FI129826B - Förfarande för framställning av en hög resistiv kiselskiva för en hybridsubstratkonstruktion - Google Patents

Förfarande för framställning av en hög resistiv kiselskiva för en hybridsubstratkonstruktion Download PDF

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Publication number
FI129826B
FI129826B FI20205989A FI20205989A FI129826B FI 129826 B FI129826 B FI 129826B FI 20205989 A FI20205989 A FI 20205989A FI 20205989 A FI20205989 A FI 20205989A FI 129826 B FI129826 B FI 129826B
Authority
FI
Finland
Prior art keywords
wafer
polishing
thickness
grinding
front surface
Prior art date
Application number
FI20205989A
Other languages
English (en)
Finnish (fi)
Other versions
FI20205989A1 (sv
Inventor
Samuli Sievänen
Päivi Sievilä
Karri Mannermaa
Jukka-Pekka Lähteenmäki
Atte Haapalinna
Joel Salmi
Original Assignee
Okmetic Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okmetic Oy filed Critical Okmetic Oy
Priority to FI20205989A priority Critical patent/FI129826B/sv
Priority to PCT/FI2021/050664 priority patent/WO2022074297A1/en
Priority to CN202180069096.5A priority patent/CN116325084A/zh
Priority to EP21877067.5A priority patent/EP4226411A1/en
Priority to KR1020237012366A priority patent/KR20230080428A/ko
Priority to JP2023520210A priority patent/JP2023549029A/ja
Publication of FI20205989A1 publication Critical patent/FI20205989A1/sv
Application granted granted Critical
Publication of FI129826B publication Critical patent/FI129826B/sv

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
FI20205989A 2020-10-08 2020-10-08 Förfarande för framställning av en hög resistiv kiselskiva för en hybridsubstratkonstruktion FI129826B (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FI20205989A FI129826B (sv) 2020-10-08 2020-10-08 Förfarande för framställning av en hög resistiv kiselskiva för en hybridsubstratkonstruktion
PCT/FI2021/050664 WO2022074297A1 (en) 2020-10-08 2021-10-08 Manufacture method of a high-resistivity silicon handle wafer for enabling a formation of a hybrid substrate structure
CN202180069096.5A CN116325084A (zh) 2020-10-08 2021-10-08 制造能够形成混合衬底结构的高电阻率硅处置晶片的方法
EP21877067.5A EP4226411A1 (en) 2020-10-08 2021-10-08 Manufacture method of a high-resistivity silicon handle wafer for enabling a formation of a hybrid substrate structure
KR1020237012366A KR20230080428A (ko) 2020-10-08 2021-10-08 하이브리드 기판 구조체의 형성을 가능하게 하기 위한 고저항 실리콘 핸들 웨이퍼의 제조 방법
JP2023520210A JP2023549029A (ja) 2020-10-08 2021-10-08 ハイブリッド基板構造の形成を可能にするための高抵抗シリコンハンドルウェハの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20205989A FI129826B (sv) 2020-10-08 2020-10-08 Förfarande för framställning av en hög resistiv kiselskiva för en hybridsubstratkonstruktion

Publications (2)

Publication Number Publication Date
FI20205989A1 FI20205989A1 (sv) 2022-04-09
FI129826B true FI129826B (sv) 2022-09-15

Family

ID=81125454

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20205989A FI129826B (sv) 2020-10-08 2020-10-08 Förfarande för framställning av en hög resistiv kiselskiva för en hybridsubstratkonstruktion

Country Status (6)

Country Link
EP (1) EP4226411A1 (sv)
JP (1) JP2023549029A (sv)
KR (1) KR20230080428A (sv)
CN (1) CN116325084A (sv)
FI (1) FI129826B (sv)
WO (1) WO2022074297A1 (sv)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69127582T2 (de) * 1990-05-18 1998-03-26 Fujitsu Ltd Verfahren zur Herstellung eines Halbleitersubstrates und Verfahren zur Herstellung einer Halbleiteranordnung unter Verwendung dieses Substrates
JP2000114216A (ja) * 1998-10-01 2000-04-21 Sumitomo Metal Ind Ltd 半導体ウェーハの製造方法
FI130149B (sv) * 2013-11-26 2023-03-15 Okmetic Oyj Högresistivt kiselsubstrat med minskad radiofrekvensförlust för en radiofrekvensintegrerad passiv anordning

Also Published As

Publication number Publication date
FI20205989A1 (sv) 2022-04-09
JP2023549029A (ja) 2023-11-22
EP4226411A1 (en) 2023-08-16
CN116325084A (zh) 2023-06-23
KR20230080428A (ko) 2023-06-07
WO2022074297A1 (en) 2022-04-14

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