FI20115151L - Uudet mikromekaaniset laitteet - Google Patents

Uudet mikromekaaniset laitteet Download PDF

Info

Publication number
FI20115151L
FI20115151L FI20115151A FI20115151A FI20115151L FI 20115151 L FI20115151 L FI 20115151L FI 20115151 A FI20115151 A FI 20115151A FI 20115151 A FI20115151 A FI 20115151A FI 20115151 L FI20115151 L FI 20115151L
Authority
FI
Finland
Prior art keywords
vibrating
deflecting element
micromechanical devices
type dopant
novel
Prior art date
Application number
FI20115151A
Other languages
English (en)
Swedish (sv)
Other versions
FI126586B (fi
FI20115151A0 (fi
FI20115151A (fi
Inventor
Jyrki Kiihamäki
Antti Jaakkola
Tuomas Pensala
Maria Ganchenkova
Mika Prunnila
Original Assignee
Teknologian Tutkimuskeskus Vtt Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknologian Tutkimuskeskus Vtt Oy filed Critical Teknologian Tutkimuskeskus Vtt Oy
Publication of FI20115151A0 publication Critical patent/FI20115151A0/fi
Priority to FI20115151A priority Critical patent/FI126586B/fi
Priority to KR1020137024650A priority patent/KR101724661B1/ko
Priority to US13/985,876 priority patent/US9559660B2/en
Priority to EP12747759.4A priority patent/EP2676366B1/en
Priority to JP2013553977A priority patent/JP6109752B2/ja
Priority to CN201280009253.4A priority patent/CN103444079B/zh
Priority to PCT/FI2012/050157 priority patent/WO2012110708A1/en
Publication of FI20115151L publication Critical patent/FI20115151L/fi
Publication of FI20115151A publication Critical patent/FI20115151A/fi
Application granted granted Critical
Publication of FI126586B publication Critical patent/FI126586B/fi

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0081—Thermal properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02433—Means for compensation or elimination of undesired effects
    • H03H9/02448—Means for compensation or elimination of undesired effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2447—Beam resonators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
    • H03H2009/02503—Breath-like, e.g. Lam? mode, wine-glass mode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02519—Torsional
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H2009/241—Bulk-mode MEMS resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H2009/2442—Square resonators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thermal Sciences (AREA)
  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

Keksintö koskee mikromekaanista laitetta ja menetelmää sen valmistamiseksi. Laite käsittää värähtelevän tai poikkeutuvan elementin, joka on valmistettu puolijohdemateriaalista käsittäen n-tyypin seostusaineen sekä viritys- tai mittausvälineet toiminnallisesti kytkettynä mainittuun värähtelevään tai poikkeutuvaan elementtiin. Keksinnön mukaan värähtelevä tai poikkeutuva elementti on oleellisesti homogeenisesti seostettu mainitulla n-tyypin seostusaineella. Keksintö mahdollistaa moninaisten sellaisten käytännöllisten resonaattorien suunnittelun, joilla on alhainen lämpötilaliikehdintä.
FI20115151A 2011-02-17 2011-02-17 Uudet mikromekaaniset laitteet FI126586B (fi)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI20115151A FI126586B (fi) 2011-02-17 2011-02-17 Uudet mikromekaaniset laitteet
KR1020137024650A KR101724661B1 (ko) 2011-02-17 2012-02-17 신규한 마이크로메카닉 디바이스
US13/985,876 US9559660B2 (en) 2011-02-17 2012-02-17 Micromechanical devices comprising n-type doping agents
EP12747759.4A EP2676366B1 (en) 2011-02-17 2012-02-17 Novel micromechanical devices
JP2013553977A JP6109752B2 (ja) 2011-02-17 2012-02-17 新規な微小機械デバイス
CN201280009253.4A CN103444079B (zh) 2011-02-17 2012-02-17 微机械装置及制造微机械装置的方法
PCT/FI2012/050157 WO2012110708A1 (en) 2011-02-17 2012-02-17 Novel micromechanical devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20115151A FI126586B (fi) 2011-02-17 2011-02-17 Uudet mikromekaaniset laitteet

Publications (4)

Publication Number Publication Date
FI20115151A0 FI20115151A0 (fi) 2011-02-17
FI20115151L true FI20115151L (fi) 2012-08-18
FI20115151A FI20115151A (fi) 2012-08-18
FI126586B FI126586B (fi) 2017-02-28

Family

ID=43629823

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20115151A FI126586B (fi) 2011-02-17 2011-02-17 Uudet mikromekaaniset laitteet

Country Status (7)

