FI921161A0 - Elektrisk matningskrets speciellt foer apd-dioder. - Google Patents

Elektrisk matningskrets speciellt foer apd-dioder.

Info

Publication number
FI921161A0
FI921161A0 FI921161A FI921161A FI921161A0 FI 921161 A0 FI921161 A0 FI 921161A0 FI 921161 A FI921161 A FI 921161A FI 921161 A FI921161 A FI 921161A FI 921161 A0 FI921161 A0 FI 921161A0
Authority
FI
Finland
Prior art keywords
voltage
temperature
matningskrets
elektrisk
dioder
Prior art date
Application number
FI921161A
Other languages
English (en)
Other versions
FI104451B (fi
FI921161A (fi
Inventor
Han Hiong Tan
Original Assignee
Nederland Ptt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nederland Ptt filed Critical Nederland Ptt
Publication of FI921161A0 publication Critical patent/FI921161A0/fi
Publication of FI921161A publication Critical patent/FI921161A/fi
Application granted granted Critical
Publication of FI104451B publication Critical patent/FI104451B/fi

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02016Circuit arrangements of general character for the devices
    • H01L31/02019Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/087Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Optical Communication System (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Pens And Brushes (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Gyroscopes (AREA)
  • Control Of El Displays (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Networks Using Active Elements (AREA)
FI921161A 1991-03-18 1992-03-18 Sähköinen syöttöpiiri erityisesti APD-diodeja varten FI104451B (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL9100476 1991-03-18
NL9100476A NL9100476A (nl) 1991-03-18 1991-03-18 Electrische voedingsschakeling, in het bijzonder voor apds.

Publications (3)

Publication Number Publication Date
FI921161A0 true FI921161A0 (fi) 1992-03-18
FI921161A FI921161A (fi) 1992-09-19
FI104451B FI104451B (fi) 2000-01-31

Family

ID=19859030

Family Applications (1)

Application Number Title Priority Date Filing Date
FI921161A FI104451B (fi) 1991-03-18 1992-03-18 Sähköinen syöttöpiiri erityisesti APD-diodeja varten

Country Status (7)

Country Link
EP (1) EP0504974B1 (fi)
JP (1) JP2821829B2 (fi)
AT (1) ATE127619T1 (fi)
DE (1) DE69204508T2 (fi)
FI (1) FI104451B (fi)
NL (1) NL9100476A (fi)
NO (1) NO303609B1 (fi)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69739284D1 (de) 1997-11-05 2009-04-16 St Microelectronics Srl Temperaturkorrelierter Spannungsgeneratorschaltkreis und zugehöriger Spannungsregler für die Speisung einer Speicherzelle mit einer einzigen Stromversorgung, insbesondere vom FLASH-Typ
US7405552B2 (en) 2006-01-04 2008-07-29 Micron Technology, Inc. Semiconductor temperature sensor with high sensitivity
JP2006303524A (ja) * 2006-06-08 2006-11-02 Oki Comtec Ltd アバランシェフォトダイオード用バイアス電圧制御回路およびその調整方法
CN115542229B (zh) * 2022-11-25 2023-03-24 中国兵器装备集团自动化研究所有限公司 一种复杂温度环境下恒流源校准系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163737A (ja) * 1985-01-14 1986-07-24 Matsushita Electric Ind Co Ltd 光伝送装置
JPS639164A (ja) * 1986-06-30 1988-01-14 Fujitsu Ltd Apdの増倍率制限回路
DE3640242A1 (de) * 1986-11-25 1988-05-26 Vdo Schindling Schaltungsanordnung fuer einen sensor
JP2733763B2 (ja) * 1987-01-30 1998-03-30 日本電信電話株式会社 Apdバイアス回路
JPH02113640A (ja) * 1988-10-21 1990-04-25 Toshiba Corp 自動利得制御装置
JPH0314244A (ja) * 1989-06-13 1991-01-22 Toshiba Corp 電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
NO303609B1 (no) 1998-08-03
EP0504974A1 (en) 1992-09-23
NO920844D0 (no) 1992-03-04
FI104451B (fi) 2000-01-31
EP0504974B1 (en) 1995-09-06
DE69204508T2 (de) 1996-03-14
NL9100476A (nl) 1992-10-16
NO920844L (no) 1992-09-21
FI921161A (fi) 1992-09-19
DE69204508D1 (de) 1995-10-12
JP2821829B2 (ja) 1998-11-05
ATE127619T1 (de) 1995-09-15
JPH07183559A (ja) 1995-07-21

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