ES8404111A1 - Perfeccionamientos en una unidad de base para conjuntos de compuertas logicas de circuito integrado. - Google Patents

Perfeccionamientos en una unidad de base para conjuntos de compuertas logicas de circuito integrado.

Info

Publication number
ES8404111A1
ES8404111A1 ES521503A ES521503A ES8404111A1 ES 8404111 A1 ES8404111 A1 ES 8404111A1 ES 521503 A ES521503 A ES 521503A ES 521503 A ES521503 A ES 521503A ES 8404111 A1 ES8404111 A1 ES 8404111A1
Authority
ES
Spain
Prior art keywords
integrated
gate arrays
basic cell
type
interconnection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES521503A
Other languages
English (en)
Spanish (es)
Other versions
ES521503A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telecom Italia SpA
Original Assignee
CSELT Centro Studi e Laboratori Telecomunicazioni SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSELT Centro Studi e Laboratori Telecomunicazioni SpA filed Critical CSELT Centro Studi e Laboratori Telecomunicazioni SpA
Publication of ES521503A0 publication Critical patent/ES521503A0/es
Publication of ES8404111A1 publication Critical patent/ES8404111A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • H10D84/903Masterslice integrated circuits comprising field effect technology
    • H10D84/907CMOS gate arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/923Active solid-state devices, e.g. transistors, solid-state diodes with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
ES521503A 1982-04-15 1983-04-15 Perfeccionamientos en una unidad de base para conjuntos de compuertas logicas de circuito integrado. Expired ES8404111A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT67501/82A IT1191188B (it) 1982-04-15 1982-04-15 Cella elementare per reti di porte logiche a circuito integrato

Publications (2)

Publication Number Publication Date
ES521503A0 ES521503A0 (es) 1984-04-01
ES8404111A1 true ES8404111A1 (es) 1984-04-01

Family

ID=11302946

Family Applications (1)

Application Number Title Priority Date Filing Date
ES521503A Expired ES8404111A1 (es) 1982-04-15 1983-04-15 Perfeccionamientos en una unidad de base para conjuntos de compuertas logicas de circuito integrado.

Country Status (10)

Country Link
US (1) US4595940A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0092176B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS59938A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) ATE36207T1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1187624A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE3377603D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DK (1) DK162867C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES8404111A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1191188B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NO (1) NO164947C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783749A (en) * 1985-05-21 1988-11-08 Siemens Aktiengesellschaft Basic cell realized in the CMOS technique and a method for the automatic generation of such a basic cell
DE4002780C2 (de) * 1990-01-31 1995-01-19 Fraunhofer Ges Forschung Basiszelle für eine kanallose Gate-Array-Anordnung
US5291043A (en) * 1990-02-07 1994-03-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having gate array
US6399972B1 (en) * 2000-03-13 2002-06-04 Oki Electric Industry Co., Ltd. Cell based integrated circuit and unit cell architecture therefor
JP2011242541A (ja) * 2010-05-17 2011-12-01 Panasonic Corp 半導体集積回路装置、および標準セルの端子構造
CA3122203A1 (en) 2010-12-20 2012-06-28 The Nielsen Company (Us), Llc Methods and apparatus to determine media impressions using distributed demographic information
AU2013204865B2 (en) 2012-06-11 2015-07-09 The Nielsen Company (Us), Llc Methods and apparatus to share online media impressions data

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1440512A (en) * 1973-04-30 1976-06-23 Rca Corp Universal array using complementary transistors
JPS5925381B2 (ja) * 1977-12-30 1984-06-16 富士通株式会社 半導体集積回路装置
US4356504A (en) * 1980-03-28 1982-10-26 International Microcircuits, Inc. MOS Integrated circuit structure for discretionary interconnection
JPS5749253A (en) * 1980-09-09 1982-03-23 Toshiba Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
NO831320L (no) 1983-10-17
DK158383D0 (da) 1983-04-11
DK162867B (da) 1991-12-16
DK158383A (da) 1983-10-16
EP0092176B1 (en) 1988-08-03
ES521503A0 (es) 1984-04-01
NO164947B (no) 1990-08-20
DK162867C (da) 1992-05-04
DE92176T1 (de) 1985-10-24
CA1187624A (en) 1985-05-21
IT8267501A0 (it) 1982-04-15
NO164947C (no) 1990-11-28
EP0092176A3 (en) 1985-08-21
JPS59938A (ja) 1984-01-06
EP0092176A2 (en) 1983-10-26
US4595940A (en) 1986-06-17
IT1191188B (it) 1988-02-24
DE3377603D1 (en) 1988-09-08
ATE36207T1 (de) 1988-08-15
JPH0254670B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-11-22

Similar Documents

Publication Publication Date Title
ES2104668T3 (es) Electrodo para transistor vertical con efecto de campo y metodo para la fabricacion del mismo.
CH648453GA3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ATE181790T1 (de) Basiszelle für bicmos-gatterfeld
ATE457527T1 (de) Integrierter leistungs-schaltkreis mit verteiltem gattertreiber
ES8404111A1 (es) Perfeccionamientos en una unidad de base para conjuntos de compuertas logicas de circuito integrado.
ATE82808T1 (de) Schaltbare bipolare stromquelle.
SE7710301L (sv) Felteffekttransistor
JPH0658614B2 (ja) Cmos分圧回路
SE7602265L (sv) Detektorkrets
KR890009002A (ko) 양방성 입출력 셀
KR940010175A (ko) 개선된 배치 패턴을 갖는 반도체 회로
KR880014675A (ko) 정전 보호회로
BR7017115D0 (pt) Transistor de efeito de campo do tipo compreendendo um eletrodo porta isolado
ES2163414T3 (es) Circuito de alta impedancia.
IT1084222B (it) Transistore a effitto di campo constrato isolante e canalea conduzione di tipo n, realizzato con la tecnica epitasdiale a film di silicio.
SE8502469L (sv) Bipoler transistor
DE3277338D1 (en) Static memory cell
GB1436988A (en) Logic voltage inverter circuits
IT8683653A0 (it) Amplificatore differenziale utilizzante transistori mos con canale dello stesso tipo.
DE3869229D1 (de) Generatorschaltung.
KR870002660A (ko) 게이트 어레이 lsi용 지연회로
KR900013655A (ko) 반도체 회로
KR870000804A (ko) Cmos파워-온 검출회로
KR880000972A (ko) 정전 방전 보호회로
KR890013895A (ko) 배선영역에 매입된 트랜지스터를 갖는 게이트 어레이

Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19991108