TW546400B - Apparatus for growing thin films - Google Patents
Apparatus for growing thin films Download PDFInfo
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- TW546400B TW546400B TW089127892A TW89127892A TW546400B TW 546400 B TW546400 B TW 546400B TW 089127892 A TW089127892 A TW 089127892A TW 89127892 A TW89127892 A TW 89127892A TW 546400 B TW546400 B TW 546400B
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- 239000010409 thin film Substances 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 238000006243 chemical reaction Methods 0.000 claims abstract description 69
- 239000007789 gas Substances 0.000 claims abstract description 22
- 239000000376 reactant Substances 0.000 claims abstract description 15
- 238000007599 discharging Methods 0.000 claims abstract description 3
- 230000002079 cooperative effect Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000033001 locomotion Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 23
- 230000008569 process Effects 0.000 abstract description 11
- 238000006557 surface reaction Methods 0.000 abstract description 4
- 239000012808 vapor phase Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 15
- 238000003877 atomic layer epitaxy Methods 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000007858 starting material Substances 0.000 description 6
- 239000003570 air Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 208000025814 Inflammatory myopathy with abundant macrophages Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010944 pre-mature reactiony Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Description
546400 Α7 Β7 五、發明說明(1 ) 本發明與申請專利範圍第1項之前言中所述的裝置有 關,使基底交替重複接受氣相作用物的表面反應,用以在 基底的表面產生薄膜。 此種裝置包括至少一個具有緊密密封結構的處理室, 至少一個可容納在該處理室內部的反應室,反應室包括至 少部分可移動的反應空間,進氣裝置連接到反應空間,以 將作用物饋入反應空間,以及,排氣裝置也連接到反應空 間,用以排放反應空間中過量的作用物以及氣體反應生成 物。且該反應空間內至少適合容納一片基底。 