FI20055189A - Lähde, järjestely lähteen asentamiseksi sekä menetelmä lähteen asentamiseksi j a poistamiseksi - Google Patents

Lähde, järjestely lähteen asentamiseksi sekä menetelmä lähteen asentamiseksi j a poistamiseksi Download PDF

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Publication number
FI20055189A
FI20055189A FI20055189A FI20055189A FI20055189A FI 20055189 A FI20055189 A FI 20055189A FI 20055189 A FI20055189 A FI 20055189A FI 20055189 A FI20055189 A FI 20055189A FI 20055189 A FI20055189 A FI 20055189A
Authority
FI
Finland
Prior art keywords
source
installing
arrangement
Prior art date
Application number
FI20055189A
Other languages
English (en)
Swedish (sv)
Other versions
FI118803B (fi
FI20055189A0 (fi
Inventor
Pekka Soininen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20055189A priority Critical patent/FI118803B/fi
Publication of FI20055189A0 publication Critical patent/FI20055189A0/fi
Priority to US11/918,125 priority patent/US7922821B2/en
Priority to CN2006800135430A priority patent/CN101163815B/zh
Priority to PCT/FI2006/050159 priority patent/WO2006111618A1/en
Priority to RU2007137547/02A priority patent/RU2398048C2/ru
Priority to JP2008507108A priority patent/JP4819879B2/ja
Priority to EP06725934A priority patent/EP1871923A4/en
Publication of FI20055189A publication Critical patent/FI20055189A/fi
Application granted granted Critical
Publication of FI118803B publication Critical patent/FI118803B/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FI20055189A 2005-04-22 2005-04-22 Lähde, järjestely lähteen asentamiseksi sekä menetelmä lähteen asentamiseksi ja poistamiseksi FI118803B (fi)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI20055189A FI118803B (fi) 2005-04-22 2005-04-22 Lähde, järjestely lähteen asentamiseksi sekä menetelmä lähteen asentamiseksi ja poistamiseksi
US11/918,125 US7922821B2 (en) 2005-04-22 2006-04-21 Source, an arrangement for installing a source, and a method for installing and removing a source
CN2006800135430A CN101163815B (zh) 2005-04-22 2006-04-21 源部件、安装源部件的设备、以及安装和移走源部件的方法
PCT/FI2006/050159 WO2006111618A1 (en) 2005-04-22 2006-04-21 Source, an arrangement for installing a source, and a method for installing and removing a source
RU2007137547/02A RU2398048C2 (ru) 2005-04-22 2006-04-21 Источник для методов осаждения из газовой фазы, устройство для монтажа этого источника и способ монтажа и извлечения этого источника
JP2008507108A JP4819879B2 (ja) 2005-04-22 2006-04-21 ソース、ソースを取り付けるための構成、およびソースを取り付け取り出すための方法
EP06725934A EP1871923A4 (en) 2005-04-22 2006-04-21 SOURCE, SOURCE INSTALLATION ARRANGEMENT, AND SOURCE INSTALLATION AND REMOVAL METHOD

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20055189A FI118803B (fi) 2005-04-22 2005-04-22 Lähde, järjestely lähteen asentamiseksi sekä menetelmä lähteen asentamiseksi ja poistamiseksi
FI20055189 2005-04-22

Publications (3)

Publication Number Publication Date
FI20055189A0 FI20055189A0 (fi) 2005-04-22
FI20055189A true FI20055189A (fi) 2006-10-23
FI118803B FI118803B (fi) 2008-03-31

Family

ID=34508188

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20055189A FI118803B (fi) 2005-04-22 2005-04-22 Lähde, järjestely lähteen asentamiseksi sekä menetelmä lähteen asentamiseksi ja poistamiseksi

Country Status (7)

Country Link
US (1) US7922821B2 (fi)
EP (1) EP1871923A4 (fi)
JP (1) JP4819879B2 (fi)
CN (1) CN101163815B (fi)
FI (1) FI118803B (fi)
RU (1) RU2398048C2 (fi)
WO (1) WO2006111618A1 (fi)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2025774B1 (en) * 2006-05-19 2014-03-05 Ulvac, Inc. Vapor deposition apparatus for organic vapor deposition material and process for producing organic thin film
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
JP2012229476A (ja) * 2011-04-27 2012-11-22 Hitachi High-Technologies Corp 蒸発源および蒸着装置
KR20150023016A (ko) * 2012-06-15 2015-03-04 피코순 오와이 원자층 퇴적에 의한 기판 웹 코팅
CA3008889A1 (en) 2016-03-08 2017-10-05 Terrapower, Llc Fission product getter
CN109074883A (zh) 2016-05-20 2018-12-21 泰拉能源公司 钠-铯蒸气阱系统和方法
CN207038182U (zh) 2017-03-29 2018-02-23 泰拉能源有限责任公司 铯收集器
CA3143290A1 (en) 2019-08-23 2021-03-04 Terrapower, Llc Sodium vaporizer and method for use of sodium vaporizer
CN117822107B (zh) * 2024-03-05 2024-05-28 南京大学 一种化学气相沉积法生成拓扑绝缘体薄膜的方法及设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1588960A (en) * 1976-12-10 1981-05-07 Balfour & Co Ltd H Evaporators particularly wiped film evaporators
CH651592A5 (de) * 1982-10-26 1985-09-30 Balzers Hochvakuum Dampfquelle fuer vakuumbedampfungsanlagen.
US4506815A (en) * 1982-12-09 1985-03-26 Thiokol Corporation Bubbler cylinder and dip tube device
FR2549857B1 (fr) * 1983-07-26 1985-10-04 Allovon Michel Dispositif d'evaporation sous vide
JPS6442392A (en) * 1987-08-07 1989-02-14 Nec Corp Apparatus for molecular beam epitaxy
ES2067381B1 (es) * 1993-01-14 1995-10-16 Consejo Superior Investigacion Celula de efusion de fosforo para epitaxia de haces moleculares.
US6030458A (en) * 1997-02-14 2000-02-29 Chorus Corporation Phosphorus effusion source
US6162300A (en) * 1998-09-25 2000-12-19 Bichrt; Craig E. Effusion cell
US6447734B1 (en) * 1999-02-02 2002-09-10 The University Of Utah Research Foundation Vaporization and cracker cell apparatus
US6743473B1 (en) * 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
GB0008286D0 (en) * 2000-04-04 2000-05-24 Applied Materials Inc A vaporiser for generating feed gas for an arc chamber
US20030037569A1 (en) * 2001-03-20 2003-02-27 Mehran Arbab Method and apparatus for forming patterned and/or textured glass and glass articles formed thereby
JP3684343B2 (ja) 2001-09-25 2005-08-17 株式会社日本ビーテック 薄膜堆積用分子線源セル
US20040040502A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
JP2004288907A (ja) * 2003-03-24 2004-10-14 Victor Co Of Japan Ltd 分子線発生装置

Also Published As

Publication number Publication date
JP4819879B2 (ja) 2011-11-24
CN101163815B (zh) 2010-12-08
CN101163815A (zh) 2008-04-16
FI118803B (fi) 2008-03-31
WO2006111618A1 (en) 2006-10-26
RU2007137547A (ru) 2009-05-27
WO2006111618A8 (en) 2006-12-28
EP1871923A1 (en) 2008-01-02
RU2398048C2 (ru) 2010-08-27
US7922821B2 (en) 2011-04-12
JP2008537022A (ja) 2008-09-11
FI20055189A0 (fi) 2005-04-22
EP1871923A4 (en) 2010-05-26
US20090277390A1 (en) 2009-11-12

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