Country Link
US (1) US9559660B2 (fi)
EP (1) EP2676366B1 (fi)
JP (1) JP6109752B2 (fi)
KR (1) KR101724661B1 (fi)
CN (1) CN103444079B (fi)
FI (1) FI126586B (fi)
WO (1) WO2012110708A1 (fi)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8234774B2 (en) 2007-12-21 2012-08-07 Sitime Corporation Method for fabricating a microelectromechanical system (MEMS) resonator
US8941191B2 (en) * 2010-07-30 2015-01-27 Cornell University Method of actuating an internally transduced pn-diode-based ultra high frequency micromechanical resonator
US9695036B1 (en) * 2012-02-02 2017-07-04 Sitime Corporation Temperature insensitive resonant elements and oscillators and methods of designing and manufacturing same
US8916407B1 (en) 2012-03-29 2014-12-23 Sitime Corporation MEMS device and method of manufacturing same
JP6003994B2 (ja) * 2012-09-13 2016-10-05 株式会社村田製作所 振動装置及びその製造方法
CN105210294B (zh) 2013-05-13 2017-09-29 株式会社村田制作所 振动装置
WO2014185282A1 (ja) 2013-05-13 2014-11-20 株式会社村田製作所 振動装置
CN105210295B (zh) 2013-05-13 2017-10-03 株式会社村田制作所 振动装置
WO2014188317A1 (en) 2013-05-20 2014-11-27 Murata Manufacturing Co., Ltd. An improved microelectromechanical resonator
US9412934B2 (en) * 2013-05-20 2016-08-09 Murata Manufacturing Co., Ltd. Microelectromechanical resonator
US9705470B1 (en) 2014-02-09 2017-07-11 Sitime Corporation Temperature-engineered MEMS resonator
US9712128B2 (en) 2014-02-09 2017-07-18 Sitime Corporation Microelectromechanical resonator
US10291200B2 (en) * 2014-07-02 2019-05-14 The Royal Institution For The Advancement Of Learning / Mcgill University Methods and devices for microelectromechanical resonators
WO2016051023A1 (en) * 2014-10-03 2016-04-07 Teknologian Tutkimuskeskus Vtt Oy Temperature compensated compound resonator
JP6567661B2 (ja) * 2014-10-03 2019-08-28 テクノロギアン トゥトキムスケスクス ヴェーテーテー オイ 温度補償されたプレート共振器
WO2016051022A1 (en) * 2014-10-03 2016-04-07 Teknologian Tutkimuskeskus Vtt Oy Temperature compensated beam resonator
CN106797207B (zh) * 2014-12-17 2021-04-20 株式会社村田制作所 压电振子以及压电振动装置
WO2017168055A1 (en) 2016-04-01 2017-10-05 Teknologian Tutkimuskeskus Vtt Oy Stabile micromechanical devices
JP6644355B2 (ja) 2016-05-26 2020-02-12 株式会社村田製作所 共振子及び共振装置
FI127787B (fi) * 2016-07-01 2019-02-28 Teknologian Tutkimuskeskus Vtt Oy Mikromekaaninen resonaattori
US10291203B2 (en) * 2016-07-12 2019-05-14 Murata Manufacturing Co., Ltd. Piezoelectric MEMS resonator with a high quality factor
US10676349B1 (en) 2016-08-12 2020-06-09 Sitime Corporation MEMS resonator
FI128032B (fi) 2017-09-05 2019-08-15 Tikitin Oy Uuniohjattu taajuusreferenssioskillaattori ja menetelmä sen valmistamiseksi
FI128436B (fi) * 2018-02-08 2020-05-15 Tikitin Oy MEMS-resonaattorijärjestely
FI128208B (fi) * 2018-02-08 2019-12-31 Tikitin Oy Kytketty MEMS-resonaattori
FI20195302A1 (fi) 2019-04-12 2020-10-13 Tikitin Oy Mems-resonaattori
US10958235B2 (en) * 2019-08-21 2021-03-23 Murata Manufacturing Co., Ltd. Thickness mode resonator
US11448085B2 (en) 2019-11-11 2022-09-20 Raytheon Technologies Corporation Remote temperature measurement system for gas turbine engine
CN113285687B (zh) * 2021-03-05 2023-02-03 天津大学 温度补偿型薄膜体声波谐振器及其形成方法、电子设备