習用上,薄膜是使用真空蒸鍍沈積,分子束磊晶(MBE) 及其它類似的真空沈積法,各種型式的化學氣相沈積(CVD) 法(包括低壓及有機金屬CVD及電漿增強CVD)或交替重複 表面反應沈積法,稱爲原子層磊晶法,或簡寫成ALE或 ALC VD。除了其它處理變數之外,MBE及CVD法的薄膜成 長速率也是由流入之開始物質的濃度決定。這些方法爲獲 得厚度均勻的沈積層,基底表面不同區域上開始物質的濃 度及反應速率必須很小心地保持固定。如果允許不同的開 始物質在到達基底表面前就先行混合,例如CVD法的情況 ,貝α它們相互間有可能發生反應。於是,即可能發生氣體 作用物在進氣通道中生成微顆粒的危險。這些微顆粒通常 會ί吏沈積之薄膜的品質劣化。因此,在ΜΒΕ及CVD反應器 中’對開始物質的加熱不能早於基底表面,以避免過早反 應的機會。除了加熱,所想要的反應例如可以使用電漿放 電或其它能加速反應的類似裝置起始。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1 r I ϋ· ·ϋ I i^i 1HB1 n ^i·· I— 1 tmt l i^i in ^^1 i^i I— 11 i^i _H_^i >ϋ 11 1 Ύ-0 矣. -4- 546400 A7 B7 五、發明說明(2 ) 在MBE及CVD法中,薄膜的成長主要是由控制衝擊到 基底上之開始物質的進氣速率來調整。反之,ALE法的成 長速率是由基底表面的性質來控制,而非開始物質的濃度 或流動等變數。在ALE法中唯一的必備條件是在基底表面 上成形薄膜之可用開始物質的濃度必須足夠。ALE法例如 在FI專利公告52,359及57,975及美國專利公告4,058,430及 4,3 89,973中都有描述。此外,適合實施此方法的設備構造 揭示於美國專利公告5,855,680及FI 100,409。成長薄膜的 設備也描述於以下的出版品:Material Science Report 4(7 )(1989), p.261,以及 Tyhjιόteknnkka(芬蘭的真空技術出 版品),ISBN 951-794-422-2, pp.253-261。 FI專利公告57,975所描述的ALE成長法,作用物原子 或分子被安排掠過基底,因此衝擊到它們的表面,直到在 其上形成完全飽合的分子層。接下來,借助鈍氣脈衝從基 底上方通過,將超量的作用物及氣體反應生成物從基底表 面法除,或者,在下一次不同作用物的氣體脈衝進入之前 ,先將反應空間抽真空。連續不同的氣體作用物脈衝,以 及用於隔離之鈍氣脈衝或抽真空周期所構成的擴散障,致 可甴所有這些部分的各別表面-化學反應來控制薄膜成長。 如有需要,可使用鈍氣氣流增強真空抽氣周期的效果。就 處理的功能而言,無論是氣體作用物或基底保持移動並不 相關;只需要保持連續反應的不同作用物相互間隔開,且 使它們連續地掠過基底即可。 大多數的真空蒸鍍機是以所謂的"單次-發射"(single- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製
I ·-> B^i Mmm§ ·ϋ tat ϋ ^^1 -1 I ϋ mat n -ϋ ^^1 ^^1 MaMm imam etmm I ^^1 1_1 -ϋ ^^1 1^1 ϋ 11 n I -5- 546400 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(3) shot)原理操作。藉此,被蒸發的原子或分子僅衝擊基底一 次。如果與基底表面沒有發生反應,原子/分子被反彈或再 被蒸發,以致於擊中設備的壁,或凝結在真空幫浦內。在 熱-壁的反應器中,與處理室的壁或基底撞擊過的原子或分 子可以再被蒸發,因此重複地衝擊到基底上。當應用到 ALE處理室,此π多次-發射"(mulit-shot)原理可提供若干優 點,包括增進材料消耗的效率。 ALE是以”多次-發射”的原理操作,一般的設計是使用 匣單元,複數片基底置於其內,同時置入處理室中,或者 ,基底可以不固定地放置在由壓力容器構成的處理空間內 ,處理空間同時也做爲反應室,在其中,氣相作用物與基 底表面反應以在基底上成長薄膜。如果是使用匣單元固定 數片基底的設計,匣單元的內部即形成反應室。使用匣單 元可縮短成長每片基底的時間,藉以提高產量。此外,匣 單元可以移入或移出處理室,可以拆卸淸理,不會中斷生 產,因爲一個匣單元在處理室中處理,其它的匣單元即可 在外淸理。 在習用的ALE薄膜法中以批次處理爲佳,因爲ALE法 的生產速度較其它薄膜成長技術慢。此外,批次處理可縮 短每片基底之薄膜結構的總成長時間,以便更具有競爭力 。基於相同的理由,基底的尺寸也是愈大愈佳。 在沈積薄膜時,目標是保持處理室在受控制的處理條 件下(例如溫度、壓力及其它處理參數)持續地運轉,如此 四周環境空氣中的顆粒物質及其它化學雜質無法到達基底 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -6 - (請先閱讀背面之注音?事項再填寫本頁)
