FI20085844A0 - Järjestelmät, menetelmät ja laitteet suurtehoisia komplementaarisia metallioksidipuolijohde (CMOS) antennikytkimiä varten, käyttäen runkokytkentää ja ulkopuolista komponenttia monipinoisena rakenteena - Google Patents

Järjestelmät, menetelmät ja laitteet suurtehoisia komplementaarisia metallioksidipuolijohde (CMOS) antennikytkimiä varten, käyttäen runkokytkentää ja ulkopuolista komponenttia monipinoisena rakenteena

Info

Publication number
FI20085844A0
FI20085844A0 FI20085844A FI20085844A FI20085844A0 FI 20085844 A0 FI20085844 A0 FI 20085844A0 FI 20085844 A FI20085844 A FI 20085844A FI 20085844 A FI20085844 A FI 20085844A FI 20085844 A0 FI20085844 A0 FI 20085844A0
Authority
FI
Finland
Prior art keywords
cmos
systems
equipment
methods
metal oxide
Prior art date
Application number
FI20085844A
Other languages
English (en)
Swedish (sv)
Other versions
FI20085844A (fi
FI123967B (fi
Inventor
Min Sik Ahn
Chang-Ho Lee
Jaejoon Chang
Wang Myong Woo
Haksun Kim
Joy Laskar
Original Assignee
Samsung Electro Mech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mech filed Critical Samsung Electro Mech
Publication of FI20085844A0 publication Critical patent/FI20085844A0/fi
Publication of FI20085844A publication Critical patent/FI20085844A/fi
Application granted granted Critical
Publication of FI123967B publication Critical patent/FI123967B/fi

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FI20085844A 2007-09-14 2008-09-10 Järjestelmät, menetelmät ja laitteet suuritehoisia komplementaarisia metallioksidipuolijohde (CMOS) antennikytkimiä varten, käyttäen runkokytkentää ja ulkopuolista komponenttia monipinoisena rakenteena FI123967B (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/855,950 US7738841B2 (en) 2007-09-14 2007-09-14 Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure
US85595007 2007-09-14

Publications (3)

Publication Number Publication Date
FI20085844A0 true FI20085844A0 (fi) 2008-09-10
FI20085844A FI20085844A (fi) 2009-03-15
FI123967B FI123967B (fi) 2014-01-15

Family

ID=40446132

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20085844A FI123967B (fi) 2007-09-14 2008-09-10 Järjestelmät, menetelmät ja laitteet suuritehoisia komplementaarisia metallioksidipuolijohde (CMOS) antennikytkimiä varten, käyttäen runkokytkentää ja ulkopuolista komponenttia monipinoisena rakenteena

Country Status (7)

Country Link
US (1) US7738841B2 (fi)
KR (1) KR101208175B1 (fi)
CN (1) CN101388682A (fi)
DE (1) DE102008046778A1 (fi)
FI (1) FI123967B (fi)
FR (1) FR2921213B1 (fi)
GB (1) GB2452849B (fi)

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US7843280B2 (en) * 2006-12-01 2010-11-30 Samsung Electro-Mechanics Company Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure
US8417196B2 (en) 2010-06-07 2013-04-09 Skyworks Solutions, Inc. Apparatus and method for directional coupling
US8604873B2 (en) 2010-12-05 2013-12-10 Rf Micro Devices (Cayman Islands), Ltd. Ground partitioned power amplifier for stable operation
US8629725B2 (en) 2010-12-05 2014-01-14 Rf Micro Devices (Cayman Islands), Ltd. Power amplifier having a nonlinear output capacitance equalization
US8766724B2 (en) 2010-12-05 2014-07-01 Rf Micro Devices (Cayman Islands), Ltd. Apparatus and method for sensing and converting radio frequency to direct current
US8909171B2 (en) * 2011-07-19 2014-12-09 Samsung Electro-Mechanics Co., Ltd. RF antenna switch circuit, high frequency antenna component, and mobile communication device
WO2013084740A1 (ja) * 2011-12-09 2013-06-13 株式会社村田製作所 半導体装置
US9373955B2 (en) * 2012-01-09 2016-06-21 Skyworks Solutions, Inc. Devices and methods related to electrostatic discharge-protected CMOS switches
US8843083B2 (en) 2012-07-09 2014-09-23 Rf Micro Devices (Cayman Islands), Ltd. CMOS switching circuitry of a transmitter module
US8731490B2 (en) 2012-07-27 2014-05-20 Rf Micro Devices (Cayman Islands), Ltd. Methods and circuits for detuning a filter and matching network at the output of a power amplifier
WO2014182952A1 (en) * 2013-05-08 2014-11-13 Rfaxis, Inc. Harmonic cancellation for radio frequency front-end switches
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CN103795432A (zh) * 2014-03-10 2014-05-14 锐迪科创微电子（北京）有限公司 高线性度多模射频天线开关电路
US10290940B2 (en) * 2014-03-19 2019-05-14 Futurewei Technologies, Inc. Broadband switchable antenna
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KR101901694B1 (ko) 2014-05-09 2018-09-27 삼성전기 주식회사 고주파 스위치
US10032731B2 (en) * 2014-09-08 2018-07-24 Skyworks Solutions, Inc. Voltage compensated switch stack
US10148233B2 (en) * 2014-12-30 2018-12-04 Skyworks Solutions, Inc. Transmit-receive isolation in a transformer-based radio frequency power amplifier
CN104682936B (zh) * 2015-02-04 2017-10-03 广东工业大学 一种具有体区自适应偏置功能的cmos soi射频开关结构
CN107251319B (zh) * 2015-02-26 2020-06-02 特拉维夫大学拉莫特有限公司 用于改进片上天线的效率的天线芯片和系统
CN106612113B (zh) * 2015-10-21 2020-08-21 上海新微技术研发中心有限公司 一种提高打开的支路间隔离度的射频开关电路
US10181828B2 (en) 2016-06-29 2019-01-15 Skyworks Solutions, Inc. Active cross-band isolation for a transformer-based power amplifier
US10910714B2 (en) 2017-09-11 2021-02-02 Qualcomm Incorporated Configurable power combiner and splitter
WO2020130161A1 (ko) * 2018-12-17 2020-06-25 전자부품연구원 밀리미터웨이브 고출력 스위치
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KR102625588B1 (ko) 2022-03-14 2024-01-15 전북대학교산학협력단 고선형 안테나 스위치 및 이를 포함하는 전자 통신 장치

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Also Published As

Publication number Publication date
FI20085844A (fi) 2009-03-15
FR2921213B1 (fr) 2017-03-31
US7738841B2 (en) 2010-06-15
CN101388682A (zh) 2009-03-18
KR101208175B1 (ko) 2012-12-04
FI123967B (fi) 2014-01-15
GB2452849A (en) 2009-03-18
US20090073078A1 (en) 2009-03-19
DE102008046778A1 (de) 2009-05-28
FR2921213A1 (fr) 2009-03-20
GB0816744D0 (en) 2008-10-22
GB2452849B (en) 2010-05-12
KR20090028446A (ko) 2009-03-18

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