FI20085844A0 - Systems, förfaranden och anordningar för högeffektiva komplementära metalloxidhalvledar (CMOS) -antennkopplare genom användning av stamkoppling och yttre komponent i multi-stapelkonstruktion - Google Patents

Systems, förfaranden och anordningar för högeffektiva komplementära metalloxidhalvledar (CMOS) -antennkopplare genom användning av stamkoppling och yttre komponent i multi-stapelkonstruktion

Info

Publication number
FI20085844A0
FI20085844A0 FI20085844A FI20085844A FI20085844A0 FI 20085844 A0 FI20085844 A0 FI 20085844A0 FI 20085844 A FI20085844 A FI 20085844A FI 20085844 A FI20085844 A FI 20085844A FI 20085844 A0 FI20085844 A0 FI 20085844A0
Authority
FI
Finland
Prior art keywords
cmos
systems
equipment
methods
metal oxide
Prior art date
Application number
FI20085844A
Other languages
English (en)
Finnish (fi)
Other versions
FI20085844A (sv
FI123967B (sv
Inventor
Min Sik Ahn
Chang-Ho Lee
Jaejoon Chang
Wang Myong Woo
Haksun Kim
Joy Laskar
Original Assignee
Samsung Electro Mech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mech filed Critical Samsung Electro Mech
Publication of FI20085844A0 publication Critical patent/FI20085844A0/sv
Publication of FI20085844A publication Critical patent/FI20085844A/sv
Application granted granted Critical
Publication of FI123967B publication Critical patent/FI123967B/sv

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FI20085844A 2007-09-14 2008-09-10 Systems, förfaranden och anordningar för högeffektiva komplementära metalloxidhalvledar (CMOS) -antennkopplare genom användning av stamkoppling och yttre komponent i multi-stapelkonstruktion FI123967B (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/855,950 US7738841B2 (en) 2007-09-14 2007-09-14 Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure
US85595007 2007-09-14

Publications (3)

Publication Number Publication Date
FI20085844A0 true FI20085844A0 (sv) 2008-09-10
FI20085844A FI20085844A (sv) 2009-03-15
FI123967B FI123967B (sv) 2014-01-15

Family

ID=40446132

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20085844A FI123967B (sv) 2007-09-14 2008-09-10 Systems, förfaranden och anordningar för högeffektiva komplementära metalloxidhalvledar (CMOS) -antennkopplare genom användning av stamkoppling och yttre komponent i multi-stapelkonstruktion

Country Status (7)