546400 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(4 ) 。此外,此種配置可避免加熱/冷卻循環,此有害於處理室 的可靠度,且耗費時間。一般言之,使用分離的裝載室可 持續保持反應器所連接的真空。基底的裝載與卸載可在處 理室及裝載室都真空的情況下完成,之後,將兩室間的閥 打開,以適合進入裝載室的機械手臂將處理過的基底取出 ’並將新基底裝入處理室。接著,關閉閥’當基底與處理 室進入適當的處理條件時,即可開始處理。接下來,將氣 鎖加壓,因此,經由打開第三個閥將基底從系統中取出到 周圍的空間。要被處理的新基底也以相同的方法經由裝載 室送到處理室。 目前,配備此種裝載室的處理裝置只能處理單片基底 ,它並不適合重型的基底匣單元。視批量及基底的大小而 定,此種匣單元可能重達200公斤,因此,設計用來處理 它們的裝置,必須是堅固的結構。此外,傳送裝置的軸承 及其它類似組件的潤滑也是問題,因爲本文所需要的潤滑 油可能會影響所要成長之薄膜的結構。 傳統ALE沈積處理使用的大型匣單元是在處理裝置的 外部組合,之後,打開處理室,匣單元以整個總成的方式 傳送到處理室內。在處理室中,視匣單元的大小而定,典 型上,將匣單元加熱需要1-4小時,處理2_4小時,冷卻長 達10小時。此外,組合/拆解匣單元也是耗時的工作。當成 長極薄的薄膜時(範圍例如1 - 5 0奈米),處理時間v s.其它操 作所需的工作時間比更爲不利,因爲成長的時間只有1到 數分鐘。在此情況下,在成長薄膜的整個處理循環中,絕 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注咅?事項再填寫本頁) -ϋ ϋ ^^1 —Bi i^i >ϋ J 、a ϋ mmemw mmMM _1 -ϋ I ϋ ϋ n SHU tmMm mmaam mmmmmm ^i· ϋ ϋ ^^1 ϋ 11 1_1 Βϋ 11 ϋ I · 口 4 , 546400 Α7 Β7 五、發明說明(5 ) 大部分的時間都耗在加熱/冷卻處理室結構,加壓反應器, 拆解及組合反應室,抽真空及再加熱系統。 (請先閱讀背面之注意事項再填寫本頁) 本發明的目的是提供一種配備裝載室的全新型ALE裝 置,並適合使用自動移動的匣單元。 本發明的目標是由配備分離式裝載室的處理室達成, 它可以獨立於處理室加壓,如此,即可在真空或低壓的鈍 氣大氣中將匣單元裝入處理室。這種裝載室在製造矽薄膜 的設備中稱爲平台。裝載室可做爲預熱/冷卻的位置,以縮 短整個處理循環的時間。複數個處理室可以連接到一個裝 載室。爲移動匣單元,反應器配置一傳送機構,可以很準 確且密封地將匣單元放置到處理室中正確的位置,並從其 中移出。 更明確地說,按照本發明的裝置,如申請專利範圍第i 項之特徵部分中的描述。 本發明提供重大優點。 經濟部智慧財產局員工消費合作社印製 借助於裝載室,匣單元可以移入處理室並從其取出, 因此,處理室可以一直保持在穩定的處理狀態。因此,不 需要整個處理室進行加熱、加壓及抽真空等,只需對基底 執行,因此,可大幅增進處理室的使用效率。由於使用裝 載室’處理室的內部與周圍空氣的直接連接被隔絕,因此 ’處理室中有害顆粒的數量減少。本發明之實施例中所使 用的傳送機構可以移動較重的匣單元結構,並將它們精確 地定位在處理室內所要的位置。一個裝載室可以連接到複 數個處理室,以適合製造不同種類的薄膜結構,因此,基 本紙張尺度適用中關家標準(CNS)A4規格(210 x 297公釐) " 546400 A7 ____B7五、發明說明(6) 底上可以成長複數層薄膜層,不需要匣單元在四周大氣的 環境中做中間的傳送,因此,污染的危險降低,所需的熱 循環次數也減少。 以下將借助例示的實施例以附圖詳細描述本發明,其 中 : 圖1是按照本發明之裝置實施例的部分剖視圖; 圖2是按照本發明之裝置另一實施例的配置圖。 經濟部智慧財產局員工消費合作社印製 元件表 1 裝載室 2 處理室 3 匣單元 4 起重叉 5 門 16 噴頭 1 2 吸收盒 6 側向傳送機構 7 致動器機構 8 偏心凸輪 9 球形螺 10 旋轉移動饋通 11 電氣致動器 1 3 封圈 14 轉軸固定 (請先閱讀背面之注咅?事項再填寫本頁} 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -9 -
