FI123205B - Kretsmodul och förfarande för tillverkning av en kretsmodul - Google Patents
Kretsmodul och förfarande för tillverkning av en kretsmodul Download PDFInfo
- Publication number
- FI123205B FI123205B FI20085443A FI20085443A FI123205B FI 123205 B FI123205 B FI 123205B FI 20085443 A FI20085443 A FI 20085443A FI 20085443 A FI20085443 A FI 20085443A FI 123205 B FI123205 B FI 123205B
- Authority
- FI
- Finland
- Prior art keywords
- layer
- contact
- component
- copper
- circuit module
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 126
- 238000004519 manufacturing process Methods 0.000 title claims description 77
- 239000010410 layer Substances 0.000 claims description 376
- 239000004020 conductor Substances 0.000 claims description 131
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 118
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 91
- 239000010949 copper Substances 0.000 claims description 90
- 229910052802 copper Inorganic materials 0.000 claims description 88
- 229910052751 metal Inorganic materials 0.000 claims description 79
- 239000002184 metal Substances 0.000 claims description 79
- 239000000463 material Substances 0.000 claims description 75
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 63
- 229910052725 zinc Inorganic materials 0.000 claims description 62
- 239000011701 zinc Substances 0.000 claims description 62
- 229910052759 nickel Inorganic materials 0.000 claims description 57
- 229910052782 aluminium Inorganic materials 0.000 claims description 54
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 54
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- 150000002739 metals Chemical class 0.000 claims description 12
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 238000012364 cultivation method Methods 0.000 claims description 5
- 239000013047 polymeric layer Substances 0.000 claims description 4
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- 241000531908 Aramides Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
- H05K1/188—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or attaching to a structure having a conductive layer, e.g. a metal foil, such that the terminals of the component are connected to or adjacent to the conductive layer before embedding, and by using the conductive layer, which is patterned after embedding, at least partially for connecting the component
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
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- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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Claims (34)
1. Förfarande för tillverkning av en kretsmodul, vid vilket förfarande en ledarfilm (12) väljs, en komponent (6) väljs, som omfattar kontaktomräden (7), vilkas material in-5 nehäller en första metall, komponenten (6) fästs vid ledarfilmen (12) medelst ett polymerskikt (25), ett isoleringsskikt (1) tili verkas kring den vid ledarfilmen (12) fästa komponenten (6), kontakthäl (18, 28) upptas i polymerskiktet (25) vid positionema för kontakt-10 omrädena (7) pä sä sätt, att kontaktytan (Acont i) mellan varjc kontakthäl (18, 28) och motsvarande kontaktomrade (7) är mindre än kontaktomrädets (7) yta (Apad), och ett mellanskikt (2) odlas ätminstone pä ytan av kontaktomrädena (7) i kon-takthälen (18, 28), vilket mellanskikt innehäller ätminstone en tredje metall, 15 ett skikt (32) av en andra metall odlas, vilket skikt (32) är i kontakt med mellanskiktets (2) yta och sträcker sig utmed de ledare (22) som tillverkas, och ledare (22) bildas genom konfiguration av ledarfilmen (12) och, sävida det cm behövs, även mellanskiktet (2) pä ytan av ledarfilmen (12) och/eller skiktet (32) av cm en andra metall, o cl, 20 kännetecknatavatt g i ledarfilmen (12) utformas kontaktöppningar (8) för tillverkning av kontakt- co element, och m o kontakthälets djup (H) är lägre eller det samma som kontakthälets maximala ^ bredd (WMax)· 25
2. Förfarande i enlighet med patentkrav 1, kännetecknat av att 44 kontaktöppningama (8) utformas innan komponenten (6) fästs, komponenten (6) fästs vid ledarfilmen (12), som är försedd med kontakt-öppningar (8), och efter fästningen av komponenten (6) öppnas kontakthälen (18, 28) via kon-5 taktöppningama (8).
3. Förfarande i enlighet med patentkrav 2, kännetecknat avatt kontakthälen (18, 28) öppnas via kontaktöppningama (8) medelst en CXVlaser, varvid ledarfilmen (12) används som en mask.
4. Förfarande i enlighet med nägot av patentkraven 1-3, kännetecknat 10 av att den första metallen utgörs av aluminium, den andra metallen av koppar och den tredje metallen innehäller ätminstone en av metalleina zink och nickel.
