ES8201376A1 - Perfeccionamientos en dispositivos conmutadores - Google Patents

Perfeccionamientos en dispositivos conmutadores

Info

Publication number
ES8201376A1
ES8201376A1 ES498097A ES498097A ES8201376A1 ES 8201376 A1 ES8201376 A1 ES 8201376A1 ES 498097 A ES498097 A ES 498097A ES 498097 A ES498097 A ES 498097A ES 8201376 A1 ES8201376 A1 ES 8201376A1
Authority
ES
Spain
Prior art keywords
conductivity
type
region
high voltage
state switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES498097A
Other languages
English (en)
Spanish (es)
Other versions
ES498097A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES8201376A1 publication Critical patent/ES8201376A1/es
Publication of ES498097A0 publication Critical patent/ES498097A0/es
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391Gated diode structures
    • H01L29/7392Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
  • Junction Field-Effect Transistors (AREA)
ES498097A 1979-12-28 1980-12-23 Perfeccionamientos en dispositivos conmutadores Granted ES498097A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10777579A 1979-12-28 1979-12-28

Publications (2)

Publication Number Publication Date
ES8201376A1 true ES8201376A1 (es) 1981-12-16
ES498097A0 ES498097A0 (es) 1981-12-16

Family

ID=22318408

Family Applications (1)

Application Number Title Priority Date Filing Date
ES498097A Granted ES498097A0 (es) 1979-12-28 1980-12-23 Perfeccionamientos en dispositivos conmutadores

Country Status (21)

Country Link
JP (1) JPS56103467A (xx)
KR (1) KR840002413B1 (xx)
AU (1) AU534874B2 (xx)
BE (1) BE886821A (xx)
CA (1) CA1145057A (xx)
CH (1) CH652863A5 (xx)
DD (1) DD156039A5 (xx)
DE (1) DE3048702A1 (xx)
DK (1) DK549780A (xx)
ES (1) ES498097A0 (xx)
FR (1) FR2473790A1 (xx)
GB (1) GB2066569B (xx)
HK (1) HK69684A (xx)
HU (1) HU181246B (xx)
IE (1) IE50697B1 (xx)
IL (1) IL61780A (xx)
IT (1) IT1134896B (xx)
NL (1) NL8007051A (xx)
PL (1) PL228665A1 (xx)
SE (1) SE453621B (xx)
SG (1) SG35184G (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
US4573065A (en) * 1982-12-10 1986-02-25 At&T Bell Laboratories Radial high voltage switch structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1039915A (en) * 1964-05-25 1966-08-24 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
JPS5135114B1 (xx) * 1970-12-28 1976-09-30
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
DE2133430A1 (de) * 1971-07-05 1973-01-18 Siemens Ag Planar-vierschichtdiode
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (xx) * 1973-07-23 1975-04-10
JPS5210061A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Thyristor circuit
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
JPS5412682A (en) * 1977-06-30 1979-01-30 Nec Corp Thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes
GB2049283B (en) * 1978-12-20 1983-07-27 Western Electric Co High voltage dielectrically isolated solid-state switch

Also Published As

Publication number Publication date
HU181246B (en) 1983-06-28
SE453621B (sv) 1988-02-15
IT1134896B (it) 1986-08-20
CH652863A5 (de) 1985-11-29
DK549780A (da) 1981-06-29
NL8007051A (nl) 1981-07-16
IE802604L (en) 1981-06-28
IL61780A0 (en) 1981-01-30
IT8026947A0 (it) 1980-12-24
CA1145057A (en) 1983-04-19
KR830004678A (ko) 1983-07-16
GB2066569B (en) 1983-09-14
ES498097A0 (es) 1981-12-16
BE886821A (fr) 1981-04-16
FR2473790B1 (xx) 1985-03-08
DD156039A5 (de) 1982-07-21
AU6544980A (en) 1981-07-02
HK69684A (en) 1984-09-14
IE50697B1 (en) 1986-06-25
AU534874B2 (en) 1984-02-16
IL61780A (en) 1983-07-31
FR2473790A1 (fr) 1981-07-17
JPS56103467A (en) 1981-08-18
GB2066569A (en) 1981-07-08
SG35184G (en) 1985-02-08
SE8008851L (sv) 1981-06-29
DE3048702A1 (de) 1981-09-10
PL228665A1 (xx) 1981-09-04
KR840002413B1 (ko) 1984-12-27

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