IT1084222B - Transistore a effitto di campo constrato isolante e canalea conduzione di tipo n, realizzato con la tecnica epitasdiale a film di silicio. - Google Patents
Transistore a effitto di campo constrato isolante e canalea conduzione di tipo n, realizzato con la tecnica epitasdiale a film di silicio.Info
- Publication number
- IT1084222B IT1084222B IT27314/77A IT2731477A IT1084222B IT 1084222 B IT1084222 B IT 1084222B IT 27314/77 A IT27314/77 A IT 27314/77A IT 2731477 A IT2731477 A IT 2731477A IT 1084222 B IT1084222 B IT 1084222B
- Authority
- IT
- Italy
- Prior art keywords
- constrate
- insulating
- effect transistor
- field
- silicon film
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19762641302 DE2641302A1 (de) | 1976-09-14 | 1976-09-14 | N-kanal mis-fet in esfi-technik |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1084222B true IT1084222B (it) | 1985-05-25 |
Family
ID=5987864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT27314/77A IT1084222B (it) | 1976-09-14 | 1977-09-07 | Transistore a effitto di campo constrato isolante e canalea conduzione di tipo n, realizzato con la tecnica epitasdiale a film di silicio. |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5336186A (it) |
BE (1) | BE858694A (it) |
DE (1) | DE2641302A1 (it) |
FR (1) | FR2364542A1 (it) |
GB (1) | GB1543132A (it) |
IT (1) | IT1084222B (it) |
NL (1) | NL7710034A (it) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5820296B2 (ja) * | 1979-02-16 | 1983-04-22 | 日本化成株式会社 | 気液接触装置 |
US4797721A (en) * | 1987-04-13 | 1989-01-10 | General Electric Company | Radiation hardened semiconductor device and method of making the same |
NL8701251A (nl) * | 1987-05-26 | 1988-12-16 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
JP2782781B2 (ja) * | 1989-05-20 | 1998-08-06 | 富士通株式会社 | 半導体装置の製造方法 |
US5238857A (en) * | 1989-05-20 | 1993-08-24 | Fujitsu Limited | Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure |
GB2358079B (en) | 2000-01-07 | 2004-02-18 | Seiko Epson Corp | Thin-film transistor |
GB2358080B (en) * | 2000-01-07 | 2004-06-02 | Seiko Epson Corp | Method of manufacturing a thin-film transistor |
-
1976
- 1976-09-14 DE DE19762641302 patent/DE2641302A1/de not_active Withdrawn
-
1977
- 1977-08-31 FR FR7726449A patent/FR2364542A1/fr not_active Withdrawn
- 1977-09-07 IT IT27314/77A patent/IT1084222B/it active
- 1977-09-08 JP JP10832577A patent/JPS5336186A/ja active Pending
- 1977-09-13 GB GB38062/77A patent/GB1543132A/en not_active Expired
- 1977-09-13 NL NL7710034A patent/NL7710034A/xx not_active Application Discontinuation
- 1977-09-14 BE BE180905A patent/BE858694A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR2364542A1 (fr) | 1978-04-07 |
DE2641302A1 (de) | 1978-03-16 |
NL7710034A (nl) | 1978-03-16 |
BE858694A (fr) | 1978-01-02 |
GB1543132A (en) | 1979-03-28 |
JPS5336186A (en) | 1978-04-04 |
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