5. Förfarande i enlighet med nägot av patentkraven 1-3, kännetecknat av att den första metallen utgörs av guld, den andra metallen av koppar och den tredje metallen av nickel. 15
6. Förfarande i enlighet med nägot av patentkraven 1-4, kännetecknat av att mellanskiktet (2) omfattar ett zinkinnehällande skikt (33), som tillverkas medelst en dubbel zinkatprocess.
7. Förfarande i enlighet med nägot av patentkraven 1-6, kännetecknat (M av att mellanskiktet (2) omfattar ett nickelinnehällande skikt (34), som tillverkas ^ 20 medelst ett kemiskt nickelodlingsförfarande. cp (-J)
8. Förfarande i enlighet med nägot av patentkraven 1-7, kännetecknat x av att mellanskiktet (2) omfattar ett kopparinnehällande skikt (35), som tillverkas cc medelst ett kemiskt kopparodlingsförfarande. CO g
9. Förfarande i enlighet med nägot av patentkraven 1-8, kännetecknat o 25 av att isoleringsskiktet (1) tillverkas pä sä sätt, att 45 ätminstone en isoleringsfilm (11) innehällande ett fibermaterial (19) och en förhärdad polymer väljs, ett hai för komponenten (6) upptas i varjc isoleringsfilm (11) innehällande ett fibermaterial (19), och 5 isoleringsfilmen (11) eller isoleringsfilmema (11) lamineras samman med ledarfilmen (12) och därtill anslutna strukturer.
10. Förfarande i enlighet med nägot av patentkraven 1-9, kännetecknat av att ledarfilmens (12) yta, vid vilken komponenten (6) fasts, omfattar ett enhetligt isoleringsskikt (13). 10
11. Förfarande i enlighet med nägot av patentkraven 1-10, kännetecknat av att en avständsbricka (15) anordnas mellan komponenten (6) och ledarfilmen (12).
12. Förfarande i enlighet med nägot av patentkraven 1-11, kännetecknat av att, förutom komponenten (6), ätminstone en annan komponent (16) anordnas i kretsmodulen pä sä sätt, att den första och den andra komponentens fästningssätt 15 avviker ffän varandra i fräga om ätminstone en egenskap hos polymerskikten (25).
13. Förfarande i enlighet med nägot av patentkraven 1-12, kännetecknat av att den komponent (6) som skall fästas utgörs av en komponent utan knottror.
14. Kretsmodul, omfattande (M 5 ett isoleringsskikt (1), CM o 20 ätminstone en komponent (6) inne i isoleringsskiktet (1), vilken komponent ^ omfattar kontaktomräden (7), vilkas material innehäller en första metall, X tr ledare (22) pä ytan av isoleringsskiktet (1), vilka omfattar ätminstone ett CO ^ första skikt (12) och ett andra skikt (32) pä sä sätt, att ätminstone det andra skiktet m o (32) innehäller en andra metall, och o CM 46 kontaktelement mellan kontaktomrädena (7) och ledama (22) för att bilda elektriska kontakter, vilka kontaktelement omfattar ett mellanskikt (2), som inne-häller en tredje metall, pä ytan av kontaktomrädets (7) material, varvid den första, den andra och den tredje metallen utgörs av olika metaller, 5 och kontaktytan (Acont i) mellan mellanskiktet (2) och kontaktomrädet (7) är mindre än kontaktomrädets (7) yta (Apad), kännetecknad av att kontaktelementets höjd (H) är lägre än eller den samma som kontaktelementets maximala bredd ( Wmax).
15. Kretsmodul i enlighet med patentkrav 14, kännetecknad av att den första metallen utgörs av aluminium, den andra metallen av koppar och den tredje metallen innehäller ätminstone en av metallema zink och nickel.
16. Kretsmodul i enlighet med patentkrav 14, kännetecknad av att den första metallen utgörs av guld, den andra metallen av koppar och den tredje metallen 15 av nickel.
17. Kretsmodul i enlighet med patentkrav 14 eller 15, kännetecknad av att kontaktomrädenas (7) material utgörs huvudsakligen av aluminium.
