JPS6442392A - Apparatus for molecular beam epitaxy - Google Patents
Apparatus for molecular beam epitaxyInfo
- Publication number
- JPS6442392A JPS6442392A JP19765587A JP19765587A JPS6442392A JP S6442392 A JPS6442392 A JP S6442392A JP 19765587 A JP19765587 A JP 19765587A JP 19765587 A JP19765587 A JP 19765587A JP S6442392 A JPS6442392 A JP S6442392A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- molecular beam
- heater
- beam source
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To exchange easily a molecular beam source for another molecular beam source without exposing the inside of a growth chamber by transporting a crucible from a load lock chamber to a growth chamber using a transferring mechanism, and fixing the crucible to a crucible holding mechanism in a heater for heating the crucible. CONSTITUTION:A crucible 3 contg. a molecular beam source 2 is held on a transfer rod 4 after closing a gate valve 1. Then, after evacuating a load lock chamber 8 with a vacuum pump 7, the transfer rod 4 is driven after opening the valve 1, and a crucible 3 is transported into a molecular beam source chamber 9a in the growth chamber 9 and attached to a crucible holder 10 having a crucible stand 6 provided with a heat shielding plate 5. Then, the gate valve 1 is closed after returning the rod 4 to the load lock chamber 4. Thereafter, the crucible 3 is fixed in a heater 11 and a cylinder 12 for protecting the heater is provided to between the crucible 3 and the heater 11, then the molecular beam source 2 is heated by supplying electric current through the heater 11 to generate thus molecular beam in the growth chamber 9.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19765587A JPS6442392A (en) | 1987-08-07 | 1987-08-07 | Apparatus for molecular beam epitaxy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19765587A JPS6442392A (en) | 1987-08-07 | 1987-08-07 | Apparatus for molecular beam epitaxy |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6442392A true JPS6442392A (en) | 1989-02-14 |
Family
ID=16378113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19765587A Pending JPS6442392A (en) | 1987-08-07 | 1987-08-07 | Apparatus for molecular beam epitaxy |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6442392A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4819879B2 (en) * | 2005-04-22 | 2011-11-24 | ベネク・オサケユキテュア | Source, configuration for installing source, and method for installing and removing source |
US8123862B2 (en) * | 2003-08-15 | 2012-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Deposition apparatus and manufacturing apparatus |
US9559302B2 (en) | 1999-12-27 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a display device |
CN112410871A (en) * | 2020-11-20 | 2021-02-26 | 湖南烁科晶磊半导体科技有限公司 | Beam source furnace for molecular beam epitaxy with movable crucible |
-
1987
- 1987-08-07 JP JP19765587A patent/JPS6442392A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9559302B2 (en) | 1999-12-27 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a display device |
US8123862B2 (en) * | 2003-08-15 | 2012-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Deposition apparatus and manufacturing apparatus |
US8524313B2 (en) | 2003-08-15 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a device |
JP4819879B2 (en) * | 2005-04-22 | 2011-11-24 | ベネク・オサケユキテュア | Source, configuration for installing source, and method for installing and removing source |
CN112410871A (en) * | 2020-11-20 | 2021-02-26 | 湖南烁科晶磊半导体科技有限公司 | Beam source furnace for molecular beam epitaxy with movable crucible |
EP4190946A4 (en) * | 2020-11-20 | 2023-12-27 | Hunan Semicorepi Semiconductor Technology Co., Ltd. | Crucible movable beam source furnace for molecular-beam epitaxy |
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