Country Link
US (1) US7738841B2 (sv)
KR (1) KR101208175B1 (sv)
CN (1) CN101388682A (sv)
DE (1) DE102008046778A1 (sv)
FI (1) FI123967B (sv)
FR (1) FR2921213B1 (sv)
GB (1) GB2452849B (sv)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8624678B2 (en) 2010-12-05 2014-01-07 Rf Micro Devices (Cayman Islands), Ltd. Output stage of a power amplifier having a switched-bulk biasing and adaptive biasing
KR101406401B1 (ko) * 2006-11-10 2014-06-13 스카이워크스 솔루션즈, 인코포레이티드 선형성 성능이 개선된 콤팩트 저손실 고주파수 스위치
US7843280B2 (en) * 2006-12-01 2010-11-30 Samsung Electro-Mechanics Company Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure
US8008970B1 (en) 2010-06-07 2011-08-30 Skyworks Solutions, Inc. Apparatus and method for enabled switch detection
US8766724B2 (en) 2010-12-05 2014-07-01 Rf Micro Devices (Cayman Islands), Ltd. Apparatus and method for sensing and converting radio frequency to direct current
US8629725B2 (en) 2010-12-05 2014-01-14 Rf Micro Devices (Cayman Islands), Ltd. Power amplifier having a nonlinear output capacitance equalization
US8604873B2 (en) 2010-12-05 2013-12-10 Rf Micro Devices (Cayman Islands), Ltd. Ground partitioned power amplifier for stable operation
US8909171B2 (en) * 2011-07-19 2014-12-09 Samsung Electro-Mechanics Co., Ltd. RF antenna switch circuit, high frequency antenna component, and mobile communication device
WO2013084740A1 (ja) * 2011-12-09 2013-06-13 株式会社村田製作所 半導体装置
US9373955B2 (en) 2012-01-09 2016-06-21 Skyworks Solutions, Inc. Devices and methods related to electrostatic discharge-protected CMOS switches
US8843083B2 (en) 2012-07-09 2014-09-23 Rf Micro Devices (Cayman Islands), Ltd. CMOS switching circuitry of a transmitter module
US8731490B2 (en) 2012-07-27 2014-05-20 Rf Micro Devices (Cayman Islands), Ltd. Methods and circuits for detuning a filter and matching network at the output of a power amplifier
WO2014182952A1 (en) * 2013-05-08 2014-11-13 Rfaxis, Inc. Harmonic cancellation for radio frequency front-end switches
KR101952857B1 (ko) * 2013-12-20 2019-02-27 삼성전기주식회사 스위칭 회로 및 이를 포함하는 고주파 스위치
CN103795432A (zh) * 2014-03-10 2014-05-14 锐迪科创微电子（北京）有限公司 高线性度多模射频天线开关电路
US10290940B2 (en) * 2014-03-19 2019-05-14 Futurewei Technologies, Inc. Broadband switchable antenna
CN103973291B (zh) * 2014-04-22 2017-02-01 华为技术有限公司 射频天线开关
KR101901694B1 (ko) 2014-05-09 2018-09-27 삼성전기 주식회사 고주파 스위치
US10032731B2 (en) * 2014-09-08 2018-07-24 Skyworks Solutions, Inc. Voltage compensated switch stack
US10148233B2 (en) * 2014-12-30 2018-12-04 Skyworks Solutions, Inc. Transmit-receive isolation in a transformer-based radio frequency power amplifier
CN104682936B (zh) * 2015-02-04 2017-10-03 广东工业大学 一种具有体区自适应偏置功能的cmos soi射频开关结构
WO2016135730A1 (en) * 2015-02-26 2016-09-01 Ramot At Tel-Aviv University Ltd. Technique for improving efficiency of on-chip antennas
CN106612113B (zh) * 2015-10-21 2020-08-21 上海新微技术研发中心有限公司 一种提高打开的支路间隔离度的射频开关电路
US10181828B2 (en) 2016-06-29 2019-01-15 Skyworks Solutions, Inc. Active cross-band isolation for a transformer-based power amplifier
US10910714B2 (en) 2017-09-11 2021-02-02 Qualcomm Incorporated Configurable power combiner and splitter
KR20200074419A (ko) * 2018-12-17 2020-06-25 전자부품연구원 밀리미터웨이브 고출력 스위치
US11437992B2 (en) 2020-07-30 2022-09-06 Mobix Labs, Inc. Low-loss mm-wave CMOS resonant switch
KR102625588B1 (ko) 2022-03-14 2024-01-15 전북대학교산학협력단 고선형 안테나 스위치 및 이를 포함하는 전자 통신 장치

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461265A (en) * 1992-05-25 1995-10-24 Matsushita Electric Industrial Co., Ltd. High-frequency variable impedance circuit having improved linearity of operating characteristics
US5430403A (en) 1993-09-20 1995-07-04 Micrel, Inc. Field effect transistor with switchable body to source connection
JPH08237166A (ja) 1995-02-24 1996-09-13 Murata Mfg Co Ltd Ｒｆスイッチ内蔵アンテナ共用器
US5818099A (en) * 1996-10-03 1998-10-06 International Business Machines Corporation MOS high frequency switch circuit using a variable well bias
JP2964975B2 (ja) * 1997-02-26 1999-10-18 日本電気株式会社 高周波スイッチ回路
FR2783654B1 (fr) * 1998-09-23 2006-07-28 Sagem Emetteur-recepteur bibande a double dispositif de rayonnement
US6111778A (en) 1999-05-10 2000-08-29 International Business Machines Corporation Body contacted dynamic memory
US6396325B2 (en) * 1999-12-03 2002-05-28 Fairchild Semiconductor Corporation High frequency MOSFET switch
US6804502B2 (en) * 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US6882829B2 (en) * 2002-04-02 2005-04-19 Texas Instruments Incorporated Integrated circuit incorporating RF antenna switch and power amplifier
JP4262933B2 (ja) * 2002-05-30 2009-05-13 Ｎｅｃエレクトロニクス株式会社 高周波回路素子
US7092677B1 (en) * 2002-09-05 2006-08-15 Analog Devices, Inc. 2V SPDT switch for high power RF wireless applications
US7233775B2 (en) * 2002-10-14 2007-06-19 Nxp B.V. Transmit and receive antenna switch
US7120399B2 (en) * 2003-04-25 2006-10-10 Broadcom Corporation High speed CMOS transmit-receive antenna switch
TW200620822A (en) * 2004-12-08 2006-06-16 Airoha Tech Corp Switching circuits
US7619462B2 (en) * 2005-02-09 2009-11-17 Peregrine Semiconductor Corporation Unpowered switch and bleeder circuit
CN101156316B (zh) * 2005-04-08 2011-09-07 松下电器产业株式会社 高频放大器以及收发系统
JP2006304013A (ja) * 2005-04-21 2006-11-02 Matsushita Electric Ind Co Ltd スイッチ回路
JP4724498B2 (ja) * 2005-08-30 2011-07-13 ルネサスエレクトロニクス株式会社 半導体集積回路装置および高周波電力増幅モジュール
US8288829B2 (en) * 2006-09-21 2012-10-16 Nanyang Technological University Triple well transmit-receive switch transistor
US7890063B2 (en) * 2006-10-03 2011-02-15 Samsung Electro-Mechanics Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure
US7843280B2 (en) * 2006-12-01 2010-11-30 Samsung Electro-Mechanics Company Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure
JP4342569B2 (ja) * 2007-04-17 2009-10-14 株式会社東芝 高周波スイッチ回路

