FI20065275A0 - Het källa - Google Patents
Het källaInfo
- Publication number
- FI20065275A0 FI20065275A0 FI20065275A FI20065275A FI20065275A0 FI 20065275 A0 FI20065275 A0 FI 20065275A0 FI 20065275 A FI20065275 A FI 20065275A FI 20065275 A FI20065275 A FI 20065275A FI 20065275 A0 FI20065275 A0 FI 20065275A0
- Authority
- FI
- Finland
- Prior art keywords
- hot spring
- hot
- spring
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45576—Coaxial inlets for each gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/78—Heating arrangements specially adapted for immersion heating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Control Of Resistance Heating (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20065275A FI121430B (sv) | 2006-04-28 | 2006-04-28 | Het källa |
PCT/FI2007/050232 WO2007125174A1 (en) | 2006-04-28 | 2007-04-26 | Hot source |
JP2009507105A JP5053364B2 (ja) | 2006-04-28 | 2007-04-26 | 熱源装置 |
US12/297,342 US20090078203A1 (en) | 2006-04-28 | 2007-04-26 | Hot source |
RU2008146103/02A RU2439196C2 (ru) | 2006-04-28 | 2007-04-26 | Термоисточник |
EP07730719A EP2013377A1 (en) | 2006-04-28 | 2007-04-26 | Hot source |
CN2007800187675A CN101448972B (zh) | 2006-04-28 | 2007-04-26 | 热源 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20065275 | 2006-04-28 | ||
FI20065275A FI121430B (sv) | 2006-04-28 | 2006-04-28 | Het källa |
Publications (3)
Publication Number | Publication Date |
---|---|
FI20065275A0 true FI20065275A0 (sv) | 2006-04-28 |
FI20065275A FI20065275A (sv) | 2007-10-29 |
FI121430B FI121430B (sv) | 2010-11-15 |
Family
ID=36293869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20065275A FI121430B (sv) | 2006-04-28 | 2006-04-28 | Het källa |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090078203A1 (sv) |
EP (1) | EP2013377A1 (sv) |
JP (1) | JP5053364B2 (sv) |
CN (1) | CN101448972B (sv) |
FI (1) | FI121430B (sv) |
RU (1) | RU2439196C2 (sv) |
WO (1) | WO2007125174A1 (sv) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100282167A1 (en) * | 2008-12-18 | 2010-11-11 | Veeco Instruments Inc. | Linear Deposition Source |
US9598766B2 (en) | 2012-05-27 | 2017-03-21 | Air Products And Chemicals, Inc. | Vessel with filter |
CN114044626B (zh) * | 2021-12-10 | 2023-05-02 | 中国电子科技集团公司第四十六研究所 | 一种基于fcvd的光纤预制棒稀土汽相掺杂方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6047202B2 (ja) * | 1976-01-13 | 1985-10-21 | 東北大学金属材料研究所長 | 超硬高純度の配向多結晶質窒化珪素 |
JPS59156996A (ja) * | 1983-02-23 | 1984-09-06 | Koito Mfg Co Ltd | 化合物結晶膜の製造方法とその装置 |
EP0271351B1 (en) * | 1986-12-10 | 1993-06-16 | Fuji Seiki Inc. | Vacuum evaporating apparatus |
US5186120A (en) * | 1989-03-22 | 1993-02-16 | Mitsubishi Denki Kabushiki Kaisha | Mixture thin film forming apparatus |
US5204314A (en) * | 1990-07-06 | 1993-04-20 | Advanced Technology Materials, Inc. | Method for delivering an involatile reagent in vapor form to a CVD reactor |
JP2000252269A (ja) * | 1992-09-21 | 2000-09-14 | Mitsubishi Electric Corp | 液体気化装置及び液体気化方法 |
US6051276A (en) * | 1997-03-14 | 2000-04-18 | Alpha Metals, Inc. | Internally heated pyrolysis zone |
JPH11236673A (ja) * | 1998-02-20 | 1999-08-31 | Mitsubishi Electric Corp | 化学気相成長装置 |
US6210485B1 (en) * | 1998-07-21 | 2001-04-03 | Applied Materials, Inc. | Chemical vapor deposition vaporizer |
US6454860B2 (en) * | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
US6228175B1 (en) * | 1999-09-30 | 2001-05-08 | Kent Ridgeway | Apparatus for generating a wet oxygen stream for a semiconductor processing furnace |
FI118805B (sv) * | 2000-05-15 | 2008-03-31 | Asm Int | Förfarande och sammansättning för matning av en gasfasreaktant i en reaktionskammare |
US20030111014A1 (en) * | 2001-12-18 | 2003-06-19 | Donatucci Matthew B. | Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds |
JP3778851B2 (ja) * | 2001-12-25 | 2006-05-24 | Smc株式会社 | ヒーター付きポペット弁 |
US6749906B2 (en) * | 2002-04-25 | 2004-06-15 | Eastman Kodak Company | Thermal physical vapor deposition apparatus with detachable vapor source(s) and method |
US7077388B2 (en) * | 2002-07-19 | 2006-07-18 | Asm America, Inc. | Bubbler for substrate processing |
KR100889758B1 (ko) * | 2002-09-03 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 유기박막 형성장치의 가열용기 |
US7611587B2 (en) * | 2003-05-16 | 2009-11-03 | Chow Peter P | Thin-film deposition evaporator |
KR20050004379A (ko) * | 2003-07-02 | 2005-01-12 | 삼성전자주식회사 | 원자층 증착용 가스 공급 장치 |
US6837939B1 (en) * | 2003-07-22 | 2005-01-04 | Eastman Kodak Company | Thermal physical vapor deposition source using pellets of organic material for making OLED displays |
US20050022743A1 (en) * | 2003-07-31 | 2005-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Evaporation container and vapor deposition apparatus |
US7261118B2 (en) * | 2003-08-19 | 2007-08-28 | Air Products And Chemicals, Inc. | Method and vessel for the delivery of precursor materials |
US6924350B2 (en) * | 2003-08-26 | 2005-08-02 | General Electric Company | Method of separating a polymer from a solvent |
-
2006
- 2006-04-28 FI FI20065275A patent/FI121430B/sv active IP Right Grant
-
2007
- 2007-04-26 CN CN2007800187675A patent/CN101448972B/zh active Active
- 2007-04-26 US US12/297,342 patent/US20090078203A1/en not_active Abandoned
- 2007-04-26 EP EP07730719A patent/EP2013377A1/en not_active Withdrawn
- 2007-04-26 RU RU2008146103/02A patent/RU2439196C2/ru active
- 2007-04-26 WO PCT/FI2007/050232 patent/WO2007125174A1/en active Application Filing
- 2007-04-26 JP JP2009507105A patent/JP5053364B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN101448972B (zh) | 2011-11-16 |
JP2009535502A (ja) | 2009-10-01 |
FI20065275A (sv) | 2007-10-29 |
FI121430B (sv) | 2010-11-15 |
RU2008146103A (ru) | 2010-06-10 |
CN101448972A (zh) | 2009-06-03 |
RU2439196C2 (ru) | 2012-01-10 |
US20090078203A1 (en) | 2009-03-26 |
EP2013377A1 (en) | 2009-01-14 |
JP5053364B2 (ja) | 2012-10-17 |
WO2007125174A1 (en) | 2007-11-08 |
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