-^1 ϋ ϋ ϋ I ϋ I ον I I I I I >1 I I I I I n ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ I ϋ ϋ n I ϋ ϋ ϋ n I 546400 A7 B7 五、發明說明(7 ) 15 門 關於本發明,"作用物"指的是可以與基底表面作用的 氣體或氣化的固態或液態開始物質。ALE法的作用物習慣 上選用自兩不同的族。"金屬作用物”是使用金屬化合物, 它甚至可以是金屬元素。適用的金屬作用物有金屬的鹵素 化物,包括氯化物及溴化物,以及有機金屬化合物,如thd 複合化合物。金屬作用物的例子如Zn、ZnCh、Ca(thd)2、 (CH3)3A1、Cp2Mg。化合物及元素所使用的"非金屬作用物" 可與金屬化合物反應。後者適當的代表有水、硫磺、硫化 氫、及氨水。 在本文中,當使用"保護氣體”一詞時指的是容許進入 反應空間的氣體能防止與作用物及基底相關的反應。這些 反應例如包括作用物與可能含有雜質之基底的反應。保護 氣體也防止例如在進氣管路中不同作用物族之物質間的反 應。在按照本發明的方法中,不同作用物族的作用物經由 不同的進氣岐管進入反應空間,氣相作用物脈衝從一條進 氣通道進入,同時,保護氣體從另一條進氣通道進入,因 此,防止進入的作用物進入另一作用物族的進氣通道。適 用的保護氣體是鈍氣,如氮氣及稀有氣體,例如氬氣。保 護氣體也可以是固有的反應氣體,例如氫氣’用來防止基 底表面上發生不想要的反應(例如氧化作用)。 按照本發明,”反應室”包括基底所在的反應空間,以 及可與基底反應以成長薄膜之氣相作用物所在的反應空間 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製
ϋ n n n I ϋ ϋ 一-^J« ϋ ϋ ϋ H ϋ ϋ ϋ I I ϋ n I ϋ ^1 H I ϋ ϋ I ϋ ϋ H ϋ ϋ ϋ I I ϋ ϋ ϋ ϋ I -10- 546400 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明(8 ) ,以及與反應空間直接連通的氣體進氣/排氣通道’該通道 允許作用物進入反應空間(進氣通道)或將氣體反應物及成長 薄膜超量的作用物移出反應空間(排氣通道)。在這類型反應 空間中的基底,將接受至少2種用來成長薄膜之不同作用 物交替重複的表面反應。氣相作用物可以重複且交替地進 入,每一個作用物從它們自己的源分別被饋入反應室,它 們與基底表面反應,以在基底上形成所要的固態薄膜。沒 有黏附在基底上的作用產物以及任何可能的超量作用物’ 都在氣相時從反應室中移走。 本文中使用的”基底表面",是指流入反應室的氣相作 用物所要衝擊的基底表面。實際上,在薄膜成長處理的第 一循環期間,該表面就是基底的表面,例如玻璃,或其它 的開始表面;在第二循環期間,該表面是第一循環期間所 生成的層,包括固態的反應物,它是作用物與基底間的反 應所沈積,黏附在基底上。 π處理室"所稱的空間是進行薄膜成長處理所需的空間 ,它以緊密密封的方式與它所在的環境隔離。反應室位於 處理室內,此外,一個處理室可以結合複數個反應室。 現請參閱圖1,圖中所說明的裝置結構包括一裝載室1 ,也做爲裝載閘門,圖中它的壁一部分切開以說明室的內 部,傳送裝置適配在裝載室1及冷-壁的處理室2內,圖中 它的壁一部分切開以說明室的內部。匣單元3包含基底並 做爲反應空間,圖中顯示支撐在固定於門5上的起重叉4上 ,門5使裝載室1與處理室2隔離。在匣單元3上方是噴頭 (請先閱讀背面之注意事項再填寫本頁)
