FI931840A0 - Foerfarande foer att odla ett flertal enskilda kristaller och en vid foerfarande anvaend anordning - Google Patents

Foerfarande foer att odla ett flertal enskilda kristaller och en vid foerfarande anvaend anordning

Info

Publication number
FI931840A0
FI931840A0 FI931840A FI931840A FI931840A0 FI 931840 A0 FI931840 A0 FI 931840A0 FI 931840 A FI931840 A FI 931840A FI 931840 A FI931840 A FI 931840A FI 931840 A0 FI931840 A0 FI 931840A0
Authority
FI
Finland
Prior art keywords
foerfarande
kristaller
enskilda
odla
anvaend
Prior art date
Application number
FI931840A
Other languages
English (en)
Other versions
FI931840A (fi
Inventor
John D Holder
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of FI931840A0 publication Critical patent/FI931840A0/fi
Publication of FI931840A publication Critical patent/FI931840A/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
FI931840A 1992-04-24 1993-04-23 Foerfarande foer att odla ett flertal enskilda kristaller och en vid foerfarande anvaend anordning FI931840A (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/873,375 US5288366A (en) 1992-04-24 1992-04-24 Method for growing multiple single crystals and apparatus for use therein

Publications (2)

Publication Number Publication Date
FI931840A0 true FI931840A0 (fi) 1993-04-23
FI931840A FI931840A (fi) 1993-10-25

Family

ID=25361519

Family Applications (1)

Application Number Title Priority Date Filing Date
FI931840A FI931840A (fi) 1992-04-24 1993-04-23 Foerfarande foer att odla ett flertal enskilda kristaller och en vid foerfarande anvaend anordning

Country Status (11)

Country Link
US (2) US5288366A (fi)
EP (1) EP0567008B1 (fi)
JP (1) JP2730843B2 (fi)
KR (1) KR0126239B1 (fi)
CN (1) CN1032318C (fi)
CZ (1) CZ71893A3 (fi)
DE (1) DE59309810D1 (fi)
FI (1) FI931840A (fi)
MY (1) MY107784A (fi)
SG (1) SG44746A1 (fi)
TW (1) TW303394B (fi)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113430638A (zh) * 2021-06-19 2021-09-24 连城凯克斯科技有限公司 用于长晶炉的溶液移除装置及其移除方法、长晶炉和溶液移除方法

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US5488924A (en) * 1993-12-06 1996-02-06 Memc Electronic Materials Hopper for use in charging semiconductor source material
US5582642A (en) * 1995-06-20 1996-12-10 Memc Electronic Materials, Inc. Apparatus and method for adjusting the position of a pull wire of a crystal pulling machine
US5676751A (en) * 1996-01-22 1997-10-14 Memc Electronic Materials, Inc. Rapid cooling of CZ silicon crystal growth system
US6019838A (en) * 1998-01-05 2000-02-01 Memc Electronic Materials, Inc. Crystal growing apparatus with melt-doping facility
FR2808809B1 (fr) * 2000-05-11 2003-06-27 Emix Installation de fabrication en continu de barreau de silicium multicristallin
KR100642923B1 (ko) * 2002-06-18 2006-11-03 도요탄소 가부시키가이샤 가요성을 갖는 고순도 팽창 흑연시트와 그 제조방법, 및상기 시트를 이용한 카본 도가니의 내층
US7635414B2 (en) * 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
WO2005111276A1 (ja) * 2004-05-19 2005-11-24 Siltronic Japan Corporation 単結晶の育成方法及び繊維成形体
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
DE102005024957A1 (de) * 2005-05-31 2006-12-07 Saint-Gobain Industriekeramik Rödental GmbH Mehrteiliger, dünnwandiger Tiegel mit Einlage aus Quarzglasgewebe oder Quarzglasfilz zum Abkühlen von Si-Schmelzen
DE102006050901A1 (de) * 2005-11-17 2007-05-31 Solarworld Industries Deutschland Gmbh Verfahren zum Herstellen eines Halbleiterkörpers und zum Herstellen einer Halbleitervorrichtung
JP5337641B2 (ja) * 2009-09-07 2013-11-06 三菱マテリアルテクノ株式会社 残存シリコン融液の除去方法、単結晶シリコンの製造方法、単結晶シリコンの製造装置
KR101841032B1 (ko) 2010-09-03 2018-03-22 지티에이티 아이피 홀딩 엘엘씨 갈륨, 인듐 또는 알루미늄으로 도핑된 실리콘 단결정
JP2014511146A (ja) * 2011-04-14 2014-05-12 ジーティー アドヴァンスト シーズィー， エルエルシー 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置
CN102618918B (zh) * 2012-03-13 2015-05-06 杭州奔博科技有限公司 一种坩埚吊装装置
CN104726931A (zh) * 2015-03-30 2015-06-24 江苏盎华光伏工程技术研究中心有限公司 具有退火装置的单晶炉及其控制方法
US10519564B2 (en) 2016-09-29 2019-12-31 Corner Star Llmited Telescoping expansion bellows
US20180087181A1 (en) * 2016-09-29 2018-03-29 Corner Star Limited Expansion bellows with self-aligned guide rods
JP6919633B2 (ja) * 2018-08-29 2021-08-18 信越半導体株式会社 単結晶育成方法
CN112342612A (zh) * 2020-09-17 2021-02-09 徐州晶睿半导体装备科技有限公司 用于单晶炉的液体吸取装置和液体吸取装置的控制方法
CN114250502A (zh) * 2020-09-23 2022-03-29 内蒙古中环协鑫光伏材料有限公司 一种单晶拉制工艺方法
CN114481296A (zh) * 2021-12-23 2022-05-13 江苏协鑫硅材料科技发展有限公司 多次加料直拉单晶生产方法、取料装置
CN114892145B (zh) * 2022-06-01 2022-12-23 宁夏中晶新材料科技有限公司 一种提高化学气相沉积效率的方法及设备

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JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113430638A (zh) * 2021-06-19 2021-09-24 连城凯克斯科技有限公司 用于长晶炉的溶液移除装置及其移除方法、长晶炉和溶液移除方法

Also Published As

Publication number Publication date
CN1032318C (zh) 1996-07-17
TW303394B (fi) 1997-04-21
US5288366A (en) 1994-02-22
JPH0672792A (ja) 1994-03-15
FI931840A (fi) 1993-10-25
EP0567008A2 (de) 1993-10-27
MY107784A (en) 1996-06-15
SG44746A1 (en) 1997-12-19
JP2730843B2 (ja) 1998-03-25
DE59309810D1 (de) 1999-11-11
KR930021836A (ko) 1993-11-23
US5373807A (en) 1994-12-20
KR0126239B1 (ko) 1997-12-19
EP0567008B1 (de) 1999-10-06
EP0567008A3 (de) 1995-04-26
CZ71893A3 (en) 1994-03-16
CN1094461A (zh) 1994-11-02

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