | 1964-06-15 | Optical maser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB23944/63A GB1016776A (en) | 1963-06-17 | 1963-06-17 | Optical maser device |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1016776A true GB1016776A (en) | 1966-01-12 |
Family
ID=10203854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB23944/63A Expired GB1016776A (en) | 1963-06-17 | 1963-06-17 | Optical maser device |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR1398630A (en) |
GB (1) | GB1016776A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2241109A (en) * | 1990-01-19 | 1991-08-21 | Mitsubishi Electric Corp | A semiconductor-laser-pumped, solid-state laser |
DE4008225A1 (en) * | 1990-03-15 | 1991-09-19 | Messerschmitt Boelkow Blohm | Laser diode pumped solid state laser - has resonator divided into number of volumes using number of pumping diodes |
US5257277A (en) * | 1990-01-19 | 1993-10-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor-laser-pumped, solid-state laser |
-
1963
- 1963-06-17 GB GB23944/63A patent/GB1016776A/en not_active Expired
-
1964
- 1964-06-15 FR FR978331A patent/FR1398630A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2241109A (en) * | 1990-01-19 | 1991-08-21 | Mitsubishi Electric Corp | A semiconductor-laser-pumped, solid-state laser |
US5159605A (en) * | 1990-01-19 | 1992-10-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor-laser-pumped, solid-state laser |
US5257277A (en) * | 1990-01-19 | 1993-10-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor-laser-pumped, solid-state laser |
GB2241109B (en) * | 1990-01-19 | 1994-09-14 | Mitsubishi Electric Corp | A semiconductor-laser-pumped,solid-state laser |
DE4008225A1 (en) * | 1990-03-15 | 1991-09-19 | Messerschmitt Boelkow Blohm | Laser diode pumped solid state laser - has resonator divided into number of volumes using number of pumping diodes |
Also Published As
Publication number | Publication date |
---|---|
FR1398630A (en) | 1965-05-07 |
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