FI121962B - Förfarande för framställning av hög-luminans fosfor - Google Patents

Förfarande för framställning av hög-luminans fosfor Download PDF

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Publication number
FI121962B
FI121962B FI991732A FI19991732A FI121962B FI 121962 B FI121962 B FI 121962B FI 991732 A FI991732 A FI 991732A FI 19991732 A FI19991732 A FI 19991732A FI 121962 B FI121962 B FI 121962B
Authority
FI
Finland
Prior art keywords
host material
growth
thin film
pbx
reaction
Prior art date
Application number
FI991732A
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English (en)
Finnish (fi)
Other versions
FI19991732A (sv
Inventor
Sun-Jin Yun
Yong-Shin Kim
Sang-Hee Park
Kyoung-Ik Cho
Dong-Sung Ma
Original Assignee
Korea Electronics Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Korea Electronics Telecomm filed Critical Korea Electronics Telecomm
Publication of FI19991732A publication Critical patent/FI19991732A/sv
Application granted granted Critical
Publication of FI121962B publication Critical patent/FI121962B/sv

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16D—COUPLINGS FOR TRANSMITTING ROTATION; CLUTCHES; BRAKES
    • F16D65/00—Parts or details
    • F16D65/38—Slack adjusters
    • F16D65/40—Slack adjusters mechanical
    • F16D65/42—Slack adjusters mechanical non-automatic
    • F16D65/46—Slack adjusters mechanical non-automatic with screw-thread and nut
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G21/00—Compounds of lead
    • C01G21/21—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16D—COUPLINGS FOR TRANSMITTING ROTATION; CLUTCHES; BRAKES
    • F16D65/00—Parts or details
    • F16D65/14—Actuating mechanisms for brakes; Means for initiating operation at a predetermined position
    • F16D65/28—Actuating mechanisms for brakes; Means for initiating operation at a predetermined position arranged apart from the brake
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
  • Chemical Vapour Deposition (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)

Claims (11)

