ES8402462A1 - Procedimiento para la fabricacion de semiconductores amorfos - Google Patents

Procedimiento para la fabricacion de semiconductores amorfos

Info

Publication number
ES8402462A1
ES8402462A1 ES510893A ES510893A ES8402462A1 ES 8402462 A1 ES8402462 A1 ES 8402462A1 ES 510893 A ES510893 A ES 510893A ES 510893 A ES510893 A ES 510893A ES 8402462 A1 ES8402462 A1 ES 8402462A1
Authority
ES
Spain
Prior art keywords
substrate
outlet
reaction chamber
inlet
gaseous mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES510893A
Other languages
English (en)
Spanish (es)
Other versions
ES510893A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chronar Corp
Original Assignee
Chronar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chronar Corp filed Critical Chronar Corp
Publication of ES510893A0 publication Critical patent/ES510893A0/es
Publication of ES8402462A1 publication Critical patent/ES8402462A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
ES510893A 1981-03-11 1982-03-10 Procedimiento para la fabricacion de semiconductores amorfos Expired ES8402462A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24270781A 1981-03-11 1981-03-11

Publications (2)

Publication Number Publication Date
ES510893A0 ES510893A0 (es) 1984-02-01
ES8402462A1 true ES8402462A1 (es) 1984-02-01

Family

ID=22915870

Family Applications (1)

Application Number Title Priority Date Filing Date
ES510893A Expired ES8402462A1 (es) 1981-03-11 1982-03-10 Procedimiento para la fabricacion de semiconductores amorfos

Country Status (11)

Country Link
EP (1) EP0075007A4 (https=)
JP (1) JPS58500360A (https=)
KR (1) KR910002764B1 (https=)
CA (1) CA1187622A (https=)
ES (1) ES8402462A1 (https=)
HU (1) HU187713B (https=)
IN (1) IN156594B (https=)
IT (1) IT1150674B (https=)
NO (1) NO823744L (https=)
OA (1) OA07249A (https=)
WO (1) WO1982003069A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1245109A (en) * 1983-10-31 1988-11-22 Hsien-Kun Chu Method of forming amorphous polymeric halosilane films and products produced therefrom
FR2555206B1 (fr) * 1983-11-22 1986-05-09 Thomson Csf Procede de depot de silicium amorphe par decomposition thermique a basse temperature et dispositif de mise en oeuvre du procede
DE3441044A1 (de) * 1984-11-09 1986-05-22 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Verfahren zur herstellung von duennschicht-halbleiterelementen, insbesondere solarzellen
US4637895A (en) * 1985-04-01 1987-01-20 Energy Conversion Devices, Inc. Gas mixtures for the vapor deposition of semiconductor material
US4696834A (en) * 1986-02-28 1987-09-29 Dow Corning Corporation Silicon-containing coatings and a method for their preparation
US4762808A (en) * 1987-06-22 1988-08-09 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
US4923719A (en) * 1988-08-22 1990-05-08 Allied-Signal Inc. Method of coating silicon carbide fibers
US5424097A (en) * 1993-09-30 1995-06-13 Specialty Coating Systems, Inc. Continuous vapor deposition apparatus
JP3932206B2 (ja) * 1995-10-18 2007-06-20 スペシャルティ、コーティング、システムズ、インコーポレイテッド オクタフルオロ−〔２，２〕パラシクロファンの製造方法
EP0862664B1 (en) * 1995-10-27 2003-01-02 Specialty Coating Systems, Inc. Method and apparatus for the deposition of parylene af4 onto semiconductor wafers
US5806319A (en) * 1997-03-13 1998-09-15 Wary; John Method and apparatus for cryogenically cooling a deposition chamber
US5841005A (en) * 1997-03-14 1998-11-24 Dolbier, Jr.; William R. Parylene AF4 synthesis
US6051276A (en) * 1997-03-14 2000-04-18 Alpha Metals, Inc. Internally heated pyrolysis zone
RU2298588C2 (ru) * 2005-07-21 2007-05-10 Общество с Ограниченной Ответственностью "Гелиос" Способ получения вещества, выбранного из ряда тугоплавких металлов или ряда неметаллов: кремний, бор, фосфор, мышьяк, сера
EP1943669A4 (en) 2005-10-05 2012-06-13 Kovio Inc LINEAR AND NETWORKED HIGHLY MOLECULAR POLYSILANES, POLYGERMANES AND COPOLYMERS THEREOF, COMPOSITIONS CONTAINING THEM AND METHOD FOR THE PREPARATION AND USE OF SUCH COMPOUNDS AND COMPOSITIONS
US7799376B2 (en) * 2007-07-27 2010-09-21 Dalsa Semiconductor Inc. Method of controlling film stress in MEMS devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB524765I5 (https=) * 1966-02-03 1900-01-01
US3490961A (en) * 1966-12-21 1970-01-20 Sprague Electric Co Method of producing silicon body
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4237150A (en) * 1979-04-18 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Method of producing hydrogenated amorphous silicon film
US4237151A (en) * 1979-06-26 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Thermal decomposition of silane to form hydrogenated amorphous Si film
JPS5767938A (en) * 1980-10-16 1982-04-24 Canon Inc Production of photoconductive member

