BR8006769A - Memoria de ccd serie-paraleloserie com circuitos de saida em leque e de entrada em leque - Google Patents

Memoria de ccd serie-paraleloserie com circuitos de saida em leque e de entrada em leque

Info

Publication number
BR8006769A
BR8006769A BR8006769A BR8006769A BR8006769A BR 8006769 A BR8006769 A BR 8006769A BR 8006769 A BR8006769 A BR 8006769A BR 8006769 A BR8006769 A BR 8006769A BR 8006769 A BR8006769 A BR 8006769A
Authority
BR
Brazil
Prior art keywords
fan
paraleloserie
ccd
series
memory
Prior art date
Application number
BR8006769A
Other languages
English (en)
Inventor
N Vogl Jr
T Harroun
L Heller
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BR8006769A publication Critical patent/BR8006769A/pt

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
BR8006769A 1979-10-24 1980-10-21 Memoria de ccd serie-paraleloserie com circuitos de saida em leque e de entrada em leque BR8006769A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/087,843 US4288864A (en) 1979-10-24 1979-10-24 Serial-parallel-serial CCD memory system with fan out and fan in circuits

Publications (1)

Publication Number Publication Date
BR8006769A true BR8006769A (pt) 1981-04-28

Family

ID=22207579

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8006769A BR8006769A (pt) 1979-10-24 1980-10-21 Memoria de ccd serie-paraleloserie com circuitos de saida em leque e de entrada em leque

Country Status (7)

Country Link
US (1) US4288864A (pt)
EP (1) EP0028311A1 (pt)
JP (1) JPS5668995A (pt)
AU (1) AU6275080A (pt)
BR (1) BR8006769A (pt)
CA (1) CA1141467A (pt)
ES (1) ES496189A0 (pt)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150190A (en) * 1981-02-27 1982-09-16 Hitachi Ltd Monolithic storage device
US4493060A (en) * 1981-03-09 1985-01-08 Fairchild Camera & Instrument Corp. Serial-parallel-serial charged coupled device memory and a method of transferring charge therein
EP0060198A3 (en) * 1981-03-09 1985-05-15 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Serial-parallel-serial charge coupled device and method of transferring charge therein
US5508967A (en) * 1993-08-09 1996-04-16 Matsushita Electric Industrial Co., Ltd. Line memory
KR100190373B1 (ko) * 1996-02-08 1999-06-01 김영환 리드 패스를 위한 고속 동기식 메모리 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3902186A (en) * 1970-10-28 1975-08-26 Gen Electric Surface charge transistor devices
US4177391A (en) * 1973-01-24 1979-12-04 Hitachi, Ltd. Charge transfer semiconductor device
US3889245A (en) * 1973-07-02 1975-06-10 Texas Instruments Inc Metal-insulator-semiconductor compatible charge transfer device memory system
US3913077A (en) * 1974-04-17 1975-10-14 Hughes Aircraft Co Serial-parallel-serial ccd memory with interlaced storage
US3967254A (en) * 1974-11-18 1976-06-29 Rca Corporation Charge transfer memory
US3944990A (en) * 1974-12-06 1976-03-16 Intel Corporation Semiconductor memory employing charge-coupled shift registers with multiplexed refresh amplifiers
US4024514A (en) * 1975-06-30 1977-05-17 Honeywell Information Systems, Inc. Multiphase series-parallel-series charge-coupled device registers with simplified input clocking
US4028671A (en) * 1975-10-06 1977-06-07 Motorola, Inc. Charge coupled storage device multiplexer
JPS5826115B2 (ja) * 1976-08-02 1983-05-31 株式会社東芝 Ｃｃｄシフトレジスタ
GB1506764A (en) * 1976-09-10 1978-04-12 Secr Defence Delay lines
US4117546A (en) * 1977-12-30 1978-09-26 International Business Machines Corporation Interlaced ccd memory
US4199691A (en) * 1978-06-16 1980-04-22 Rca Corporation CCD Multiple channel network
US4211936A (en) * 1978-06-16 1980-07-08 Rca Corporation CCD Gate electrode structures and systems employing the same
DE2842285C2 (de) * 1978-09-28 1980-09-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Ladungsverschiebespeicher in Seriell-Parallel-Seriell-Organisation

Also Published As

Publication number Publication date
ES8201342A1 (es) 1981-12-01
CA1141467A (en) 1983-02-15
EP0028311A1 (en) 1981-05-13
AU6275080A (en) 1981-04-30
JPS5668995A (en) 1981-06-09
US4288864A (en) 1981-09-08
ES496189A0 (es) 1981-12-01
JPS5713956B2 (pt) 1982-03-20

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