1. Förfarande för framstäflning av ett lysämnesskikt kärsne-tecknat avattdetomfattarsteg, ivilka 5 bildas ett värdmaterial genom användning av en odlingsreaktion för värdmateriaiei, varvid värdmateriatet innehäller ett grundämne i grupp ii (M = Ca, Sr, Zn, Ba eller Mg) och ett grundämne i grupp VI (X = S eiler Se); tillsätts en Pb2+-jon i värdmateriatet som en Ijusemitterande central-jon, varvid tillsätfningssteget innehäller ett steg, där PbX bildas genom att 10 bringa H2X (X = S eller Se) att reagera med en Pb-prekursor som vaits bland tetraarylbly och alkylarylbly, varvid lysämnesskiktets Pb2+~half är i omrädet 0,2 - 4,0 mol-% och PbX-tunnfilmens odlingshastighet är i omrädet 0.005 - 0,6 Ä/cykel.
2. Förfarande enligt patentkrav 1, kännetecknat av att som 15 tetraarylbiys och alkylarylblys aikylgrupp eller arylgrupp väljs minst en bland metyl-, etyl-, propyi-, isopropyl-, cyklohexyl-, fenyl- och bensylgruppen.
3. Förfarande enligt patentkrav 1, kännetecknat av att värd-materiaiet är en ll-VI-förening, som bildas genom att bringa att reagera en M-prekursor och H2X (X = S eller Se), 20
4, Förfarande enligt patentkrav 1, k ä n n e t e c k n a t av att od- lingsreaktionen och reaktionen, där man tiilsätter en Ijusemitterande centraljon, förverkligas samtidigt och Pb2+-jonhalten regleras med ett förhällande mellan M~prekursorhalten och Pb-prekursorhalten.
5. Förfarande enligt patentkrav 1, k ä n n e t e c k n a t av att od~ 25 lingsreaktionen och reaktionen, där man tiilsätter en Ijusemitterande centraljon, förverkligas turvis. 5
6. Förfarande enligt patentkrav 5, kännetecknat av att det CM ^ dessutom omfattar ett steg för att bilda en lysämnestunnflim med tjockleken [N ° x (A + B)3 Ä, varvid detta steg förverkligas genom att upprepa N ganger föfjan- o 30 de steg: | odias värdmaterialomrädets tunnfilm tili tjockleken A A genom an- <M vändning av värdmaterialets odlingsreaktion; odias PbX (X = S eller Se)-iunn- filmen tili tjockleken B A genom användning av den Ijusemitterande centraljo-σ> nens tiflsättningsreaktion. 26
7. Förfarande enligt patentkrav 6, kännetecknat avail Pb2+~ jonhalten regSeras med förhallandet mailan den i värdmaterialomradet radande tunnfilmens tjocktek och PbX-tunnfilmens tjockfek.
8. Förfarande enligt patentkrav 8, kännetecknat avatt PbX-5 tunnfilmens tjockfek (B A) är i omrädet 0,005 - 0,6 A.
9. Förfarande enligt patentkrav 6, k ä n n e t e c k n a t av att en mängd "a" odiingsreaktionscykler för värdmaterialet och en mängd "b" odlings-reaktfonscykler för det Ijusemitterande omradet förverkiigas separat, varvid an-telet upprepningsgänger är N, 10
10. Förfarande enligt patentkrav 9, kännetecknat av att ifall reaktionstemperaturen är minst 350 °C, är antalet "b" odiingsreaktionscykler för det Ijusemitterande omrädet högst 2.
11. Förfarande enligt patentkrav 1, k ä n n e t e c k n a t av att od-lingsreaktionen och reaktionen, där den Ijusemitterande centrafjonen tiiisätts, 15 förverkiigas vid en temperatur i omradet 150 - 500 °C. o (M in o i o X en CL (M CO Is- 5) σ>
FI991732A 1998-08-14 1999-08-16 Förfarande för framställning av hög-luminans fosfor FI121962B (sv)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR19980033090 1998-08-14
KR19980033090 1998-08-14
KR1019990026897A KR100327105B1 (ko) 1998-08-14 1999-07-05 고휘도 형광체 및 그 제조방법
KR19990026897 1999-07-05

Publications (2)

Publication Number Publication Date
FI19991732A FI19991732A (sv) 2000-02-14
FI121962B true FI121962B (sv) 2011-06-30

Family

ID=26634016

Family Applications (1)

Application Number Title Priority Date Filing Date
FI991732A FI121962B (sv) 1998-08-14 1999-08-16 Förfarande för framställning av hög-luminans fosfor

Country Status (3)

Country Link
JP (1) JP2000138094A (sv)
KR (1) KR100327105B1 (sv)
FI (1) FI121962B (sv)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6899961B2 (en) * 1999-12-15 2005-05-31 Samsung Sdi Co., Ltd. Organic electroluminescence device
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
KR100392363B1 (ko) * 2000-12-26 2003-07-22 한국전자통신연구원 형광체 및 그 제조방법
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
KR100494843B1 (ko) * 2002-11-01 2005-06-14 한국전자통신연구원 란탄족 이온이 도핑된 2족 금속황화물 형광층 제조 방법
WO2006045885A1 (en) * 2004-10-26 2006-05-04 Asm International N.V. Method of depositing lead containing oxides films

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8909011D0 (en) * 1989-04-20 1989-06-07 Friend Richard H Electroluminescent devices
JPH0645073A (ja) * 1992-07-23 1994-02-18 Idemitsu Kosan Co Ltd 有機ｅｌ素子
JPH09298089A (ja) * 1996-05-02 1997-11-18 Oki Electric Ind Co Ltd 正孔輸送材料及び有機エレクトロルミネッセンス素子
FI100758B (sv) * 1996-09-11 1998-02-13 Planar Internat Oy Ltd Sätt att bilda ett luminescensskikt av ZnS:Mn för tunnfilmselektrolumi nescenskomponenter

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FI19991732A (sv) 2000-02-14
JP2000138094A (ja) 2000-05-16
KR100327105B1 (ko) 2002-03-09
KR20000016902A (ko) 2000-03-25

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