FI83721C - Dopningsfoerfarande - Google Patents
Dopningsfoerfarande Download PDFInfo
- Publication number
- FI83721C FI83721C FI894534A FI894534A FI83721C FI 83721 C FI83721 C FI 83721C FI 894534 A FI894534 A FI 894534A FI 894534 A FI894534 A FI 894534A FI 83721 C FI83721 C FI 83721C
- Authority
- FI
- Finland
- Prior art keywords
- manganese
- zinc
- compound
- thin film
- sulfide
- Prior art date
Links
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical group [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 36
- 239000005083 Zinc sulfide Substances 0.000 claims description 34
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 31
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 26
- 229910052748 manganese Inorganic materials 0.000 claims description 26
- 239000011572 manganese Substances 0.000 claims description 26
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 22
- 235000005074 zinc chloride Nutrition 0.000 claims description 18
- 239000011592 zinc chloride Substances 0.000 claims description 18
- 150000002697 manganese compounds Chemical class 0.000 claims description 17
- 150000003752 zinc compounds Chemical class 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 13
- 229910021380 Manganese Chloride Inorganic materials 0.000 claims description 7
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical group Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 claims description 7
- 235000002867 manganese chloride Nutrition 0.000 claims description 7
- 239000011565 manganese chloride Substances 0.000 claims description 7
- 229940099607 manganese chloride Drugs 0.000 claims description 6
- GSDLWVWZLHUANO-UHFFFAOYSA-N zinc;manganese(2+);disulfide Chemical compound [S-2].[S-2].[Mn+2].[Zn+2] GSDLWVWZLHUANO-UHFFFAOYSA-N 0.000 claims description 5
- CADICXFYUNYKGD-UHFFFAOYSA-N sulfanylidenemanganese Chemical compound [Mn]=S CADICXFYUNYKGD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Chemical group BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Chemical group 0.000 claims description 2
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- 238000003877 atomic layer epitaxy Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 3
- 229910000914 Mn alloy Inorganic materials 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- -1 e.g. Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- QENJVNXEZBCGRX-UHFFFAOYSA-L [Cl-].[Mn+2].[Cl-].[Zn+2] Chemical compound [Cl-].[Mn+2].[Cl-].[Zn+2] QENJVNXEZBCGRX-UHFFFAOYSA-L 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- NNRDVGLWZMOXAQ-UHFFFAOYSA-L zinc sulfane dichloride Chemical compound [Cl-].[Zn+2].S.[Cl-] NNRDVGLWZMOXAQ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
- Luminescent Compositions (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI894534A FI83721C (fi) | 1989-09-26 | 1989-09-26 | Dopningsfoerfarande |
| DE19904091748 DE4091748T (enrdf_load_html_response) | 1989-09-26 | 1990-09-17 | |
| JP2512608A JPH05500385A (ja) | 1989-09-26 | 1990-09-17 | ドーピング方法 |
| PCT/FI1990/000218 WO1991005028A1 (en) | 1989-09-26 | 1990-09-17 | Doping method |
| FR9011754A FR2652358B1 (fr) | 1989-09-26 | 1990-09-24 | Methode de dopage d'une couche de sulfure de zinc. |
| GB9205180A GB2252450B (en) | 1989-09-26 | 1992-03-10 | Doping method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI894534 | 1989-09-26 | ||
| FI894534A FI83721C (fi) | 1989-09-26 | 1989-09-26 | Dopningsfoerfarande |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI894534A0 FI894534A0 (fi) | 1989-09-26 |
| FI83721B FI83721B (fi) | 1991-04-30 |
| FI83721C true FI83721C (fi) | 1993-11-22 |
Family
ID=8529054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI894534A FI83721C (fi) | 1989-09-26 | 1989-09-26 | Dopningsfoerfarande |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH05500385A (enrdf_load_html_response) |
| DE (1) | DE4091748T (enrdf_load_html_response) |
| FI (1) | FI83721C (enrdf_load_html_response) |
| FR (1) | FR2652358B1 (enrdf_load_html_response) |
| GB (1) | GB2252450B (enrdf_load_html_response) |
| WO (1) | WO1991005028A1 (enrdf_load_html_response) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103897692A (zh) * | 2014-03-31 | 2014-07-02 | 中国科学院上海光学精密机械研究所 | 过渡金属离子浓度渐变掺杂硫化锌或硒化锌及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS554794B2 (enrdf_load_html_response) * | 1973-07-31 | 1980-01-31 | ||
| GB2047462B (en) * | 1979-04-20 | 1983-04-20 | Thomas J | Method of manufacturing thin film electroluminescent devices |
| US4389973A (en) * | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
| JPS58157886A (ja) * | 1982-03-16 | 1983-09-20 | Matsushita Electric Ind Co Ltd | 螢光体薄膜の製造方法 |
| JPS6287487A (ja) * | 1985-10-14 | 1987-04-21 | Sharp Corp | 不純物ド−プ単結晶形成方法 |
-
1989
- 1989-09-26 FI FI894534A patent/FI83721C/fi not_active IP Right Cessation
-
1990
- 1990-09-17 DE DE19904091748 patent/DE4091748T/de not_active Withdrawn
- 1990-09-17 WO PCT/FI1990/000218 patent/WO1991005028A1/en active Application Filing
- 1990-09-17 JP JP2512608A patent/JPH05500385A/ja active Pending
- 1990-09-24 FR FR9011754A patent/FR2652358B1/fr not_active Expired - Fee Related
-
1992
- 1992-03-10 GB GB9205180A patent/GB2252450B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR2652358B1 (fr) | 1993-09-03 |
| GB9205180D0 (en) | 1992-05-13 |
| WO1991005028A1 (en) | 1991-04-18 |
| JPH05500385A (ja) | 1993-01-28 |
| FI894534A0 (fi) | 1989-09-26 |
| DE4091748T (enrdf_load_html_response) | 1992-08-27 |
| GB2252450A (en) | 1992-08-05 |
| FR2652358A1 (fr) | 1991-03-29 |
| GB2252450B (en) | 1993-01-20 |
| FI83721B (fi) | 1991-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM | Patent lapsed | ||
| MM | Patent lapsed |
Owner name: EPISYSTEMS OY LTD |