18. Kretsmodul i enlighet med patentkrav 14, 15 eller 17, kännetecknad cm av att mellanskiktet (2) omfattar ett zinkinnehällande skikt (33). δ CM 4 20
19. Kretsmodul i enlighet med patentkrav 18, kännetecknad av att o o) mellanskiktet (2) omfattar, förutom det zinkinnehällande skiktet (33), ätminstone ett x andra mellanmetallskikt (34, 35). cc CL co
20. Kretsmodul i enlighet med patentkrav 19, kännetecknad av att det ät- g minstone ena andra mellanmetallskiktet (35) utgörs av koppar odlad medelst ett o o 25 kemiskt odlingsförfarande. 47
21. Kretsmodul i enlighet med patentkrav 20, kännetecknad av att mellanmetallskiktet (2) omfattar ätminstone ett skikt (34) av nickel och/eller en blandning av nickel och aluminium mellan det zinkinnehallande skiktet (33) och kopparskiktet (35).
22. Kretsmodul i enlighet med nägot av patentkraven 18-21, känne tecknad av att det zinkinnehallande skiktet innehäller zink, koppar, nickel och jam.
23. Kretsmodul i enlighet med nägot av patentkraven 14-22, kännetecknad av att en del av mellanskiktet (2) sträcker sig utmed kontaktelementens 10 sidoväggar mellan kontaktomradena (7) och ledama (22).
24. Kretsmodul i enlighet med patentkrav 23, kännetecknad avatt kontaktelementen omfattar en medelst ett elektrokemiskt odlingsforfarande tillverkad kopparkäma (29), som i riktningen för sidoväggama och komponenten (6) begränsas av mellanskiktet (2), och i riktningen för ledaren (22) ansluts kontinuerligt, d.v.s. 15 utan gränsyta, till materialet hos ledarens (22) andra skikt (32).
25. Kretsmodul i enlighet med patentkrav 23 eller 24, kännetecknad av att den del (37) av mellanskiktet (2) som sträcker sig utmed kontaktelementens sidoväggar innehäller koppar odlad medelst ett kemiskt odlingsforfarande eller nickel odlad medelst ett kemiskt odlingsforfarande. ^ 20
26. Kretsmodul i enlighet med nägot av patentkraven 14 - 25, känne- S w tecknadavatt ledama (32) omfattar o en ett första skikt (12) av koppar pä ytan av isoleringsskiktet (1), och £ ett andra skikt (32) av koppar pä ytan av det första kopparskiktet. co
^ 27. Kretsmodul i enlighet med nägot av patentkraven 14-25, känne in o 25 t e c k n a d av att ledama (32) omfattar o (M ett första skikt (12) av koppar pä ytan av isoleringsskiktet (1), 48 ett mellanskikt (2) pä ytan av det första kopparskiktet, och ett andra skikt (32) av koppar pä ytan av mellanskiktet.
28. Kretsmodul i enlighet med patentkrav 27, k ä n n e t e e k n a d av att mellanskiktets (2) del mellan det första och andra kopparskiktet omfattar koppar 5 odlad medelst ett kemiskt odlingsförfarande eller nickel odlad medelst ett kemiskt odlingsförfarande.
29. Kretsmodul i enlighet med nagot av patentkraven 14-28, k ä n n βίε e k n a d av att bredden ( Wcont) av kontaktytan mellan kontaktelementet och komponentens kontaktomräde (7) är 0-20 % mindre än kontaktelementets maximala 10 bredd ( Wmax) i samma riktning.
30. Kretsmodul i enlighet med nagot av patentkraven 14-29, k ä n n e -tecknad av att isoleringsskiktet (1) innehäller ätminstone ett skikt fibermaterial (19), väri fibermaterialet (19) uppvisar en öppning for komponenten (6), samt ett enhetligt polymerskikt, som är fäst vid fibermaterialet (19) och komponenten (6).
31. Kretsmodul i enlighet med nagot av patentkraven 14-30, känne- tecknad av att den omfattar ett polymerskikt (25) mellan ledama (22) och komponenten (6), vilket polymerskikt uppvisar kontakthäl (18, 28) för kontakt-elementen, och väri kontaktelementen fiillständigt fyller kontakthälen (18, 28).
