GB1010241A - Optical maser device - Google Patents

Optical maser device

Info

Publication number
GB1010241A
GB1010241A GB2627363A GB2627363A GB1010241A GB 1010241 A GB1010241 A GB 1010241A GB 2627363 A GB2627363 A GB 2627363A GB 2627363 A GB2627363 A GB 2627363A GB 1010241 A GB1010241 A GB 1010241A
Authority
GB
United Kingdom
Prior art keywords
diode
mirrors
mirror
plane
path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2627363A
Inventor
Percy George Robert King
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Priority to GB2627363A priority Critical patent/GB1010241A/en
Publication of GB1010241A publication Critical patent/GB1010241A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

1,010,241. Lasers. NATIONAL RESEARCH DEVELOPMENT CORPORATION. June 12, 1964 [July 2, 1963], No. 26273/63. Heading H3B. In a semi-conductor diode laser the diode 1 is positioned between a pair of mirrors M 1 , M 2 spaced apart from the diode and aligned so that a multiple reflection path 4 for emitted radiation extends between the mirrors and through the diode, which path is incident from each mirror on to the diode at the Brewster angle # B to the normals at the diode faces. The mirrors M 1 , M 2 may be planar or concave. In the arrangement of Fig. 2 (not shown), the diode is arranged to have a trapezium shape with the two radiation emitting surfaces 2, 3 inclined to each other at an included angle of (180 degrees- 2 # B ). In both embodiments the plane of the gallium arsenide diode junction is parallel to the plane of the paper in the Figure. By control of the reflection characteristics of the external mirrors oscillation threshold and output coupling efficiency can be adjusted, and the space between the diode and the mirror can be used for modulation systems.
GB2627363A 1963-07-02 1963-07-02 Optical maser device Expired GB1010241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2627363A GB1010241A (en) 1963-07-02 1963-07-02 Optical maser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2627363A GB1010241A (en) 1963-07-02 1963-07-02 Optical maser device

Publications (1)

Publication Number Publication Date
GB1010241A true GB1010241A (en) 1965-11-17

Family

ID=10241053

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2627363A Expired GB1010241A (en) 1963-07-02 1963-07-02 Optical maser device

Country Status (1)

Country Link
GB (1) GB1010241A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0263690A2 (en) * 1986-10-08 1988-04-13 Sharp Kabushiki Kaisha A distributed feedback semiconductor laser device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0263690A2 (en) * 1986-10-08 1988-04-13 Sharp Kabushiki Kaisha A distributed feedback semiconductor laser device
EP0263690A3 (en) * 1986-10-08 1989-04-05 Sharp Kabushiki Kaisha A distributed feedback semiconductor laser device
US4849985A (en) * 1986-10-08 1989-07-18 Sharp Kabushiki Kaisha Distributed feedback semiconductor laser device

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