本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -11 - 546400 A7 B7 五、發明說明(9 ) 16 ,包含作用物進氣通道。在處理室2內是永久固定的吸 收盒12,匣單元3及噴頭16置於其上’盒內安裝有排放反 應氣體及超量作用物的排氣裝置。匣單元3、噴頭丨6及吸 收盒12共同組成反應室。 門5也做爲裝載室1與處理室2間的閘閥’適合由致動 器機構7移動。匣單元3的側向傳送機構ό位於匣單元3的 上方,適合在抬升期間利用鉤抓取匣單元3。致動器機構7 及严3 5的頂側側向傳送機構6可以使用一偏心凸輪8致動抬 升移動,以及球形螺(ball serew)9致動水平的移動。這些配 置的優點是旋轉移動饋通1 〇的實施可靠緊密地密封。傳送 裝置6、7、8、9的電氣致動器11可以設計在裝載室1及 處理室2的外部,一則可避免電氣致動器1 1在真空中可能 發生的擊穿(breakthrough)問題,再則,此種配置使得保養 致動器11較容易。 其內置有基底的匣單元3連同位於頂上的噴頭16,經 由15傳送到裝載室1內,之後,關閉門15。典型上, ALE的處理步騾是在大約0.1-30毫巴的壓力下進行,在關 閉門15之後,裝載室1必須將真空抽到低於處理壓力。爲 此目的,裝載室1最好是配備獨立的真空邦浦,專做此用 途。在抽真空之後,分隔裝載室1與處理室2的門5由門致 動器機構7打開。門5的配置是在裝載室的內部移動,移動 方向基本上垂直於它的密封面。側向傳送機構6藉由一鉤 鎖住匣單元3的頂端,並將匣單元3連同噴頭1 6傳送到可 垂直移動的抬升裝置,如固定在門5面對處理室2側上的起 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)
-1------訂---------線 T I 經濟部智慧財產局員工消費合作社印製 -12- 546400 A7 B7 五、發明說明(10) 重叉4。接著,側向傳送機構6的鉤從匣單元3釋放,因此 ,可以控制門5關閉。放置在起重叉4上的匣單元3與噴頭 1 6可在距離門5關閉位置大約1 0 - 2 0毫米處先降到吸收盒1 2 上,因此,固定在門5上的起重叉4在下降移動到最低點前 即可將匣單元3釋放在吸收盒1 2上。此種配置可減輕門5 在關閉瞬間的額外負載,因此,它可以很容易與它的座面 匹配,並將有效密封所需的均勻線性壓力加諸於封圈1 3。 門以轉軸固定14使得安座步驟變得容易。 在處理步驟完成之後,起重叉4將匣單元3與上方的噴 頭1 6從吸收盒1 2上抬起。接下來,打開門5,將起重叉4 上的匣單元3移到裝載室1內。藉助於它上方的鉤,側向傳 送機構6將匣單元3抓起,並將匣單元3及它上的方噴頭1 6 從起重叉4上移到裝載室1的門15前。在門5關閉之後’ 裝載室1可以加壓,並將匣單元3移出裝載室1。將匣單元 3從裝載室1中取出,並將新的匣單元送入裝載室1 ’例如 可以使用配備有起重叉機構的推車執行。 如果吸收盒1 2是以它的邊緣支撐在處理室2上’則口及 收盒12與匣單元3的熱膨脹移動會對吸收盒12施加熱應力 。熱膨脹位移的幅度可能大至數毫米。此種尺寸的改:變胃 使某些步驟變得複雜,例如,在自動卸載/裝塡期間# E 5 元3置入處理室2內時的定位。因此,吸收盒1 2最好是支: 撐在處理室2的壁結構上,如此,支撐點的中心至少基本 上與吸收盒1 2之底的中心點相合,如此,吸收盒1 2從匕的 支撐點向外擴張可有較大的自由度,且匣單元3的定&精 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製
-I ^1 ϋ n I I ϋ I I— H ϋ ϋ I ϋ ϋ ϋ ϋ H ϋ ^1 I ϋ ϋ ϋ I ϋ ϋ ϋ ϋ ϋ I I _ϋ i— H ϋ I 本紙張尺度用中國國家標準(CNS)A4規格(210 x 297公釐) -13- 546400 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(11) 度也獲得增進。 在圖2所示的實施例中,裝載室1的側向尺寸製造得比 較寬,因此,經由延伸側向傳送機構6所能到達的距離, 可以爲裝載室1配置更多的匣單元卸載位置。因此,一個 裝載室1可以連接到複數個處理室2。在本文中,處理室2 例如可以適合製造不同類型的薄膜結構’或者,執行某一 薄膜成長處理的不同步驟。使用擴充的裝載室1可以使每 片基底的處理時間更加縮短,並具有其它顯著的優點。 除了上述之外,本發明也可有不同的實施例。 一個單處理室2內可以容納複數個反應室。此外,裝 載室1可補以中間站,在送入處理室2之前先加熱匣單元3 ,及/或在移出裝載室1前先冷卻匣單元3,因此,處理室2 的產出能力可以提升。此外,匣單元3可以很方便地從四 周空氣的大氣中傳送到具有複數個供匣單元3卸載位置的 裝載室1內,並可分別經由一分離的加壓室從其中取出’ 因此,在傳送匣單元3時,不需要對整個大體積的裝載室1 力口壓。 處理室2與裝載室1間的密封例如可以使用閘閥實施以 取代門5。此外,以匣單元3做爲反應空間就不需要一整體 移動的結構◦在匣單元3的內部例如可以配置一放置基底 的匣,它們在其中經由裝載室1進入處理室2,並接著從處 理室2離開。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -14- (請先閱讀背面之注意事項再填寫本頁)
