FI20115465A - Mikromekaaninen laite ja menetelmä sen suunnittelemiseksi - Google Patents

Mikromekaaninen laite ja menetelmä sen suunnittelemiseksi Download PDF

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Publication number
FI20115465A
FI20115465A FI20115465A FI20115465A FI20115465A FI 20115465 A FI20115465 A FI 20115465A FI 20115465 A FI20115465 A FI 20115465A FI 20115465 A FI20115465 A FI 20115465A FI 20115465 A FI20115465 A FI 20115465A
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FI
Finland
Prior art keywords
regions
semiconductor element
temperature
micromechanical device
design
Prior art date
Application number
FI20115465A
Other languages
English (en)
Swedish (sv)
Other versions
FI123933B (fi
FI20115465A0 (fi
Inventor
Mika Prunnila
Antti Jaakkola
Tuomas Pensala
Original Assignee
Teknologian Tutkimuskeskus Vtt Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=44071592&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FI20115465(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Teknologian Tutkimuskeskus Vtt Oy filed Critical Teknologian Tutkimuskeskus Vtt Oy
Priority to FI20115465A priority Critical patent/FI123933B/fi
Publication of FI20115465A0 publication Critical patent/FI20115465A0/fi
Priority to US13/468,052 priority patent/US8558643B2/en
Priority to PCT/FI2012/050456 priority patent/WO2012156585A1/en
Priority to JP2014510842A priority patent/JP5877242B2/ja
Priority to ES12786090.6T priority patent/ES2582328T3/es
Priority to EP12786090.6A priority patent/EP2707953B1/en
Priority to KR1020137033278A priority patent/KR101668835B1/ko
Priority to CN201280023350.9A priority patent/CN103650343B/zh
Publication of FI20115465A publication Critical patent/FI20115465A/fi
Publication of FI123933B publication Critical patent/FI123933B/fi
Application granted granted Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0081—Thermal properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02433—Means for compensation or elimination of undesired effects
    • H03H9/02448—Means for compensation or elimination of undesired effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2447—Beam resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0164—Controlling internal stress of deposited layers by doping the layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0167—Controlling internal stress of deposited layers by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H2009/2442—Square resonators

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
FI20115465A 2011-05-13 2011-05-13 Mikromekaaninen laite ja menetelmä sen suunnittelemiseksi FI123933B (fi)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FI20115465A FI123933B (fi) 2011-05-13 2011-05-13 Mikromekaaninen laite ja menetelmä sen suunnittelemiseksi
US13/468,052 US8558643B2 (en) 2011-05-13 2012-05-10 Micromechanical device including N-type doping for providing temperature compensation and method of designing thereof
CN201280023350.9A CN103650343B (zh) 2011-05-13 2012-05-11 微机械装置及其设计方法
JP2014510842A JP5877242B2 (ja) 2011-05-13 2012-05-11 微小機械素子及びその設計方法
PCT/FI2012/050456 WO2012156585A1 (en) 2011-05-13 2012-05-11 Micromechanical device and method of designing thereof
ES12786090.6T ES2582328T3 (es) 2011-05-13 2012-05-11 Dispositivo micromecánico
EP12786090.6A EP2707953B1 (en) 2011-05-13 2012-05-11 Micromechanical device
KR1020137033278A KR101668835B1 (ko) 2011-05-13 2012-05-11 마이크로기계 장치 및 그 설계 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20115465 2011-05-13
FI20115465A FI123933B (fi) 2011-05-13 2011-05-13 Mikromekaaninen laite ja menetelmä sen suunnittelemiseksi

Publications (3)

Publication Number Publication Date
FI20115465A0 FI20115465A0 (fi) 2011-05-13
FI20115465A true FI20115465A (fi) 2012-11-14
FI123933B FI123933B (fi) 2013-12-31

Family

ID=44071592

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20115465A FI123933B (fi) 2011-05-13 2011-05-13 Mikromekaaninen laite ja menetelmä sen suunnittelemiseksi

Country Status (8)

Country Link
US (1) US8558643B2 (fi)
EP (1) EP2707953B1 (fi)
JP (1) JP5877242B2 (fi)
KR (1) KR101668835B1 (fi)
CN (1) CN103650343B (fi)
ES (1) ES2582328T3 (fi)
FI (1) FI123933B (fi)
WO (1) WO2012156585A1 (fi)

