FR1233332A - Procédé de fabrication d'un semi-conducteur à base de silicium - Google Patents

Procédé de fabrication d'un semi-conducteur à base de silicium

Info

Publication number
FR1233332A
FR1233332A FR802976A FR802976A FR1233332A FR 1233332 A FR1233332 A FR 1233332A FR 802976 A FR802976 A FR 802976A FR 802976 A FR802976 A FR 802976A FR 1233332 A FR1233332 A FR 1233332A
Authority
FR
France
Prior art keywords
silicon
manufacturing process
based semiconductor
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR802976A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1233332A publication Critical patent/FR1233332A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/0133—Ternary Alloys
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR802976A 1958-09-30 1959-08-17 Procédé de fabrication d'un semi-conducteur à base de silicium Expired FR1233332A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES60096A DE1110321B (de) 1958-09-30 1958-09-30 Legierungsverfahren zur Herstellung einer Halbleiteranordnung mit einem Siliziumkoerper

Publications (1)

Publication Number Publication Date
FR1233332A true FR1233332A (fr) 1960-10-12

Family

ID=7493849

Family Applications (1)

Application Number Title Priority Date Filing Date
FR802976A Expired FR1233332A (fr) 1958-09-30 1959-08-17 Procédé de fabrication d'un semi-conducteur à base de silicium

Country Status (6)

Country Link
BE (1) BE583120A (de)
CH (1) CH372385A (de)
DE (1) DE1110321B (de)
FR (1) FR1233332A (de)
GB (1) GB914260A (de)
NL (1) NL242265A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1172378B (de) * 1961-07-14 1964-06-18 Siemens Ag Verfahren zur Herstellung einer elektrisch unsymmetrisch leitenden Halbleiteranordnung

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1295697B (de) * 1962-05-23 1969-05-22 Walter Brandt Gmbh Halbleiterbauelement und Verfahren zu seiner Herstellung
US3200490A (en) * 1962-12-07 1965-08-17 Philco Corp Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials
GB1025453A (en) * 1964-01-29 1966-04-06 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL190331A (de) * 1954-08-26 1900-01-01
BE547698A (de) * 1955-05-10 1900-01-01

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1172378B (de) * 1961-07-14 1964-06-18 Siemens Ag Verfahren zur Herstellung einer elektrisch unsymmetrisch leitenden Halbleiteranordnung

Also Published As

Publication number Publication date
CH372385A (de) 1963-10-15
GB914260A (en) 1963-01-02
BE583120A (fr) 1960-03-29
DE1110321B (de) 1961-07-06
NL242265A (de) 1900-01-01

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