GB1016464A - Improvements in or relating to semiconductor devices for amplification or productionof microwave or light radiation - Google Patents

Improvements in or relating to semiconductor devices for amplification or productionof microwave or light radiation

Info

Publication number
GB1016464A
GB1016464A GB766264A GB766264A GB1016464A GB 1016464 A GB1016464 A GB 1016464A GB 766264 A GB766264 A GB 766264A GB 766264 A GB766264 A GB 766264A GB 1016464 A GB1016464 A GB 1016464A
Authority
GB
United Kingdom
Prior art keywords
crystal
semi
conductor
gallium
phosphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB766264A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB1016464A publication Critical patent/GB1016464A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Luminescent Compositions (AREA)

Abstract

<PICT:1016464/C4-C5/1> In a semi-conductor device in which emission, of radiation is stimulated by charge carrier injection at a P-N junction in a semi-conductor crystal, the crystal is a mixed crystal composed of at least two semi-conductor substances in such proportions that the energy maximum in the valence band occurs at the same value of wave number vector as the energy minimum in the conduction band. The crystal may be employed in an electroluminescent lamp or as a laser or maser. In the lamp illustrated the crystal 2 is mounted in the platinum plate 3 which also carries a lens 8, and a ceramic spacer 4 carries a metal plate 5 with a lead 6 to the alloying pill 7; the crystal is of gallium phosphide and gallium arsenide, less than 10 m thick, and the pill an indium-zinc alloy. Other crystal components mentioned are gallium antimonide, indium phosphide, arsenide and antimonide, and aluminium phosphide, while silicon, tin, sulphur, selenium or tellurium may be used as doping agents.
GB766264A 1963-02-25 1964-02-24 Improvements in or relating to semiconductor devices for amplification or productionof microwave or light radiation Expired GB1016464A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES83893A DE1194976B (en) 1963-02-25 1963-02-25 Semiconductor diode recombination emitters for the optical sector

Publications (1)

Publication Number Publication Date
GB1016464A true GB1016464A (en) 1966-01-12

Family

ID=7511336

Family Applications (1)

Application Number Title Priority Date Filing Date
GB766264A Expired GB1016464A (en) 1963-02-25 1964-02-24 Improvements in or relating to semiconductor devices for amplification or productionof microwave or light radiation

Country Status (3)

Country Link
DE (1) DE1194976B (en)
GB (1) GB1016464A (en)
NL (1) NL6401460A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1276817B (en) * 1966-02-15 1968-09-05 Siemens Ag Semiconductor light emitting diode with very high luminous efficacy

Also Published As

Publication number Publication date
NL6401460A (en) 1964-08-26
DE1194976B (en) 1965-06-16

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