ES8201342A1 - Un sistema de memoria de un dispositivo acoplado en carga enserie-paralelo-serie - Google Patents

Un sistema de memoria de un dispositivo acoplado en carga enserie-paralelo-serie

Info

Publication number
ES8201342A1
ES8201342A1 ES496189A ES496189A ES8201342A1 ES 8201342 A1 ES8201342 A1 ES 8201342A1 ES 496189 A ES496189 A ES 496189A ES 496189 A ES496189 A ES 496189A ES 8201342 A1 ES8201342 A1 ES 8201342A1
Authority
ES
Spain
Prior art keywords
serial
fan
parallel
memory system
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES496189A
Other languages
English (en)
Other versions
ES496189A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES8201342A1 publication Critical patent/ES8201342A1/es
Publication of ES496189A0 publication Critical patent/ES496189A0/es
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)

Abstract

SISTEMA DE MEMORIA DEL TIPO QUE COMPRENDE UN REGISTRO EN SERIE DE ENTRADA, UN REGISTRO PRINCIPAL DE ALMACENAJE EN PARALELO Y OTRO REGISTRO EN SERIE DE SALIDA. LOS REGISTROS DE ENTRADA Y SALIDA (10, 12) TIENEN UNOS NODOS DE ALMACENAJE FORMADOS POR CAPAS DE POLISILICIO Y QUE RECIBEN IMPULSOS DE UNA SEÑAL DE RELOJ. LOS CIRCUITOS (D) DE DESPLIEGUE RECIBEN LA IMFORMACION DE LOS NODOS DE ENTRADA Y LA TRANSFIEREN A TRAVES DE LA MEMORIA PRINCIPAL (14) HACIA LOS CIRCUITOS DE DESPLIEGUE (E), LOS CUALES LA PASAN A LOS NODOS DE SALIDA. EL SISTEMA OFRECE VARIANTES DE REALIZACION.
ES496189A 1979-10-24 1980-10-23 Un sistema de memoria de un dispositivo acoplado en carga enserie-paralelo-serie Granted ES496189A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/087,843 US4288864A (en) 1979-10-24 1979-10-24 Serial-parallel-serial CCD memory system with fan out and fan in circuits

Publications (2)

Publication Number Publication Date
ES8201342A1 true ES8201342A1 (es) 1981-12-01
ES496189A0 ES496189A0 (es) 1981-12-01

Family

ID=22207579

Family Applications (1)

Application Number Title Priority Date Filing Date
ES496189A Granted ES496189A0 (es) 1979-10-24 1980-10-23 Un sistema de memoria de un dispositivo acoplado en carga enserie-paralelo-serie

Country Status (7)

Country Link
US (1) US4288864A (es)
EP (1) EP0028311A1 (es)
JP (1) JPS5668995A (es)
AU (1) AU6275080A (es)
BR (1) BR8006769A (es)
CA (1) CA1141467A (es)
ES (1) ES496189A0 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150190A (en) * 1981-02-27 1982-09-16 Hitachi Ltd Monolithic storage device
US4493060A (en) * 1981-03-09 1985-01-08 Fairchild Camera & Instrument Corp. Serial-parallel-serial charged coupled device memory and a method of transferring charge therein
EP0060198A3 (en) * 1981-03-09 1985-05-15 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Serial-parallel-serial charge coupled device and method of transferring charge therein
US5508967A (en) * 1993-08-09 1996-04-16 Matsushita Electric Industrial Co., Ltd. Line memory
KR100190373B1 (ko) * 1996-02-08 1999-06-01 김영환 리드 패스를 위한 고속 동기식 메모리 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3902186A (en) * 1970-10-28 1975-08-26 Gen Electric Surface charge transistor devices
US4177391A (en) * 1973-01-24 1979-12-04 Hitachi, Ltd. Charge transfer semiconductor device
US3889245A (en) * 1973-07-02 1975-06-10 Texas Instruments Inc Metal-insulator-semiconductor compatible charge transfer device memory system
US3913077A (en) * 1974-04-17 1975-10-14 Hughes Aircraft Co Serial-parallel-serial ccd memory with interlaced storage
US3967254A (en) * 1974-11-18 1976-06-29 Rca Corporation Charge transfer memory
US3944990A (en) * 1974-12-06 1976-03-16 Intel Corporation Semiconductor memory employing charge-coupled shift registers with multiplexed refresh amplifiers
US4024514A (en) * 1975-06-30 1977-05-17 Honeywell Information Systems, Inc. Multiphase series-parallel-series charge-coupled device registers with simplified input clocking
US4028671A (en) * 1975-10-06 1977-06-07 Motorola, Inc. Charge coupled storage device multiplexer
JPS5826115B2 (ja) * 1976-08-02 1983-05-31 株式会社東芝 Ｃｃｄシフトレジスタ
GB1506764A (en) * 1976-09-10 1978-04-12 Secr Defence Delay lines
US4117546A (en) * 1977-12-30 1978-09-26 International Business Machines Corporation Interlaced ccd memory
US4199691A (en) * 1978-06-16 1980-04-22 Rca Corporation CCD Multiple channel network
US4211936A (en) * 1978-06-16 1980-07-08 Rca Corporation CCD Gate electrode structures and systems employing the same
DE2842285C2 (de) * 1978-09-28 1980-09-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Ladungsverschiebespeicher in Seriell-Parallel-Seriell-Organisation

Also Published As

Publication number Publication date
EP0028311A1 (en) 1981-05-13
AU6275080A (en) 1981-04-30
BR8006769A (pt) 1981-04-28
CA1141467A (en) 1983-02-15
US4288864A (en) 1981-09-08
JPS5713956B2 (es) 1982-03-20
ES496189A0 (es) 1981-12-01
JPS5668995A (en) 1981-06-09

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