FI118343B - Laite ohutkalvojen valmistamiseksi - Google Patents
Laite ohutkalvojen valmistamiseksi Download PDFInfo
- Publication number
- FI118343B FI118343B FI992798A FI19992798A FI118343B FI 118343 B FI118343 B FI 118343B FI 992798 A FI992798 A FI 992798A FI 19992798 A FI19992798 A FI 19992798A FI 118343 B FI118343 B FI 118343B
- Authority
- FI
- Finland
- Prior art keywords
- chamber
- process chamber
- reaction
- loading
- loading chamber
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI992798A FI118343B (fi) | 1999-12-28 | 1999-12-28 | Laite ohutkalvojen valmistamiseksi |
CA002329566A CA2329566A1 (en) | 1999-12-28 | 2000-12-22 | Apparatus for growing thin films |
TW089127892A TW546400B (en) | 1999-12-28 | 2000-12-26 | Apparatus for growing thin films |
JP2000009192U JP3078620U (ja) | 1999-12-28 | 2000-12-27 | 薄膜を成長させるための装置 |
US09/749,329 US6447607B2 (en) | 1999-12-28 | 2000-12-27 | Apparatus for growing thin films |
KR2020000036814U KR200224420Y1 (ko) | 1999-12-28 | 2000-12-28 | 박막 성장 장치 |
US10/205,297 US6689210B2 (en) | 1999-12-28 | 2002-07-24 | Apparatus for growing thin films |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI992798 | 1999-12-28 | ||
FI992798A FI118343B (fi) | 1999-12-28 | 1999-12-28 | Laite ohutkalvojen valmistamiseksi |
Publications (2)
Publication Number | Publication Date |
---|---|
FI19992798A FI19992798A (fi) | 2001-06-29 |
FI118343B true FI118343B (fi) | 2007-10-15 |
Family
ID=8555822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI992798A FI118343B (fi) | 1999-12-28 | 1999-12-28 | Laite ohutkalvojen valmistamiseksi |
Country Status (6)
Country | Link |
---|---|
US (2) | US6447607B2 (ja) |
JP (1) | JP3078620U (ja) |
KR (1) | KR200224420Y1 (ja) |
CA (1) | CA2329566A1 (ja) |
FI (1) | FI118343B (ja) |
TW (1) | TW546400B (ja) |
Families Citing this family (75)
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FI118474B (fi) * | 1999-12-28 | 2007-11-30 | Asm Int | Laite ohutkalvojen valmistamiseksi |
US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US7037574B2 (en) * | 2001-05-23 | 2006-05-02 | Veeco Instruments, Inc. | Atomic layer deposition for fabricating thin films |
US6849545B2 (en) | 2001-06-20 | 2005-02-01 | Applied Materials, Inc. | System and method to form a composite film stack utilizing sequential deposition techniques |
US20030198754A1 (en) * | 2001-07-16 | 2003-10-23 | Ming Xi | Aluminum oxide chamber and process |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US6718126B2 (en) | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US7204886B2 (en) | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US6773507B2 (en) * | 2001-12-06 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for fast-cycle atomic layer deposition |
US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
WO2003062490A2 (en) * | 2002-01-17 | 2003-07-31 | Sundew Technologies, Llc | Ald apparatus and method |
US7175713B2 (en) * | 2002-01-25 | 2007-02-13 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6911391B2 (en) * | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US6972267B2 (en) | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
US20070243317A1 (en) * | 2002-07-15 | 2007-10-18 | Du Bois Dale R | Thermal Processing System and Configurable Vertical Chamber |
US6955211B2 (en) | 2002-07-17 | 2005-10-18 | Applied Materials, Inc. | Method and apparatus for gas temperature control in a semiconductor processing system |
US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US7066194B2 (en) * | 2002-07-19 | 2006-06-27 | Applied Materials, Inc. | Valve design and configuration for fast delivery system |
US6772072B2 (en) * | 2002-07-22 | 2004-08-03 | Applied Materials, Inc. | Method and apparatus for monitoring solid precursor delivery |
US6915592B2 (en) | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
US6821563B2 (en) | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US20040069227A1 (en) | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
US6905737B2 (en) | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
US6868859B2 (en) * | 2003-01-29 | 2005-03-22 | Applied Materials, Inc. | Rotary gas valve for pulsing a gas |
US6994319B2 (en) * | 2003-01-29 | 2006-02-07 | Applied Materials, Inc. | Membrane gas valve for pulsing a gas |
US20040177813A1 (en) * | 2003-03-12 | 2004-09-16 | Applied Materials, Inc. | Substrate support lift mechanism |
US7342984B1 (en) | 2003-04-03 | 2008-03-11 | Zilog, Inc. | Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character |
US20040198069A1 (en) | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
US20100129548A1 (en) * | 2003-06-27 | 2010-05-27 | Sundew Technologies, Llc | Ald apparatus and method |
EP1649076B1 (en) * | 2003-06-27 | 2010-05-19 | Sundew Technologies, LLC | Apparatus and method for chemical source vapor pressure control |
US20050067103A1 (en) * | 2003-09-26 | 2005-03-31 | Applied Materials, Inc. | Interferometer endpoint monitoring device |
US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US7071118B2 (en) * | 2003-11-12 | 2006-07-04 | Veeco Instruments, Inc. | Method and apparatus for fabricating a conformal thin film on a substrate |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US20060216548A1 (en) * | 2005-03-22 | 2006-09-28 | Ming Mao | Nanolaminate thin films and method for forming the same using atomic layer deposition |
