FI83721C - Dopningsfoerfarande - Google Patents

Dopningsfoerfarande Download PDF

Info

Publication number
FI83721C
FI83721C FI894534A FI894534A FI83721C FI 83721 C FI83721 C FI 83721C FI 894534 A FI894534 A FI 894534A FI 894534 A FI894534 A FI 894534A FI 83721 C FI83721 C FI 83721C
Authority
FI
Finland
Prior art keywords
manganese
zinc
compound
thin film
sulfide
Prior art date
Application number
FI894534A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI894534A0 (fi
FI83721B (fi
Inventor
Jaakko Antero Hyvaerinen
Original Assignee
Episystems Oy Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Episystems Oy Ltd filed Critical Episystems Oy Ltd
Priority to FI894534A priority Critical patent/FI83721C/fi
Publication of FI894534A0 publication Critical patent/FI894534A0/fi
Priority to DE19904091748 priority patent/DE4091748T/de
Priority to JP2512608A priority patent/JPH05500385A/ja
Priority to PCT/FI1990/000218 priority patent/WO1991005028A1/en
Priority to FR909011754A priority patent/FR2652358B1/fr
Application granted granted Critical
Publication of FI83721B publication Critical patent/FI83721B/fi
Priority to GB9205180A priority patent/GB2252450B/en
Publication of FI83721C publication Critical patent/FI83721C/fi

Links

Classifications

    • H10P14/24—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • H10P14/3428—
    • H10P14/3446—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
  • Luminescent Compositions (AREA)
FI894534A 1989-09-26 1989-09-26 Dopningsfoerfarande FI83721C (fi)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FI894534A FI83721C (fi) 1989-09-26 1989-09-26 Dopningsfoerfarande
DE19904091748 DE4091748T (enExample) 1989-09-26 1990-09-17
JP2512608A JPH05500385A (ja) 1989-09-26 1990-09-17 ドーピング方法
PCT/FI1990/000218 WO1991005028A1 (en) 1989-09-26 1990-09-17 Doping method
FR909011754A FR2652358B1 (fr) 1989-09-26 1990-09-24 Methode de dopage d'une couche de sulfure de zinc.
GB9205180A GB2252450B (en) 1989-09-26 1992-03-10 Doping method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI894534 1989-09-26
FI894534A FI83721C (fi) 1989-09-26 1989-09-26 Dopningsfoerfarande

Publications (3)

Publication Number Publication Date
FI894534A0 FI894534A0 (fi) 1989-09-26
FI83721B FI83721B (fi) 1991-04-30
FI83721C true FI83721C (fi) 1993-11-22

Family

ID=8529054

Family Applications (1)

Application Number Title Priority Date Filing Date
FI894534A FI83721C (fi) 1989-09-26 1989-09-26 Dopningsfoerfarande

Country Status (6)

Country Link
JP (1) JPH05500385A (enExample)
DE (1) DE4091748T (enExample)
FI (1) FI83721C (enExample)
FR (1) FR2652358B1 (enExample)
GB (1) GB2252450B (enExample)
WO (1) WO1991005028A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103897692A (zh) * 2014-03-31 2014-07-02 中国科学院上海光学精密机械研究所 过渡金属离子浓度渐变掺杂硫化锌或硒化锌及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS554794B2 (enExample) * 1973-07-31 1980-01-31
GB2047462B (en) * 1979-04-20 1983-04-20 Thomas J Method of manufacturing thin film electroluminescent devices
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
JPS58157886A (ja) * 1982-03-16 1983-09-20 Matsushita Electric Ind Co Ltd 螢光体薄膜の製造方法
JPS6287487A (ja) * 1985-10-14 1987-04-21 Sharp Corp 不純物ド−プ単結晶形成方法

Also Published As

Publication number Publication date
FR2652358B1 (fr) 1993-09-03
GB2252450A (en) 1992-08-05
JPH05500385A (ja) 1993-01-28
FI894534A0 (fi) 1989-09-26
FR2652358A1 (fr) 1991-03-29
DE4091748T (enExample) 1992-08-27
WO1991005028A1 (en) 1991-04-18
FI83721B (fi) 1991-04-30
GB9205180D0 (en) 1992-05-13
GB2252450B (en) 1993-01-20

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Owner name: EPISYSTEMS OY LTD