ES474771A1 - procedimiento de fabricacion de silicio policristalino - Google Patents
procedimiento de fabricacion de silicio policristalinoInfo
- Publication number
- ES474771A1 ES474771A1 ES474771A ES474771A ES474771A1 ES 474771 A1 ES474771 A1 ES 474771A1 ES 474771 A ES474771 A ES 474771A ES 474771 A ES474771 A ES 474771A ES 474771 A1 ES474771 A1 ES 474771A1
- Authority
- ES
- Spain
- Prior art keywords
- thin film
- polycrystalline silicon
- photovoltaic conversion
- silicon shaped
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 150000003377 silicon compounds Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
Procedimiento de fabricación de silicio policristalino, por reducción de un compuesto de silicio en estado gaseoso por un metal reductor, caracterizado porque el metal reductor se elige entre el grupo que comprende aluminio, galio e indio, estando dicho metal reductor en estaño líquido y eligiéndose las condiciones de trabajo de tal forma que el compuesto del metal reductor formado durante la reacción esté en estado gaseoso
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7733171A FR2407893A1 (fr) | 1977-11-04 | 1977-11-04 | Silicium polycristallin en couche mince pour conversion photovoltaique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES474771A1 true ES474771A1 (es) | 1979-03-16 |
Family
ID=9197257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES474771A Expired ES474771A1 (es) | 1977-11-04 | 1978-11-03 | procedimiento de fabricacion de silicio policristalino |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0001943A1 (es) |
| JP (1) | JPS5484825A (es) |
| AU (1) | AU4130078A (es) |
| BR (1) | BR7807220A (es) |
| ES (1) | ES474771A1 (es) |
| FR (1) | FR2407893A1 (es) |
| IT (1) | IT7851720A0 (es) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3824065A1 (de) * | 1988-07-15 | 1990-01-18 | Bayer Ag | Verfahren zur herstellung von solarsilicium |
| JP4911488B2 (ja) * | 2005-09-26 | 2012-04-04 | 国立大学法人 東京大学 | 多結晶シリコンの製造方法 |
| WO2007077957A1 (ja) * | 2005-12-27 | 2007-07-12 | Sumitomo Chemical Company, Limited | 多結晶シリコンの製造方法 |
-
1977
- 1977-11-04 FR FR7733171A patent/FR2407893A1/fr not_active Withdrawn
-
1978
- 1978-10-19 EP EP78400140A patent/EP0001943A1/fr not_active Withdrawn
- 1978-10-30 JP JP13273078A patent/JPS5484825A/ja active Pending
- 1978-10-31 IT IT7851720A patent/IT7851720A0/it unknown
- 1978-11-01 BR BR7807220A patent/BR7807220A/pt unknown
- 1978-11-02 AU AU41300/78A patent/AU4130078A/en active Pending
- 1978-11-03 ES ES474771A patent/ES474771A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT7851720A0 (it) | 1978-10-31 |
| AU4130078A (en) | 1979-05-17 |
| JPS5484825A (en) | 1979-07-06 |
| BR7807220A (pt) | 1979-06-12 |
| FR2407893A1 (fr) | 1979-06-01 |
| EP0001943A1 (fr) | 1979-05-16 |
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