GB1016464A - Improvements in or relating to semiconductor devices for amplification or productionof microwave or light radiation - Google Patents
Improvements in or relating to semiconductor devices for amplification or productionof microwave or light radiationInfo
- Publication number
- GB1016464A GB1016464A GB766264A GB766264A GB1016464A GB 1016464 A GB1016464 A GB 1016464A GB 766264 A GB766264 A GB 766264A GB 766264 A GB766264 A GB 766264A GB 1016464 A GB1016464 A GB 1016464A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- semi
- conductor
- gallium
- phosphide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000005855 radiation Effects 0.000 title abstract 2
- 230000003321 amplification Effects 0.000 title 1
- 238000003199 nucleic acid amplification method Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 7
- 239000006187 pill Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 241000931526 Acer campestre Species 0.000 abstract 1
- 239000005952 Aluminium phosphide Substances 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 239000005864 Sulphur Substances 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910001297 Zn alloy Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- PPNXXZIBFHTHDM-UHFFFAOYSA-N aluminium phosphide Chemical compound P#[Al] PPNXXZIBFHTHDM-UHFFFAOYSA-N 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 239000011135 tin Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Discharge Lamps And Accessories Thereof (AREA)
- Luminescent Compositions (AREA)
Abstract
<PICT:1016464/C4-C5/1> In a semi-conductor device in which emission, of radiation is stimulated by charge carrier injection at a P-N junction in a semi-conductor crystal, the crystal is a mixed crystal composed of at least two semi-conductor substances in such proportions that the energy maximum in the valence band occurs at the same value of wave number vector as the energy minimum in the conduction band. The crystal may be employed in an electroluminescent lamp or as a laser or maser. In the lamp illustrated the crystal 2 is mounted in the platinum plate 3 which also carries a lens 8, and a ceramic spacer 4 carries a metal plate 5 with a lead 6 to the alloying pill 7; the crystal is of gallium phosphide and gallium arsenide, less than 10 m thick, and the pill an indium-zinc alloy. Other crystal components mentioned are gallium antimonide, indium phosphide, arsenide and antimonide, and aluminium phosphide, while silicon, tin, sulphur, selenium or tellurium may be used as doping agents.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES83893A DE1194976B (en) | 1963-02-25 | 1963-02-25 | Semiconductor diode recombination emitters for the optical sector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1016464A true GB1016464A (en) | 1966-01-12 |
Family
ID=7511336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB766264A Expired GB1016464A (en) | 1963-02-25 | 1964-02-24 | Improvements in or relating to semiconductor devices for amplification or productionof microwave or light radiation |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1194976B (en) |
| GB (1) | GB1016464A (en) |
| NL (1) | NL6401460A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1276817B (en) * | 1966-02-15 | 1968-09-05 | Siemens Ag | Semiconductor light emitting diode with very high luminous efficacy |
-
1963
- 1963-02-25 DE DES83893A patent/DE1194976B/en active Pending
-
1964
- 1964-02-18 NL NL6401460A patent/NL6401460A/xx unknown
- 1964-02-24 GB GB766264A patent/GB1016464A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL6401460A (en) | 1964-08-26 |
| DE1194976B (en) | 1965-06-16 |
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