Also Published As

Publication number Publication date
KR20090028446A (ko) 2009-03-18
CN101388682A (zh) 2009-03-18
FI20085844A (sv) 2009-03-15
US20090073078A1 (en) 2009-03-19
FR2921213B1 (fr) 2017-03-31
GB0816744D0 (en) 2008-10-22
GB2452849A (en) 2009-03-18
KR101208175B1 (ko) 2012-12-04
FI123967B (sv) 2014-01-15
DE102008046778A1 (de) 2009-05-28
US7738841B2 (en) 2010-06-15
FR2921213A1 (fr) 2009-03-20
GB2452849B (en) 2010-05-12

Similar Documents

Publication Publication Date Title
FI20085844A0 (sv) Systems, förfaranden och anordningar för högeffektiva komplementära metalloxidhalvledar (CMOS) -antennkopplare genom användning av stamkoppling och yttre komponent i multi-stapelkonstruktion
FI20075675A0 (sv) System, förfaranden och apparaturer för komplementärmetaloxidhalvledar(CMOS)antennkopplingar utnyttjande stomkoppling i en multistapestructur
FI20075409A (sv) System, förfaranden och apparatur för komplementära metalloxidhalvledar (CMOS)-antennströmbrytare genom att använda switchade resonatorer
EP2543065A4 (en) Through-package-via (tpv) structures on inorganic interposer and methods for fabricating same
WO2011063058A3 (en) Selective wireless power transfer
WO2012091471A3 (ko) 화합물 및 이를 이용한 유기전기소자, 그 전자장치
EP3053899A4 (en) Cu/ceramic material joint, method for manufacturing cu/ceramic material joint, and substrate for power module
GB0917865D0 (en) Magnetic field coupling type antenna, magnetic field coupling type antenna module, magnetic field coupling type antenna device,and their manufacturingmethods
EP2595311A4 (en) LOW NOISE UNIVERSAL HEAD (ULB) HEAD CIRCUIT, AS WELL AS CHIP, LOW NOISE UNIVERSAL HEAD CIRCUIT, AND METHOD
EP2452997A4 (en) CONNECTION FOR AN ORGANIC PHOTOELECTRIC ELEMENT AND ORGANIC PHOTOELECTRIC ELEMENT THEREWITH
BRPI0906511A2 (pt) montagens fotovoltaica, de conversão de potência e de conector, e, estação de acoplamento.
GB2437471B (en) Near field communications, NFC, communicators and NFC communications enabled devices
EP2641391A4 (en) CAMERA MODULE AND MANUFACTURING METHOD THEREFOR
FI20075846A0 (sv) System, förfaranden och anordningar för högeffektkomplementmetalloxidhalvledar (CMOS)-antennkopplare, i vilka används fast anslutning och underlagsanslutningsdiodreglering i flerskiktsstruktur
EP2179472A4 (en) WIRELESS SYSTEMS COMPRISING MULTIPLE ELECTRONIC EQUIPMENT USING SIMPLIFIED MANUFACTURE AND ADAPTATION AND ASSOCIATED METHOD
EP2447334A4 (en) CONNECTION FOR AN ORGANIC PHOTOELECTRIC ELEMENT AND ORGANIC PHOTOELECTRIC ELEMENT THEREWITH
IL197174A0 (en) High torque aerial lift (htal)
EP2624297A4 (en) Power semiconductor module and method for manufacturing same
EP2533281A4 (en) Heat radiation device and electronic equipment using the same
EP2555229A4 (en) Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device
EP2135901A4 (en) CONNECTION FOR PHOTORESIST, PHOTORESIST SOLUTION AND USE OF THIS PROCESS
WO2012067415A3 (ko) 화합물 및 이를 이용한 유기전기소자, 그 단말
EP2383948A4 (en) Interface circuit, and interface system
WO2011055932A3 (ko) 유기화합물 및 이를 이용한 유기전기소자, 그 단말
WO2011108901A3 (ko) 스파이로 골격을 포함하는 스파이로 카바졸 화합물 및 이를 이용한 유기전자소자, 그 단말

Legal Events

Date Code Title Description
FG Patent granted

Ref document number: 123967

Country of ref document: FI

Kind code of ref document: B

MM Patent lapsed