Also Published As

Publication number Publication date
WO1982003069A1 (en) 1982-09-16
IT8220100A0 (it) 1982-03-11
CA1187622A (en) 1985-05-21
IT1150674B (it) 1986-12-17
ES510893A0 (es) 1984-02-01
JPS58500360A (ja) 1983-03-10
EP0075007A4 (en) 1984-06-05
IN156594B (https=) 1985-09-14
EP0075007A1 (en) 1983-03-30
OA07249A (fr) 1984-08-31
HU187713B (en) 1986-02-28
KR910002764B1 (ko) 1991-05-04
NO823744L (no) 1982-11-10

Similar Documents

Publication Publication Date Title
ES8402462A1 (es) Procedimiento para la fabricacion de semiconductores amorfos
US4608063A (en) Exhaust system for chemical vapor deposition apparatus
US4237151A (en) Thermal decomposition of silane to form hydrogenated amorphous Si film
US4237150A (en) Method of producing hydrogenated amorphous silicon film
EP0030638B2 (en) Method for depositing silicon or germanium containing films
EP0139134A3 (en) Deposition and diffusion source control means and method
US4292343A (en) Method of manufacturing semiconductor bodies composed of amorphous silicon
Vepřek et al. Possible contribution of SiH2 and SiH3 in the plasma‐induced deposition of amorphous silicon from silane
Bradshaw The effects of gas pressure and velocity on epitaxial silicon deposition by the hydrogen reduction of chlorosilanes
US4803093A (en) Process for preparing a functional deposited film
US3389022A (en) Method for producing silicon carbide layers on silicon substrates
JPS5534690A (en) Low pressure gas phase growing apparatus
JPS5694751A (en) Vapor growth method
US4945857A (en) Plasma formation of hydride compounds
US3340110A (en) Method for producing semiconductor devices
EP0094426B1 (en) Bandgap control in amorphous semiconductors
GB977847A (en) Method for the production of crystalline particularly monocrystalline boron
GB1037146A (en) Improvements in or relating to processes for manufacturing semiconductor cyrstals having at least two layers of different conductivity and/or conductivity type
Wiesmann Method of producing hydrogenated amorphous silicon film
JPS56153727A (en) Manufacture of semiconductor device
Woodruff et al. Experimental Study of Equilibrium Conditions in the Si‐H‐Cl System
JPH0363538A (ja) 圧力センサー
JPS5727914A (en) Manufacture of thin silicon carbide film
Dominguez et al. Low pressure silicon epitaxy in a hot-wall reactor
JPS60227415A (ja) 気相成長装置

Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19981103