JPS6442392A - Apparatus for molecular beam epitaxy - Google Patents

Apparatus for molecular beam epitaxy

Info

Publication number
JPS6442392A
JPS6442392A JP19765587A JP19765587A JPS6442392A JP S6442392 A JPS6442392 A JP S6442392A JP 19765587 A JP19765587 A JP 19765587A JP 19765587 A JP19765587 A JP 19765587A JP S6442392 A JPS6442392 A JP S6442392A
Authority
JP
Japan
Prior art keywords
crucible
molecular beam
heater
beam source
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19765587A
Other languages
Japanese (ja)
Inventor
Hiroshi Iwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19765587A priority Critical patent/JPS6442392A/en
Publication of JPS6442392A publication Critical patent/JPS6442392A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To exchange easily a molecular beam source for another molecular beam source without exposing the inside of a growth chamber by transporting a crucible from a load lock chamber to a growth chamber using a transferring mechanism, and fixing the crucible to a crucible holding mechanism in a heater for heating the crucible. CONSTITUTION:A crucible 3 contg. a molecular beam source 2 is held on a transfer rod 4 after closing a gate valve 1. Then, after evacuating a load lock chamber 8 with a vacuum pump 7, the transfer rod 4 is driven after opening the valve 1, and a crucible 3 is transported into a molecular beam source chamber 9a in the growth chamber 9 and attached to a crucible holder 10 having a crucible stand 6 provided with a heat shielding plate 5. Then, the gate valve 1 is closed after returning the rod 4 to the load lock chamber 4. Thereafter, the crucible 3 is fixed in a heater 11 and a cylinder 12 for protecting the heater is provided to between the crucible 3 and the heater 11, then the molecular beam source 2 is heated by supplying electric current through the heater 11 to generate thus molecular beam in the growth chamber 9.
JP19765587A 1987-08-07 1987-08-07 Apparatus for molecular beam epitaxy Pending JPS6442392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19765587A JPS6442392A (en) 1987-08-07 1987-08-07 Apparatus for molecular beam epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19765587A JPS6442392A (en) 1987-08-07 1987-08-07 Apparatus for molecular beam epitaxy

Publications (1)

Publication Number Publication Date
JPS6442392A true JPS6442392A (en) 1989-02-14

Family

ID=16378113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19765587A Pending JPS6442392A (en) 1987-08-07 1987-08-07 Apparatus for molecular beam epitaxy

Country Status (1)

Country Link
JP (1) JPS6442392A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4819879B2 (en) * 2005-04-22 2011-11-24 ベネク・オサケユキテュア Source, configuration for installing source, and method for installing and removing source
US8123862B2 (en) * 2003-08-15 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and manufacturing apparatus
US9559302B2 (en) 1999-12-27 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a display device
CN112410871A (en) * 2020-11-20 2021-02-26 湖南烁科晶磊半导体科技有限公司 Beam source furnace for molecular beam epitaxy with movable crucible

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9559302B2 (en) 1999-12-27 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a display device
US8123862B2 (en) * 2003-08-15 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and manufacturing apparatus
US8524313B2 (en) 2003-08-15 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a device
JP4819879B2 (en) * 2005-04-22 2011-11-24 ベネク・オサケユキテュア Source, configuration for installing source, and method for installing and removing source
CN112410871A (en) * 2020-11-20 2021-02-26 湖南烁科晶磊半导体科技有限公司 Beam source furnace for molecular beam epitaxy with movable crucible
EP4190946A4 (en) * 2020-11-20 2023-12-27 Hunan Semicorepi Semiconductor Technology Co., Ltd. Crucible movable beam source furnace for molecular-beam epitaxy

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