GB1092448A - Solid state voltage tunable oscillator - Google Patents

Solid state voltage tunable oscillator

Info

Publication number
GB1092448A
GB1092448A GB10812/66A GB1081266A GB1092448A GB 1092448 A GB1092448 A GB 1092448A GB 10812/66 A GB10812/66 A GB 10812/66A GB 1081266 A GB1081266 A GB 1081266A GB 1092448 A GB1092448 A GB 1092448A
Authority
GB
United Kingdom
Prior art keywords
voltage
semi
tunable oscillator
gunn effect
solid state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10812/66A
Inventor
John Stuart Heeks
George King
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB10812/66A priority Critical patent/GB1092448A/en
Publication of GB1092448A publication Critical patent/GB1092448A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

1,092,448. Gunn effect devices. STANDARD TELEPHONES & CABLES Ltd. March 11, 1966, No. 10812/66. Heading H1K. A voltage tunable oscillator consists of a variable voltage source and a semi-conductor body capable of exhibiting Gunn effect. The body is so shaped or doped that the resistance per unit length varies, preferably linearly, along a current path between electrodes disposed at its ends. Typically the body is of N-type gallium arsenide or indium phosphide formed as an epitaxial layer on a semi-insulating substrate of the same material. Tin electrodes are formed on it by vapour deposition followed by alloying in a reducing atmosphere with a flux. The frequency of the oscillations, which are non-sinusoidal, decreases as the applied voltage increases to move the point of generation of each pulse towards the output electrode. The voltage may be continuously applied or pulsed to reduce power dissipation.
GB10812/66A 1966-03-11 1966-03-11 Solid state voltage tunable oscillator Expired GB1092448A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB10812/66A GB1092448A (en) 1966-03-11 1966-03-11 Solid state voltage tunable oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB10812/66A GB1092448A (en) 1966-03-11 1966-03-11 Solid state voltage tunable oscillator

Publications (1)

Publication Number Publication Date
GB1092448A true GB1092448A (en) 1967-11-22

Family

ID=9974733

Family Applications (1)

Application Number Title Priority Date Filing Date
GB10812/66A Expired GB1092448A (en) 1966-03-11 1966-03-11 Solid state voltage tunable oscillator

Country Status (1)

Country Link
GB (1) GB1092448A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535601A (en) * 1967-07-31 1970-10-20 Nippon Electric Co Frequency-selective semiconductor oscillation device
FR2033299A1 (en) * 1969-02-06 1970-12-04 United Aircraft Corp

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535601A (en) * 1967-07-31 1970-10-20 Nippon Electric Co Frequency-selective semiconductor oscillation device
FR2033299A1 (en) * 1969-02-06 1970-12-04 United Aircraft Corp

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