ES468296A1 - Matriz de conmutacion de transmision de senal bilateral. - Google Patents

Matriz de conmutacion de transmision de senal bilateral.

Info

Publication number
ES468296A1
ES468296A1 ES468296A ES468296A ES468296A1 ES 468296 A1 ES468296 A1 ES 468296A1 ES 468296 A ES468296 A ES 468296A ES 468296 A ES468296 A ES 468296A ES 468296 A1 ES468296 A1 ES 468296A1
Authority
ES
Spain
Prior art keywords
transistor
drive
pnp
transmission
npn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES468296A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES468296A1 publication Critical patent/ES468296A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6221—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors combined with selecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1022—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
    • H03K17/665—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only
    • H03K17/666—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor
    • H03K17/668—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/68—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching ac currents or voltages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q3/00—Selecting arrangements
    • H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electronic Switches (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
ES468296A 1977-03-28 1978-03-28 Matriz de conmutacion de transmision de senal bilateral. Expired ES468296A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/781,790 US4125855A (en) 1977-03-28 1977-03-28 Integrated semiconductor crosspoint arrangement

Publications (1)

Publication Number Publication Date
ES468296A1 true ES468296A1 (es) 1978-11-16

Family

ID=25123949

Family Applications (1)

Application Number Title Priority Date Filing Date
ES468296A Expired ES468296A1 (es) 1977-03-28 1978-03-28 Matriz de conmutacion de transmision de senal bilateral.

Country Status (12)

Country Link
US (1) US4125855A (es)
JP (1) JPS53120390A (es)
BE (1) BE865243A (es)
CA (1) CA1095182A (es)
CH (1) CH626488A5 (es)
DE (1) DE2812784A1 (es)
ES (1) ES468296A1 (es)
FR (1) FR2386224A1 (es)
GB (1) GB1588695A (es)
IT (1) IT1093920B (es)
NL (1) NL7803206A (es)
SE (1) SE439409B (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2932587C2 (de) * 1979-08-10 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Breitbandkoppelanordnung mit einer Matrix von Koppelpunktschaltkreisen in ECL-Technik
JPS56148179A (en) * 1980-04-21 1981-11-17 Fujitsu Ltd Converting method of ac-dc
US4402008A (en) * 1981-08-27 1983-08-30 Bell Telephone Laboratories, Incorporated Wideband switching architecture
JPS58168255A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置
DE3435571A1 (de) * 1984-09-27 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte bipolare darlington-schaltung
JP7042719B2 (ja) * 2018-06-21 2022-03-28 日揮グローバル株式会社 硫酸ニッケル化合物の製造方法
CN109450434A (zh) * 2018-12-14 2019-03-08 东莞博力威电池有限公司 一种双通道模拟选择电路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2837704A (en) * 1954-12-02 1958-06-03 Junction transistors
US3024448A (en) * 1956-09-20 1962-03-06 Int Standard Electric Corp Static electric switches
US3564443A (en) * 1966-06-29 1971-02-16 Hitachi Ltd Semiconductor integrated circuit device containing lateral and planar transistor in a semiconductor layer
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
BE758719A (fr) * 1969-11-11 1971-05-10 Philips Nv Dispositif semiconducteur
US3697962A (en) * 1970-11-27 1972-10-10 Ibm Two device monolithic bipolar memory array
DE2123395C3 (de) * 1971-05-12 1983-03-10 TE KA DE Felten & Guilleaume Fernmeldeanlagen GmbH, 8500 Nürnberg Koppelpunkt einer elektronischen Koppelfeldeinrichtung mit Feldeffekttransistoren
FR2144595B1 (es) * 1971-07-07 1974-09-06 Radiotechnique Compelec
JPS4871892A (es) * 1971-12-27 1973-09-28
US3786425A (en) * 1972-12-18 1974-01-15 Bell Telephone Labor Inc Integrated circuit switching network providing crosspoint gain
US3913125A (en) * 1973-06-11 1975-10-14 Gte Laboratories Inc Negative impedance converter
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US3945857A (en) * 1974-07-01 1976-03-23 Fairchild Camera And Instrument Corporation Method for fabricating double-diffused, lateral transistors

Also Published As

Publication number Publication date
FR2386224A1 (fr) 1978-10-27
JPS53120390A (en) 1978-10-20
NL7803206A (nl) 1978-10-02
IT1093920B (it) 1985-07-26
DE2812784A1 (de) 1978-10-05
SE7803064L (sv) 1978-09-29
CA1095182A (en) 1981-02-03
FR2386224B1 (es) 1981-12-11
IT7821620A0 (it) 1978-03-24
GB1588695A (en) 1981-04-29
BE865243A (fr) 1978-07-17
CH626488A5 (es) 1981-11-13
US4125855A (en) 1978-11-14
JPS6337507B2 (es) 1988-07-26
SE439409B (sv) 1985-06-10
DE2812784C2 (es) 1987-08-06

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