IT1084222B - Transistore a effitto di campo constrato isolante e canalea conduzione di tipo n, realizzato con la tecnica epitasdiale a film di silicio. - Google Patents

Transistore a effitto di campo constrato isolante e canalea conduzione di tipo n, realizzato con la tecnica epitasdiale a film di silicio.

Info

Publication number
IT1084222B
IT1084222B IT27314/77A IT2731477A IT1084222B IT 1084222 B IT1084222 B IT 1084222B IT 27314/77 A IT27314/77 A IT 27314/77A IT 2731477 A IT2731477 A IT 2731477A IT 1084222 B IT1084222 B IT 1084222B
Authority
IT
Italy
Prior art keywords
constrate
insulating
effect transistor
field
silicon film
Prior art date
Application number
IT27314/77A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1084222B publication Critical patent/IT1084222B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652Through-implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IT27314/77A 1976-09-14 1977-09-07 Transistore a effitto di campo constrato isolante e canalea conduzione di tipo n, realizzato con la tecnica epitasdiale a film di silicio. IT1084222B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762641302 DE2641302A1 (de) 1976-09-14 1976-09-14 N-kanal mis-fet in esfi-technik

Publications (1)

Publication Number Publication Date
IT1084222B true IT1084222B (it) 1985-05-25

Family

ID=5987864

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27314/77A IT1084222B (it) 1976-09-14 1977-09-07 Transistore a effitto di campo constrato isolante e canalea conduzione di tipo n, realizzato con la tecnica epitasdiale a film di silicio.

Country Status (7)

Country Link
JP (1) JPS5336186A (it)
BE (1) BE858694A (it)
DE (1) DE2641302A1 (it)
FR (1) FR2364542A1 (it)
GB (1) GB1543132A (it)
IT (1) IT1084222B (it)
NL (1) NL7710034A (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5820296B2 (ja) * 1979-02-16 1983-04-22 日本化成株式会社 気液接触装置
US4797721A (en) * 1987-04-13 1989-01-10 General Electric Company Radiation hardened semiconductor device and method of making the same
NL8701251A (nl) * 1987-05-26 1988-12-16 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
JP2782781B2 (ja) * 1989-05-20 1998-08-06 富士通株式会社 半導体装置の製造方法
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
GB2358079B (en) 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor
GB2358080B (en) * 2000-01-07 2004-06-02 Seiko Epson Corp Method of manufacturing a thin-film transistor

Also Published As

Publication number Publication date
FR2364542A1 (fr) 1978-04-07
DE2641302A1 (de) 1978-03-16
NL7710034A (nl) 1978-03-16
BE858694A (fr) 1978-01-02
GB1543132A (en) 1979-03-28
JPS5336186A (en) 1978-04-04

Similar Documents

Publication Publication Date Title
NL7701776A (nl) Veldeffekttransistor met zeer korte kanaallengte.
NL7704633A (nl) Veldeffecttransistor.
NL7704867A (nl) Veldeffecttransistor met een oppervlaktekanaal.
DE3072175D1 (de) Halbleitervorrichtungen mit heterouebergang.
DE3588011D1 (de) Halbleiteranordnung mit epitaxialem Material.
JPS52131483A (en) Mis-type semiconductor device
NL7701118A (nl) Afdichtingsinrichting.
NL177164C (nl) Foto-elektrisch halfgeleiderelement.
NL173572C (nl) Halfgeleiderinrichting.
IT7924515A0 (it) Transistore ad effetto di campo, dotato di un elettrodo di porta isolato.
NL172018C (nl) Stripvormig verbindingselement.
NL7702141A (nl) Veldeffekt-transistor.
NO774426L (no) Tetningsinnretning.
IT7922902A0 (it) Dispositivi semiconduttori con un contatto ohmico con semiconduttori di tipo n dei gruppi iii-v.
FR2315171A1 (fr) Transistor notamment a base epitaxiale associe a une diode schottky montee en parallele sur la jonction collecteur-base
IT1084222B (it) Transistore a effitto di campo constrato isolante e canalea conduzione di tipo n, realizzato con la tecnica epitasdiale a film di silicio.
IT1084922B (it) Circuito miscelatore comprendente tansistori ad effetto di campo,a simmetria complementare
NL7708526A (nl) Geintegreerde halfgeleiderketen met statische inductietransistor.
NL7701230A (nl) Afdichtingsinrichting.
BE854943R (nl) Elektrisch kanaal met insnapbare verbindingsinrichting
NL7713948A (nl) Vermogenstransistor.
NL7708369A (nl) Geintegreerde halfgeleiderketen.
NO772159L (no) Termoplastlignende elastomer.
NL7606482A (nl) Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm.
JPS5384570A (en) Field effect semiconductor device and its manufacture