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4358745A (en) 1981-03-16 1982-11-09 International Business Machines Corporation Semiconductor surface acoustic wave device
US4719383A (en) 1985-05-20 1988-01-12 The United States Of America As Represented By The United States Department Of Energy Piezoelectric shear wave resonator and method of making same
US5815054A (en) * 1997-05-27 1998-09-29 Motorola Inc. Surface micromachined acoustic wave piezoelectric crystal with electrodes on raised ridges and in spaces therebetween
JP4193521B2 (ja) * 2002-03-20 2008-12-10 ソニー株式会社 燃料電池装置及び燃料電池の制御方法
US6707351B2 (en) * 2002-03-27 2004-03-16 Motorola, Inc. Tunable MEMS resonator and method for tuning
US6985051B2 (en) * 2002-12-17 2006-01-10 The Regents Of The University Of Michigan Micromechanical resonator device and method of making a micromechanical device
FR2854993B1 (fr) * 2003-05-15 2005-07-15 Suisse Electronique Microtech Resonateurs integres et base de temps incorporant de tels resonateurs
US7144750B2 (en) * 2003-06-12 2006-12-05 Dalsa Semiconductor Inc. Method of fabricating silicon-based MEMS devices
KR20060119957A (ko) * 2003-09-10 2006-11-24 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 전기기계 변환기 및 전기 장치
US7068125B2 (en) * 2004-03-04 2006-06-27 Robert Bosch Gmbh Temperature controlled MEMS resonator and method for controlling resonator frequency
ATE494660T1 (de) 2004-06-24 2011-01-15 Nokia Siemens Networks Oy Frequenzsynthesizer
EP1997225B1 (en) * 2006-03-09 2009-09-02 Nxp B.V. Mems resonator having at least one resonator mode shape
US7446619B2 (en) * 2006-06-14 2008-11-04 Sitime Corporation Temperature measurement system having a plurality of microelectromechanical resonators and method of operating same
US7564162B2 (en) * 2006-12-13 2009-07-21 Georgia Tech Research Corp. Process compensated micromechanical resonators
US7907035B2 (en) * 2007-12-18 2011-03-15 Robert Bosch Gmbh MEMS resonator array structure and method of operating and using same
JP2009190150A (ja) * 2008-02-18 2009-08-27 Sanyo Electric Co Ltd マイクロエレクトロメカニカルデバイス及びその製造方法。
US8354332B2 (en) 2008-11-26 2013-01-15 Georgia Tech Research Corporation Methods of forming micro-electromichanical resonators having boron-doped resonator bodies containing eutectic alloys
EP2302792B1 (en) 2009-09-22 2012-11-14 Nxp B.V. Resonator
WO2011047170A1 (en) * 2009-10-14 2011-04-21 Gavin Ho Micromechanical resonator with enlarged portion
FI124453B (fi) 2010-08-13 2014-09-15 Valtion Teknillinen Mikromekaaninen resonaattorijärjestelmä ja menetelmä sen valmistamiseksi
FI20105851A (fi) 2010-08-13 2012-02-14 Valtion Teknillinen Mikromekaaninen resonaattori ja menetelmä sen valmistamiseksi

Also Published As

Publication number Publication date
EP2676366B1 (en) 2020-12-02
EP2676366A4 (en) 2014-08-06
KR20140021571A (ko) 2014-02-20
JP6109752B2 (ja) 2017-04-05
US20140077898A1 (en) 2014-03-20
KR101724661B1 (ko) 2017-04-18
CN103444079B (zh) 2017-05-31
CN103444079A (zh) 2013-12-11
EP2676366A1 (en) 2013-12-25
FI126586B (fi) 2017-02-28
FI20115151A0 (fi) 2011-02-17
JP2014507096A (ja) 2014-03-20
WO2012110708A1 (en) 2012-08-23
FI20115151A (fi) 2012-08-18
US9559660B2 (en) 2017-01-31

Similar Documents

Publication Publication Date Title
FI20115151L (fi) Uudet mikromekaaniset laitteet
FI20105851A0 (fi) Mikromekaaninen resonaattori ja menetelmä sen valmistamiseksi
FI20115465A (fi) Mikromekaaninen laite ja menetelmä sen suunnittelemiseksi
BR112016000106A2 (pt) anticorpos c1q do fator anti-complemento e usos dos mesmos
DK3440703T3 (da) Waferskalaenhed til isolator-membran-isolatoranordninger til nanoporemåling
BR112014000510A2 (pt) medidor vibratório, e, método de determinar frequência ressonante no mesmo
WO2014160006A3 (en) Microphone package with integrated substrate
DE112014004031A5 (de) Fliekraftpendel-Anschlagfederelement, Fliehkraftpendeleinrichtung sowie Komponentenanordnung
WO2013117189A3 (de) Ultraschallaktor
KR20180084795A (ko) 반도체 장치, 이 반도체 장치의 제작 방법, 또는 이 반도체 장치를 가지는 표시 장치
ITUA20164571A1 (it) Dispositivo optoelettronico multibanda per applicazioni colorimetriche e relativo metodo di fabbricazione
TR201819239T4 (tr) İvmelenme Sensörü Ve Bir İvmelenme Sensörünün Üretimi İçin Metot
WO2014115173A3 (en) Apparatus for non-contact level sensing
TW201612098A (en) Micromechanical sensor and method for manufacturing a micromechanical sensor
MX348366B (es) Dispositivo de ajuste, modular, en particular para aparatos rf.
EP3010037A4 (en) Silicon carbide semiconductor device manufacturing method
DK3279953T3 (da) Vindueselement til en pakke til en optisk indretning, pakke til en optisk indretning, fremgangsmåder til fremstilling heraf
DE112014004404A5 (de) Fliehkraftpendeleinrichtung
BR112012020055A2 (pt) estrutura de pacote de pastilha semicondutora.
WO2012087346A3 (en) Fluid heater
BR112015012559A2 (pt) sistema e método de escala de tensão adaptativa
BR112013027223A2 (pt) dispositivo sensor, e, separador centrífugo
EP3043376A4 (en) Silicon carbide semiconductor element and method for manufacturing silicon carbide semiconductor element
TWI800509B (zh) 器件晶片的製造方法
BR112015028331A2 (pt) método aperfeiçoado para preparar certas oximas e éteres de oxima

Legal Events

Date Code Title Description
PC Transfer of assignment of patent

Owner name: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

FG Patent granted

Ref document number: 126586

Country of ref document: FI

Kind code of ref document: B