32. Kretsmodul i enlighet med patentkrav 31, kännetecknad av att CM o 20 polymerskiktet (25) mellan ledama (22) och komponenten (6) omfattar ett första (15) CM 4 och ett andra polymerskikt (5), väri det första polymerskiktet (15) utgörs av en första O 05 polymer och det andra polymerskiktet (5) utgörs av härdat lim. x
£ 33. Kretsmodul i enlighet med patentkrav 32, kännetecknad av att det pj första polymerskiktet (15) och det andra polymerskiktet (5) är lokala pä sä sätt, att de g 25 existerar väsentligen endast vid komponenten (6). o o
34. Kretsmodul i enlighet med nägot av patentkraven 14 - 33, kännetecknad av att komponenten omfattar ett passiveringsskikt (9) pä ytan av 49 komponenten och kontaktomrädena (7) är belägna inne i öppningar i passiverings-skiktet (9), varvid mellanskiktet (2) sträcker sig genom öppningen i passiverings-skiktet (9). (M δ (M o σ> X cn CL CO sj- sj- in oo o o (M
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
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FI20085443A FI123205B (sv) | 2008-05-12 | 2008-05-12 | Kretsmodul och förfarande för tillverkning av en kretsmodul |
GB1021002A GB2472953A (en) | 2008-05-12 | 2009-05-11 | Circuit module and method of manufacturing the same |
JP2011508961A JP2011523773A (ja) | 2008-05-12 | 2009-05-11 | 回路モジュールおよびその製造方法 |
US12/990,785 US8699233B2 (en) | 2008-05-12 | 2009-05-11 | Circuit module and method of manufacturing the same |
PCT/FI2009/050383 WO2009138560A1 (en) | 2008-05-12 | 2009-05-11 | Circuit module and method of manufacturing the same |
CN2009801172483A CN102027585B (zh) | 2008-05-12 | 2009-05-11 | 电路模块及其制造方法 |
KR1020107025126A KR20110011614A (ko) | 2008-05-12 | 2009-05-11 | 회로모듈 및 제조방법 |
US14/231,758 US9107324B2 (en) | 2008-05-12 | 2014-04-01 | Circuit module and method of manufacturing the same |
US14/821,818 US9324647B2 (en) | 2008-05-12 | 2015-08-10 | Circuit module and method of manufacturing the same |
US15/084,530 US9883587B2 (en) | 2008-05-12 | 2016-03-30 | Circuit module and method of manufacturing the same |
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FI20085443 | 2008-05-12 | ||
FI20085443A FI123205B (sv) | 2008-05-12 | 2008-05-12 | Kretsmodul och förfarande för tillverkning av en kretsmodul |
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FI20085443A0 FI20085443A0 (sv) | 2008-05-12 |
FI20085443A FI20085443A (sv) | 2009-11-13 |
FI123205B true FI123205B (sv) | 2012-12-31 |
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FI20085443A FI123205B (sv) | 2008-05-12 | 2008-05-12 | Kretsmodul och förfarande för tillverkning av en kretsmodul |
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US (4) | US8699233B2 (sv) |
JP (1) | JP2011523773A (sv) |
KR (1) | KR20110011614A (sv) |
CN (1) | CN102027585B (sv) |
FI (1) | FI123205B (sv) |
GB (1) | GB2472953A (sv) |
WO (1) | WO2009138560A1 (sv) |
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FI123205B (sv) | 2008-05-12 | 2012-12-31 | Imbera Electronics Oy | Kretsmodul och förfarande för tillverkning av en kretsmodul |
FI122217B (sv) * | 2008-07-22 | 2011-10-14 | Imbera Electronics Oy | Multichippaket och framställningsförfarande |
JP2012124397A (ja) * | 2010-12-10 | 2012-06-28 | Cmk Corp | 部品内蔵型多層プリント配線板 |
US8923008B2 (en) * | 2011-03-08 | 2014-12-30 | Ibiden Co., Ltd. | Circuit board and method for manufacturing circuit board |