Claims (1)
- 54640XT 公告本 六、申請專利範圍 1. 一種薄膜成長裝置,其中薄膜經由將基底曝露於交 替重複的氣相作用物中以在基底表面成長,該裝置包括: (請先閱讀背面之注意事項再填寫本頁) 至少一個具有緊密密封結構的處理室(2); 至少一個反應室,其結構適合容納到該處理室(2)的內 部,且包括一至少部分可移動的反應空間(3),進氣裝置 (16)可連接到該反應空間(3),以將該作用物饋入該反應空 間(3),以及排氣裝置(12),也連接到該反應空間(3),用以 排放該反應空間(3)中超量的作用物及反應氣體,以及 至少一片適合放入該反應空間(3)的基底, 其特徵爲 設置至少一個裝載室(1)與該處理室(2)共同操作,以便 允許該反應空間(3)或其部分可移入該處理室(2),以及離開 該處理室(2),且它的操作壓力可與該處理室(2)分別控制。 2. 如申請專利範圍第1項的裝置,其特徵爲門(5)分隔 該處理室(2)與該裝載室(1),該門適合在該裝載室(1)的內部 移動,移動方向實質上垂直於該門的門板面。 經濟部智慧財產局員工消費合作社印製 3. 如申請專利範圍第2項的裝置,其特徵爲抬升裝置 (4)如起重叉附接於該門(5)面對處理室(2)的面,並適合在垂 直方向移動,因此,它可支撐該反應空間(3)或其部分從該 裝載室(1)傳送到該處理室(2)。 4. 如申請專利範圍第1項的裝置,其特徵爲該處理室 (2)與該裝載室(1)相互間被一閘閥結構隔開。 5·如申請專利範圍第1項的裝置,其特徵爲該反應室 包括永久固定在該處理室(2)的排氣裝置(12),以及可移動 本紙張尺度適用中國國家標举(CNS)A4規格(210 X 297公爱) Π5 - 546400 B8 C8 D8 六、中請專利範圍 的進氣裝置(16)與反應空間(3)。 6.如申請專利範圍第丨項的裝置,其特徵爲傳送裝置(6 、7、8、9)的電氣致動器位於該處理室(2)及該裝載室 的外部。 7·如申請專利範圍第丨項的裝置,其特徵爲該反應空 間(3)的冷卻站適合與該裝載室(1)共同操作。 8·如申請專利範圍第丨或第6項的裝置,其特徵爲該反 應空間(3)的預熱站適合與該裝載室(丨)共同操作。 9.如申請專利範圍第丨、6或7項的裝置,其特徵爲該 反應空間(3)之分離的加壓站適合與該裝載室(1)共同操作。 10 ·如申請專利範圍第1項的裝置,其特徵爲配置複數 個處理室(2)與單一個裝載室(1)共同操作,以適合製造不同 類型的薄膜結構。 11 ·如申請專利範圍第1項的裝置,其特徵爲配置複數 個處理室(2)與單一個裝載室(1)共同操作,以適合製造同類 型的薄膜結構。 12.如申請專利範圍第1或5項的裝置,其特徵爲該反 應室與該處理室(2)結構的支撐被調適成至少與該排氣裝置 (1 2)的中心點相合。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 I -· n n n n n n n 一ai、I n i^i ϋ ϋ ϋ ϋ I I n n n ϋ n n n I n .^1 n n ϋ n n ϋ- ·ϋ n !1 ϋ n ϋ . -16-
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US6447607B2 (en) | 2002-09-10 |
CA2329566A1 (en) | 2001-06-28 |
US20010013312A1 (en) | 2001-08-16 |
US20020185060A1 (en) | 2002-12-12 |
FI19992798A (fi) | 2001-06-29 |
JP3078620U (ja) | 2001-07-10 |
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