ES8104639A1 - Un dispositivo transistor mejorado - Google Patents

Un dispositivo transistor mejorado

Info

Publication number
ES8104639A1
ES8104639A1 ES494024A ES494024A ES8104639A1 ES 8104639 A1 ES8104639 A1 ES 8104639A1 ES 494024 A ES494024 A ES 494024A ES 494024 A ES494024 A ES 494024A ES 8104639 A1 ES8104639 A1 ES 8104639A1
Authority
ES
Spain
Prior art keywords
barrier
emitter
base
hot
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES494024A
Other languages
English (en)
Other versions
ES494024A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB7927647A external-priority patent/GB2056165A/en
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES494024A0 publication Critical patent/ES494024A0/es
Publication of ES8104639A1 publication Critical patent/ES8104639A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

DISPOSITIVO TRANSISTOR. COMPRENDE REGIONES SEMICONDUCTORAS (1 A 4). LA BASE (REGION 2) ESTA MUY IMPURIFICADA DE UN TIPO DE CONDUCTIVIDAD (TIPO N). UNOS MEDIOS FORMADORES DE BARRERA (1, 4, 5), FORMAN CON LA BASE (2) UNA BARRERA DE BASE A COLECTOR (1), IMPURIFICADA DE TIPO DE CONDUCTIVIDAD OPUESTA (TIPO P) Y BARRERA DE EMISOR A BASE, FORMADA POR UNA CAPA METALICA (5) (CONTACTO DE SCHOTTKY), EMISOR, Y UNA REGION DE BARRERA (4), CON CONCENTRACION DE IMPUREZAS OPUESTAS (TIPO P). LA REGION DE COLECTOR (3), ES DEL MISMO TIPO DE CONDUCTIVIDAD (TIPO N) QUE LA BASE, PERO CON MENOS IMPUREZAS. UNA TENSION DE POLARIZACION ENTRE LA BASE (2) Y EMISOR (5), VBE, ES NECESARIA PARA EMPOBRECER LA REGION (4). LA MAGNITUD DE VBE DEPENDE DEL ESPESOR DE LA REGION (4). H
ES494024A 1979-08-08 1980-08-06 Un dispositivo transistor mejorado Expired ES8104639A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB7927647A GB2056165A (en) 1979-08-08 1979-08-08 Hot-electron or hot-hole transistor
GB7943911A GB2056166B (en) 1979-08-08 1979-12-20 Hot-electron or hot-hole transistor

Publications (2)

Publication Number Publication Date
ES494024A0 ES494024A0 (es) 1981-04-16
ES8104639A1 true ES8104639A1 (es) 1981-04-16

Family

ID=26272474

Family Applications (1)

Application Number Title Priority Date Filing Date
ES494024A Expired ES8104639A1 (es) 1979-08-08 1980-08-06 Un dispositivo transistor mejorado

Country Status (10)

Country Link
US (1) US4862238A (es)
AU (1) AU536182B2 (es)
CA (1) CA1157961A (es)
DE (1) DE3027599A1 (es)
ES (1) ES8104639A1 (es)
FR (1) FR2463511A1 (es)
GB (1) GB2056166B (es)
IE (1) IE50185B1 (es)
IT (1) IT1132331B (es)
NL (1) NL186126C (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4449140A (en) * 1981-12-24 1984-05-15 National Research Development Corporation Semi-conductor barrier switching devices
GB2118363A (en) * 1982-04-08 1983-10-26 Philips Electronic Associated Hot-electron and hot-hole transistors
JPS61248561A (ja) * 1985-04-25 1986-11-05 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション 半導体構造体
GB2191037A (en) * 1986-05-23 1987-12-02 Philips Electronic Associated Hot charge-carrier transistors
GB2191035A (en) * 1986-05-23 1987-12-02 Philips Electronic Associated Hot charge-carrier transistors
NL8701497A (nl) * 1987-06-26 1989-01-16 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
GB8717361D0 (en) * 1987-07-22 1987-08-26 Gen Electric Co Plc Hot electron transistors
US5258624A (en) * 1988-05-27 1993-11-02 U.S. Philips Corp. Transferred electron effect device
US5204871A (en) * 1990-03-29 1993-04-20 Larkins Eric C Bistable optical laser based on a heterostructure pnpn thyristor
FR2678774B1 (fr) * 1991-07-05 1998-07-10 Thomson Csf Detecteur d'ondes electromagnetiques.
US5347142A (en) * 1993-06-25 1994-09-13 The United States Of America As Represented By The Secretary Of The Army Modes of infrared hot electron transistor operation in infrared detection
US20070215873A1 (en) * 2004-10-12 2007-09-20 Guy Silver Near natural breakdown device
US20090250696A1 (en) * 2006-06-04 2009-10-08 Guy Silver Near natural breakdown device
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
GB2485400B (en) * 2010-11-12 2014-12-10 Toshiba Res Europ Ltd Photon detector
US9048278B2 (en) * 2010-12-06 2015-06-02 Fuji Electric Co., Ltd. Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE622805A (es) * 1961-09-25
US3940783A (en) * 1974-02-11 1976-02-24 Signetics Corporation Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure
GB1573309A (en) * 1976-03-24 1980-08-20 Mullard Ltd Semiconductor devices and their manufacture
US4127861A (en) * 1977-09-26 1978-11-28 International Business Machines Corporation Metal base transistor with thin film amorphous semiconductors

Also Published As

Publication number Publication date
IE801633L (en) 1981-02-08
US4862238A (en) 1989-08-29
CA1157961A (en) 1983-11-29
DE3027599A1 (de) 1981-02-26
NL8004470A (nl) 1981-02-10
ES494024A0 (es) 1981-04-16
GB2056166B (en) 1983-09-14
AU536182B2 (en) 1984-04-19
IE50185B1 (en) 1986-03-05
NL186126C (nl) 1990-09-17
IT8024018A0 (it) 1980-08-05
IT1132331B (it) 1986-07-02
GB2056166A (en) 1981-03-11
FR2463511B1 (es) 1984-05-11
AU6107680A (en) 1981-02-12
DE3027599C2 (es) 1988-11-17
FR2463511A1 (fr) 1981-02-20

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Legal Events

Date Code Title Description
MM4A Patent lapsed

Effective date: 19960506