Cited By (1)

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WO2014188317A1 (en) 2013-05-20 2014-11-27 Murata Manufacturing Co., Ltd. An improved microelectromechanical resonator

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US8234774B2 (en) 2007-12-21 2012-08-07 Sitime Corporation Method for fabricating a microelectromechanical system (MEMS) resonator
US9319020B2 (en) * 2010-10-19 2016-04-19 Georgia Tech Research Corporation Temperature compensation in a semiconductor micromechanical resonator via charge carrier depletion
US9090451B1 (en) 2011-07-19 2015-07-28 Integrated Device Technology, Inc. Microelectromechanical resonators having offset [100] and [110] crystal orientations
US9695036B1 (en) 2012-02-02 2017-07-04 Sitime Corporation Temperature insensitive resonant elements and oscillators and methods of designing and manufacturing same
US8916407B1 (en) * 2012-03-29 2014-12-23 Sitime Corporation MEMS device and method of manufacturing same
CN105210294B (zh) * 2013-05-13 2017-09-29 株式会社村田制作所 振动装置
WO2014185282A1 (ja) 2013-05-13 2014-11-20 株式会社村田製作所 振動装置
SG11201508861WA (en) 2013-05-13 2015-11-27 Murata Manufacturing Co Vibrating device
US9412934B2 (en) 2013-05-20 2016-08-09 Murata Manufacturing Co., Ltd. Microelectromechanical resonator
TWI538396B (zh) * 2013-05-20 2016-06-11 國立清華大學 微機電共振器之主動式溫度補償方法及其共振器
US9712128B2 (en) 2014-02-09 2017-07-18 Sitime Corporation Microelectromechanical resonator
US9705470B1 (en) 2014-02-09 2017-07-11 Sitime Corporation Temperature-engineered MEMS resonator
CN107408933B (zh) * 2014-10-03 2020-11-20 芬兰国家技术研究中心股份公司 温度补偿复合谐振器
WO2016051025A1 (en) 2014-10-03 2016-04-07 Teknologian Tutkimuskeskus Vtt Oy Temperature compensated plate resonator
EP3202036B1 (en) * 2014-10-03 2020-05-27 Teknologian Tutkimuskeskus VTT OY Temperature compensated beam resonator
WO2016098868A1 (ja) * 2014-12-17 2016-06-23 株式会社村田製作所 圧電振動子及び圧電振動装置
US10185797B2 (en) * 2015-06-15 2019-01-22 Cadence Design Systems, Inc. Methods and devices for extraction of MEMS structures from a MEMS layout
FI127940B (fi) * 2016-07-01 2019-05-31 Teknologian Tutkimuskeskus Vtt Oy Mikromekaaninen resonaattori ja menetelmä mikromekaanisen resonaattorin trimmaamiseksi
FI127787B (fi) * 2016-07-01 2019-02-28 Teknologian Tutkimuskeskus Vtt Oy Mikromekaaninen resonaattori
US10676349B1 (en) 2016-08-12 2020-06-09 Sitime Corporation MEMS resonator
CN107045565A (zh) * 2017-01-12 2017-08-15 王炳超 高强度两级渐变刚度板簧的最大限位挠度的设计方法
US11533042B2 (en) * 2018-01-16 2022-12-20 Georgia Tech Research Corporation Distributed-mode beam and frame resonators for high frequency timing circuits
CN117882295A (zh) * 2021-09-03 2024-04-12 京瓷技术公司 温度稳定mems谐振器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014188317A1 (en) 2013-05-20 2014-11-27 Murata Manufacturing Co., Ltd. An improved microelectromechanical resonator

Also Published As

Publication number Publication date
FI123933B (fi) 2013-12-31
EP2707953A1 (en) 2014-03-19
WO2012156585A1 (en) 2012-11-22
EP2707953A4 (en) 2014-12-03
JP2014519260A (ja) 2014-08-07
FI20115465A0 (fi) 2011-05-13
KR20140026560A (ko) 2014-03-05
EP2707953B1 (en) 2016-04-13
CN103650343B (zh) 2016-06-22
US8558643B2 (en) 2013-10-15
KR101668835B1 (ko) 2016-10-28
ES2582328T3 (es) 2016-09-12
JP5877242B2 (ja) 2016-03-02
US20120286903A1 (en) 2012-11-15
CN103650343A (zh) 2014-03-19

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