DE102011107958B4 (de) * | 2011-07-20 | 2020-09-24 | Wilo Se | Überschlagsschutz für eine Anordnung eines Halbleiterbauelements auf einem Substrat |
KR20140089385A (ko) * | 2011-10-31 | 2014-07-14 | 메이코 일렉트로닉스 컴파니 리미티드 | 부품내장기판의 제조방법 및 이 방법을 이용하여 제조한 부품내장기판 |
JP5688162B2 (ja) * | 2011-11-08 | 2015-03-25 | 株式会社メイコー | 部品内蔵基板の製造方法及びこの方法を用いて製造した部品内蔵基板 |
US9355990B2 (en) * | 2012-09-11 | 2016-05-31 | Meiko Electronics Co., Ltd. | Manufacturing method of device embedded substrate and device embedded substrate manufactured by this method |
US9851745B2 (en) * | 2012-09-12 | 2017-12-26 | Hewlett-Packard Development Company, L.P. | Latch for a computer case |
CN104584210B (zh) * | 2012-12-21 | 2017-09-26 | 松下知识产权经营株式会社 | 电子部件封装件及其制造方法 |
CN104584208B (zh) * | 2012-12-21 | 2018-01-30 | 松下知识产权经营株式会社 | 电子部件封装以及其制造方法 |
JP5624697B1 (ja) | 2012-12-21 | 2014-11-12 | パナソニック株式会社 | 電子部品パッケージおよびその製造方法 |
JP5624700B1 (ja) | 2012-12-21 | 2014-11-12 | パナソニック株式会社 | 電子部品パッケージおよびその製造方法 |
US9825209B2 (en) | 2012-12-21 | 2017-11-21 | Panasonic Intellectual Property Management Co., Ltd. | Electronic component package and method for manufacturing the same |
JPWO2014118916A1 (ja) * | 2013-01-30 | 2017-01-26 | 株式会社メイコー | 部品内蔵基板の製造方法 |
EP3117461A1 (en) * | 2014-03-13 | 2017-01-18 | Philips Lighting Holding B.V. | Lighting device and method for producing a lighting device |
GB2524791B (en) | 2014-04-02 | 2018-10-03 | At & S Austria Tech & Systemtechnik Ag | Placement of component in circuit board intermediate product by flowable adhesive layer on carrier substrate |
KR101640751B1 (ko) | 2014-09-05 | 2016-07-20 | 대덕전자 주식회사 | 인쇄회로기판 및 제조방법 |
JP6862087B2 (ja) | 2015-12-11 | 2021-04-21 | 株式会社アムコー・テクノロジー・ジャパン | 配線基板、配線基板を有する半導体パッケージ、およびその製造方法 |
CN109425814B (zh) * | 2017-09-01 | 2021-09-10 | 中华精测科技股份有限公司 | 探针组件及其探针结构 |
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FI123205B (sv) | 2008-05-12 | 2012-12-31 | Imbera Electronics Oy | Kretsmodul och förfarande för tillverkning av en kretsmodul |
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2008
- 2008-05-12 FI FI20085443A patent/FI123205B/sv active IP Right Grant
-
2009
- 2009-05-11 JP JP2011508961A patent/JP2011523773A/ja not_active Withdrawn
- 2009-05-11 GB GB1021002A patent/GB2472953A/en not_active Withdrawn
- 2009-05-11 WO PCT/FI2009/050383 patent/WO2009138560A1/en active Application Filing
- 2009-05-11 US US12/990,785 patent/US8699233B2/en active Active
- 2009-05-11 CN CN2009801172483A patent/CN102027585B/zh active Active
- 2009-05-11 KR KR1020107025126A patent/KR20110011614A/ko not_active Application Discontinuation
-
2014
- 2014-04-01 US US14/231,758 patent/US9107324B2/en active Active
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- 2015-08-10 US US14/821,818 patent/US9324647B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
JP2011523773A (ja) | 2011-08-18 |
CN102027585B (zh) | 2013-07-10 |
GB201021002D0 (en) | 2011-01-26 |
US20150348878A1 (en) | 2015-12-03 |
FI20085443A (sv) | 2009-11-13 |
GB2472953A (en) | 2011-02-23 |
US20140210090A1 (en) | 2014-07-31 |
US8699233B2 (en) | 2014-04-15 |
US9107324B2 (en) | 2015-08-11 |
US9324647B2 (en) | 2016-04-26 |
US20110061909A1 (en) | 2011-03-17 |
KR20110011614A (ko) | 2011-02-08 |
CN102027585A (zh) | 2011-04-20 |
US20160212855A1 (en) | 2016-07-21 |
FI20085443A0 (sv) | 2008-05-12 |
WO2009138560A1 (en) | 2009-11-19 |
US9883587B2 (en) | 2018-01-30 |
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