GB1120574A - Semiconductive circuit arrangement - Google Patents

Semiconductive circuit arrangement

Info

Publication number
GB1120574A
GB1120574A GB28873/66A GB2887366A GB1120574A GB 1120574 A GB1120574 A GB 1120574A GB 28873/66 A GB28873/66 A GB 28873/66A GB 2887366 A GB2887366 A GB 2887366A GB 1120574 A GB1120574 A GB 1120574A
Authority
GB
United Kingdom
Prior art keywords
gallium arsenide
film
domain
cadmium sulphide
along
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28873/66A
Inventor
Carl Peter Sandbank
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB28873/66A priority Critical patent/GB1120574A/en
Priority to DE19671512185 priority patent/DE1512185A1/en
Priority to FR112272A priority patent/FR1529358A/en
Priority to NL6708972A priority patent/NL6708972A/xx
Publication of GB1120574A publication Critical patent/GB1120574A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/103—Gunn-effect devices controlled by electromagnetic radiation

Abstract

1,120,574. Photo-electric waveform generator. STANDARD TELEPHONES & CABLES Ltd. June 28, 1966, No. 28873/66. Heading G1A. [Also in Division H1] A semi-conductor circuit arrangement comprises a photo-conductive body which exhibits Gunn or other high electric field instability effects and means for applying a radiation beam of varied intensity along the body to provide a variable conductivity profile therealong so that a modulated output current is provided as the high field domain traverses the body. The arrangement is said to be suitable for Gunn effect materials, such as gallium arsenide or indium phosphide, Piezo-electric materials such as cadmium sulphide in which the effect is due to interaction between drifting electrons and acoustic phonons or germanium in which slow moving domains can be obtained due to field dependent mobilities and trapping. The body may be continuously biased above the threshold voltage so that a continuous train of domain pulses is provided, or biased just below threshold voltage so that a trigger pulse, or train of trigger pulses provided by an oscillation, may also be applied to provide a single domain pulse or series of single domain pulses corresponding to the oscillations. The embodiments include an epitaxial gallium arsenide layer on a high resistivity gallium arsenide substrate or cadmium sulphide in the form of a solid body or a film on a glass substrate. End ohmic contacts may be provided by deposition and alloying of tin. Fig. 3 shows an optical system for projecting a beam of light along the length of gallium arsenide or cadmium sulphide body 1, the intensity across the width of the beam corresponding to transmission through a strip of film 10. The conductivity profile along body 1 is thus modified so that modulated output current appears across resistor 3 when the domain travels along the body. The applied bias for producing the domains may exceed threshold value either continuously or only when triggered. A further lens may be provided if the body length is less than the film width, or the body may be placed directly adjacent the film.
GB28873/66A 1966-06-28 1966-06-28 Semiconductive circuit arrangement Expired GB1120574A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB28873/66A GB1120574A (en) 1966-06-28 1966-06-28 Semiconductive circuit arrangement
DE19671512185 DE1512185A1 (en) 1966-06-28 1967-06-21 Solid body arrangement for optical scanning
FR112272A FR1529358A (en) 1966-06-28 1967-06-28 Semiconductor analyzer device
NL6708972A NL6708972A (en) 1966-06-28 1967-06-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB28873/66A GB1120574A (en) 1966-06-28 1966-06-28 Semiconductive circuit arrangement

Publications (1)

Publication Number Publication Date
GB1120574A true GB1120574A (en) 1968-07-17

Family

ID=10282544

Family Applications (1)

Application Number Title Priority Date Filing Date
GB28873/66A Expired GB1120574A (en) 1966-06-28 1966-06-28 Semiconductive circuit arrangement

Country Status (3)

Country Link
DE (1) DE1512185A1 (en)
GB (1) GB1120574A (en)
NL (1) NL6708972A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505551A (en) * 1977-03-10 1985-03-19 Transamerica Delaval Inc. Illumination and light gate utilization methods and apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505551A (en) * 1977-03-10 1985-03-19 Transamerica Delaval Inc. Illumination and light gate utilization methods and apparatus

Also Published As

Publication number Publication date
DE1512185A1 (en) 1969-06-26
NL6708972A (en) 1967-12-29

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