US20060272577A1 (en) * | 2005-06-03 | 2006-12-07 | Ming Mao | Method and apparatus for decreasing deposition time of a thin film |
US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US7464917B2 (en) | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
TWI332532B (en) | 2005-11-04 | 2010-11-01 | Applied Materials Inc | Apparatus and process for plasma-enhanced atomic layer deposition |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US7601648B2 (en) | 2006-07-31 | 2009-10-13 | Applied Materials, Inc. | Method for fabricating an integrated gate dielectric layer for field effect transistors |
US20080099436A1 (en) * | 2006-10-30 | 2008-05-01 | Michael Grimbergen | Endpoint detection for photomask etching |
US20080176149A1 (en) * | 2006-10-30 | 2008-07-24 | Applied Materials, Inc. | Endpoint detection for photomask etching |
US7775508B2 (en) | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
US8821637B2 (en) | 2007-01-29 | 2014-09-02 | Applied Materials, Inc. | Temperature controlled lid assembly for tungsten nitride deposition |
US8146896B2 (en) | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
FI123487B (fi) * | 2009-06-15 | 2013-05-31 | Beneq Oy | Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle |
FI124113B (fi) * | 2010-08-30 | 2014-03-31 | Beneq Oy | Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi |
US8778204B2 (en) | 2010-10-29 | 2014-07-15 | Applied Materials, Inc. | Methods for reducing photoresist interference when monitoring a target layer in a plasma process |
US8961804B2 (en) | 2011-10-25 | 2015-02-24 | Applied Materials, Inc. | Etch rate detection for photomask etching |
US8808559B2 (en) | 2011-11-22 | 2014-08-19 | Applied Materials, Inc. | Etch rate detection for reflective multi-material layers etching |
US8900469B2 (en) | 2011-12-19 | 2014-12-02 | Applied Materials, Inc. | Etch rate detection for anti-reflective coating layer and absorber layer etching |
US9805939B2 (en) | 2012-10-12 | 2017-10-31 | Applied Materials, Inc. | Dual endpoint detection for advanced phase shift and binary photomasks |
KR101478151B1 (ko) * | 2012-11-29 | 2014-12-31 | 주식회사 엔씨디 | 대면적 원자층 증착 장치 |
US8778574B2 (en) | 2012-11-30 | 2014-07-15 | Applied Materials, Inc. | Method for etching EUV material layers utilized to form a photomask |
CN108385081B (zh) * | 2018-05-04 | 2024-01-12 | 华仪行(北京)科技有限公司 | 一种双仓自动镀膜装置 |
CN108315695B (zh) * | 2018-05-04 | 2023-11-17 | 苏州东福来机电科技有限公司 | 一种智能真空镀膜机构 |
US10998209B2 (en) | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
US11817331B2 (en) | 2020-07-27 | 2023-11-14 | Applied Materials, Inc. | Substrate holder replacement with protective disk during pasting process |
US11749542B2 (en) | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
US11600507B2 (en) | 2020-09-09 | 2023-03-07 | Applied Materials, Inc. | Pedestal assembly for a substrate processing chamber |
US11610799B2 (en) | 2020-09-18 | 2023-03-21 | Applied Materials, Inc. | Electrostatic chuck having a heating and chucking capabilities |
US11674227B2 (en) | 2021-02-03 | 2023-06-13 | Applied Materials, Inc. | Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure |
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SE393967B (sv) | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
US4389973A (en) | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
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GB2264957B (en) | 1992-03-12 | 1995-09-20 | Bell Communications Res | Deflected flow in a chemical vapor deposition cell |
TW293983B (ja) | 1993-12-17 | 1996-12-21 | Tokyo Electron Co Ltd | |
JPH07245332A (ja) | 1994-03-04 | 1995-09-19 | Hitachi Ltd | 半導体製造装置および半導体装置の製造方法ならびに半導体装置 |
JP3239977B2 (ja) | 1994-05-12 | 2001-12-17 | 株式会社日立国際電気 | 半導体製造装置 |
FI97731C (fi) | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Menetelmä ja laite ohutkalvojen valmistamiseksi |
FI97730C (fi) | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Laitteisto ohutkalvojen valmistamiseksi |
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KR100347379B1 (ko) | 1999-05-01 | 2002-08-07 | 주식회사 피케이엘 | 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치 |
-
1999
- 1999-12-28 FI FI992798A patent/FI118343B/fi active IP Right Grant
-
2000
- 2000-12-22 CA CA002329566A patent/CA2329566A1/en not_active Abandoned
- 2000-12-26 TW TW089127892A patent/TW546400B/zh not_active IP Right Cessation
- 2000-12-27 JP JP2000009192U patent/JP3078620U/ja not_active Expired - Lifetime
- 2000-12-27 US US09/749,329 patent/US6447607B2/en not_active Expired - Lifetime
- 2000-12-28 KR KR2020000036814U patent/KR200224420Y1/ko not_active IP Right Cessation
-
2002
- 2002-07-24 US US10/205,297 patent/US6689210B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6689210B2 (en) | 2004-02-10 |
TW546400B (en) | 2003-08-11 |
JP3078620U (ja) | 2001-07-10 |
CA2329566A1 (en) | 2001-06-28 |
US6447607B2 (en) | 2002-09-10 |
US20020185060A1 (en) | 2002-12-12 |
FI19992798A (fi) | 2001-06-29 |
US20010013312A1 (en) | 2001-08-16 |
KR200224420Y1 (ko) | 2001-05-15 |
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